OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

BC307BZL1G

P1-P3P4-P4
© Semiconductor Components Industries, LLC, 2005
September, 2005 − Rev. 3
1 Publication Order Number:
BC307/D
BC307B, BC307C
Amplifier Transistors
PNP Silicon
Features
• Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector − Emitter Voltage V
CEO
−45 Vdc
Collector − Base Voltage V
CBO
−50 Vdc
Emitter − Base Voltage V
EBO
−5.0 Vdc
Collector Current − Continuous I
C
−100 mAdc
Total Device Dissipation
@ T
A
= 25°C
Derate above 25°C
P
D
350
2.8
mW
mW/°C
Total Device Dissipation
@ T
C
= 25°C
Derate above 25°C
P
D
1.0
8.0
W
mW/°C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
−55 to +150 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance,
Junction−to−Ambient
R
q
JA
357 °C/W
Thermal Resistance,
Junction−to−Case
R
q
JC
125 °C/W
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Device Package Shipping
†
ORDERING INFORMATION
BC307B TO−92 5000 Units / Box
BC307BRL1 TO−92 2000 / Tape & Ree
l
COLLECTOR
1
2
BASE
3
EMITTER
BC307BZL1 TO−92 2000 / Ammo Box
BC307C TO−92 5000 Units / Box
http://onsemi.com
3
2
1
TO−92
CASE 29
STYLE 17
MARKING
DIAGRAM
BC30
7x
AYWW G
G
BC307x = Device Code
x = B or C
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
BC307BG TO−92
(Pb−Free)
5000 Units / Box
BC307BRL1G TO−92
(Pb−Free)
2000 / Tape & Ree
l
BC307BZL1G TO−92
(Pb−Free)
2000 / Ammo Box
BC307CG TO−92
(Pb−Free)
5000 Units / Box
†
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
BC307B, BC307C
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
(I
C
= −2.0 mAdc, I
B
= 0)
V
(BR)CEO
−45 − −
Vdc
Emitter−Base Breakdown Voltage
(I
E
= −100 mAdc, I
C
= 0)
V
(BR)EBO
−5.0 − −
Vdc
Collector−Emitter Leakage Current
(V
CES
= −50 V, V
BE
= 0)
(V
CES
= −50 V, V
BE
= 0) T
A
= 125°C
I
CES
−
−
−0.2
−0.2
−15
−4.0
nAdc
mA
ON CHARACTERISTICS
DC Current Gain
(I
C
= −10 mAdc, V
CE
= −5.0 Vdc) BC307B
BC307C
(I
C
= −2.0 mAdc, V
CE
= −5.0 Vdc) BC307
BC307B
BC307C
(I
C
= −100 mAdc, V
CE
= −5.0 Vdc) BC307B
BC307C
h
FE
−
−
120
200
420
−
−
150
270
−
290
500
180
300
−
−
800
460
800
−
−
−
Collector−Emitter Saturation Voltage
(I
C
= −10 mAdc, I
B
= −0.5 mAdc)
(I
C
= −10 mAdc, I
B
= see Note 1)
(I
C
= −100 mAdc, I
B
= −5.0 mAdc)
V
CE(sat)
−
−
−
−0.10
−0.30
−0.25
−0.3
−0.6
−
Vdc
Base−Emitter Saturation Voltage
(I
C
= −10 mAdc, I
B
= −0.5 mAdc)
(I
C
= −100 mAdc, I
B
= −5.0 mAdc)
V
BE(sat)
−
−
−0.7
−1.0
−
−
Vdc
Base−Emitter On Voltage
(I
C
= −2.0 mAdc, V
CE
= −5.0 Vdc)
V
BE(on)
−0.55 −0.62 −0.7 Vdc
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product
(I
C
= −10 mAdc, V
CE
= −5.0 Vdc, f = 100 MHz)
f
T
− 280 −
MHz
Common Base Capacitance
(V
CB
= −10 Vdc, I
C
= 0, f = 1.0 MHz)
C
cbo
− − 6.0 pF
Noise Figure
(I
C
= −0.2 mAdc, V
CE
= −5.0 Vdc, R
S
= 2.0 kW,
f = 1.0 kHz)
NF
− 2.0 10
dB
1. I
C
= −10 mAdc on the constant base current characteristic, which yields the point I
C
= −11 mAdc, V
CE
= −1.0 V.
BC307B, BC307C
http://onsemi.com
3
TYPICAL CHARACTERISTICS
2.0
1.5
1.0
0.2
0.3
0.5
0.7
−200−0.2 −0.5 −1.0 −2.0 −5.0 −10 −20 −50 −100
I
C
, COLLECTOR CURRENT (mAdc)
Figure 1. Normalized DC Current Gain
h
FE
, NORMALIZED DC CURRENT GAIN
V
CE
= −10 V
T
A
= 25°C
−1.0
−0.9
−0.8
−0.7
−0.6
−0.5
−0.4
−0.3
−0.2
−0.1
0
−0.1
I
C
, COLLECTOR CURRENT (mAdc)
Figure 2. “Saturation” and “On” Voltages
V, VOLTAGE (VOLTS)
T
A
= 25°C
V
BE(sat)
@ I
C
/I
B
= 10
V
BE(on)
@ V
CE
= −10 V
V
CE(sat)
@ I
C
/I
B
= 10
400
20
30
40
60
80
100
200
300
I
C
, COLLECTOR CURRENT (mAdc)
Figure 3. Current−Gain — Bandwidth Product
f
T
, CURRENT−GAIN  BANDWIDTH PRODUCT (MHz)
C, CAPACITANCE (pF)
10
1.0
2.0
3.0
5.0
7.0
−0.4
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 4. Capacitances
T
A
= 25°C
C
ib
C
ob
r
b
, BASE SPREADING RESISTANCE (OHMS)
150
140
130
120
110
100
I
C
, COLLECTOR CURRENT (mAdc)
Figure 5. Output Admittance
−0.2 −0.5 −1.0 −2.0 −5.0 −10 −20 −50 −100
V
CE
= −10 V
T
A
= 25°C
−0.5 −1.0 −2.0 −3.0 −5.0 −10 −20 −30 −50 −0.6 −1.0 −2.0 −4.0 −6.0 −10 −20 −30 −40
1.0
I
C
, COLLECTOR CURRENT (mAdc)
Figure 6. Base Spreading Resistance
V
CE
= −10 V
f = 1.0 kHz
T
A
= 25°C
′
−0.1 −0.2 −0.3 −0.5 −1.0 −2.0 −3.0 −5.0 −10
V
CE
= −10 V
f = 1.0 kHz
T
A
= 25°C
−0.1 −0.2 −0.5 −1.0 −2.0 −5.0 −10
0.01
0.03
0.05
0.1
0.3
0.5
h , OUTPUT ADMITTANCE (OHMS)
ob
150
P1-P3P4-P4

BC307BZL1G

Mfr. #:
Buy BC307BZL1G
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - BJT 100mA 50V PNP
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet