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NSBA143ZF3T5G

P1-P3P4-P6P7-P9P10-P12
MUN2133, MMUN2133L, MUN5133, DTA143ZE, DTA143ZM3, NSBA143ZF3
www.onsemi.com
4
Table 2. THERMAL CHARACTERISTICS
Characteristic UnitMaxSymbol
Thermal Characteristics (SOT−1123) (NSBA143ZF3)
Total Device Dissipation
T
A
= 25°C (Note 3)
(Note 4)
Derate above 25°C (Note 3)
(Note 4)
P
D
254
297
2.0
2.4
mW
mW/°C
Thermal Resistance, (Note 3)
Junction to Ambient (Note 4)
R
q
JA
493
421
°C/W
Thermal Resistance, Junction to Lead (Note 3)
R
q
JL
193 °C/W
Junction and Storage Temperature Range T
J
, T
stg
−55 to +150 °C
1. FR−4 @ Minimum Pad.
2. FR−4 @ 1.0 x 1.0 Inch Pad.
3. FR*4 @ 100 mm
2
, 1 oz. copper traces, still air.
4. FR*4 @ 500 mm
2
, 1 oz. copper traces, still air.
Table 3. ELECTRICAL CHARACTERISTICS (T
A
= 25°C, unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector−Base Cutoff Current
(V
CB
= 50 V, I
E
= 0)
I
CBO
− − 100
nAdc
Collector−Emitter Cutoff Current
(V
CE
= 50 V, I
B
= 0)
I
CEO
− − 500
nAdc
Emitter−Base Cutoff Current
(V
EB
= 6.0 V, I
C
= 0)
I
EBO
− − 0.18
mAdc
Collector−Base Breakdown Voltage
(I
C
= 10 mA, I
E
= 0)
V
(BR)CBO
50 − −
Vdc
Collector−Emitter Breakdown Voltage (Note 5)
(I
C
= 2.0 mA, I
B
= 0)
V
(BR)CEO
50 − −
Vdc
ON CHARACTERISTICS
DC Current Gain (Note 5)
(I
C
= 5.0 mA, V
CE
= 10 V)
h
FE
80 140 −
Collector *Emitter Saturation Voltage (Note 5)
(I
C
= 10 mA, I
B
= 0.3 mA)
VCE(sat)
− − 0.25
Vdc
Input Voltage (off)
(V
CE
= 5.0 V, I
C
= 100 mA)
V
i(off)
− 0.7 0.5
Vdc
Input Voltage (on)
(V
CE
= 0.3 V, I
C
= 5.0 mA)
V
i(on)
1.3 0.9 −
Vdc
Output Voltage (on)
(V
CC
= 5.0 V, V
B
= 2.5 V, R
L
= 1.0 kW)
V
OL
− − 0.2
Vdc
Output Voltage (off)
(V
CC
= 5.0 V, V
B
= 0.5 V, R
L
= 1.0 kW)
V
OH
4.9 − −
Vdc
Input Resistor R1 3.3 4.7 6.1
kW
Resistor Ratio R
1
/R
2
0.08 0.1 0.14
5. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle v 2%.
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
MUN2133, MMUN2133L, MUN5133, DTA143ZE, DTA143ZM3, NSBA143ZF3
www.onsemi.com
5
TYPICAL CHARACTERISTICS
MUN2133, MMUN2133L, MUN5133, DTA143ZE, DTA143ZM3
f = 10 kHz
I
E
= 0 A
T
A
= 25°C
10
010 20304050
9
8
7
6
5
4
3
2
1
0
150°C
25°C
−55°C
Figure 2. V
CE(sat)
vs. I
C
Figure 3. DC Current Gain
Figure 4. Output Capacitance Figure 5. Output Current vs. Input Voltage
V
in
, INPUT VOLTAGE (V)V
R
, REVERSE BIAS VOLTAGE (V)
Figure 6. Input Voltage vs. Output Current
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA) I
C
, COLLECTOR CURRENT (mA)
V
CE(sat)
, COLLECTOR−EMITTER VOLTAGE (V)
h
FE
, DC CURRENT GAIN
C
ob
, CAPACITANCE (pF)
I
C
, COLLECTOR CURRENT (mA)
V
in
, INPUT VOLTAGE (V)
I
C
/I
B
= 10
V
CE
= 10 V
V
O
= 5 V
V
O
= 0.2 V
1
0.1
0.01
1 10 100
150°C
25°C
−55°C
1000
1 10 1000.1
100
10
1
150°C
25°C
−55°C
100
10
1
0.1
0.01
0.001
0 0.5 1 3 3.5 41.5 2 2.5
100
04050
10
1
0.1
302010
150°C
25°C
−55°C
MUN2133, MMUN2133L, MUN5133, DTA143ZE, DTA143ZM3, NSBA143ZF3
www.onsemi.com
6
TYPICAL CHARACTERISTICS
NSBA143ZF3
−55°C
150°C
Figure 7. V
CE(sat)
vs. I
C
Figure 8. DC Current Gain
Figure 9. Output Capacitance Figure 10. Output Current vs. Input Voltage
V
in
, INPUT VOLTAGE (V)V
R
, REVERSE BIAS VOLTAGE (V)
Figure 11. Input Voltage vs. Output Current
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA) I
C
, COLLECTOR CURRENT (mA)
V
CE(sat)
, COLLECTOR−EMITTER
VOLTAGE (V)
h
FE
, DC CURRENT GAIN
50403020100
C
ob
, CAPACITANCE (pF)
I
C
, COLLECTOR CURRENT (mA)
V
in
, INPUT VOLTAGE (V)
V
O
= 5 V
V
O
= 0.2 V
I
C
/I
B
= 10
V
CE
= 10 V
25°C
1
0.1
0.01
110 50
1000
1 10 100
−55°C
150°C
25°C
7
25°C
−55°C
150°C
01 423
100
10
1
0.1
0.01
0.001
25°C
−55°C
150°C
100
50403020100
403020
100
10
1
0.1
10
1
0.1
f = 10 kHz
I
E
= 0 A
T
A
= 25°C
6
5
4
3
2
1
0
5
P1-P3P4-P6P7-P9P10-P12

NSBA143ZF3T5G

Mfr. #:
Buy NSBA143ZF3T5G
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - Pre-Biased SOT-1123 PBRT TRANSISTOR
Lifecycle:
New from this manufacturer.
Delivery:
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