IRFD113, SiHFD113
www.vishay.com
Vishay Siliconix
S11-2479-Rev. A, 19-Dec-11
1
Document Number: 91487
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Power MOSFET
FEATURES
• For Automatic Insertion
• Compact Plastic Package
•End Stackable
• Fast Switching
• Low Drive Current
• Easily Paralleled
• Excellent Temperature Stability
• Compliant to RoHS Directive 2002/95/EC
Note
* Pb containing terminations are not RoHS compliant, exemptions
may apply
DESCRIPTION
The HVMDIP technology is the key to Vishay’s advanced
line of power MOSFET transistors. The efficient geometry
and unique processing of the HVMDIP design achieves
very low on-state resistance combined with high
transconductance and extreme device ruggedness.
HVMDIPs feature all of the established advantages of
MOSFETs such as voltage control, very fast switching, ease
of paralleling, and temperature stability of the electrical
parameters.
The HVMDIP 4 pin, dual-in-line package brings the
advantages of HVMDIPs to high volume applications where
automatic PC board insertion is desireable, such as circuit
boards for computers, printers, telecommunications
equipment, and consumer products. Their compatibility with
automatic insertion equipment, low-profile and end
stackable features represent the stat-of-the-art in power
device packaging.
Notes
a. T
J
= 25 °C to 150 °C
b. Repetitive rating; pulse width limited by maximum junction temperature.
c. 1.6 mm from case.
PRODUCT SUMMARY
V
DS
(V) 60
R
DS(on)
(Ω)V
GS
= 10 V 0.8
Q
g
(Max.) (nC) 7
Q
gs
(nC) 2
Q
gd
(nC) 7
Configuration Single
N-Channel MOSFET
G
D
S
ORDERING INFORMATION
Package HVMDIP
Lead (Pb)-free
IRFD113PbF
SiHFD113-E3
ABSOLUTE MAXIMUM RATINGS (T
C
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage
a
V
DS
60
V
Gate-Source Voltage V
GS
± 20
Continuous Drain Current V
GS
at 10 V T
C
= 25 °C I
D
0.8
A
Pulsed Drain Current
b
I
DM
6.4
Linear Derating Factor 0.008 W/°C
Inductive Current, Clamped L = 100 μH I
LM
6.4 A
Maximum Power Dissipation T
C
= 25 °C P
D
1.0 W
Operating Junction and Storage Temperature Range T
J
, T
stg
- 55 to + 150
°C
Soldering Recommendations (Peak Temperature) for 10 s 300
c
