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MBRD835LT4G

P1-P3P4-P5
© Semiconductor Components Industries, LLC, 2012
April, 2017 − Rev. 12
1 Publication Order Number:
MBRD835L/D
MBRD835L, SBRD8835L
Switch-mode
Power Rectifier
DPAK Surface Mount Package
This switch−mode power rectifier which uses the Schottky Barrier
principle with a proprietary barrier metal, is designed for use as output
rectifiers, free wheeling, protection and steering diodes in switching
power supplies, inverters and other inductive switching circuits.
Features
• Low Forward Voltage
• 150°C Operating Junction Temperature
• Epoxy Meets UL 94 V−0 @ 0.125 in
• Compact Size
• Lead Formed for Surface Mount
• SBRD8 Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
Mechanical Characteristics
• Case: Epoxy, Molded
• Weight: 0.4 Gram (Approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
• Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
• Shipped 75 Units Per Plastic Tube
• ESD Rating:
♦ Machine Model = C (> 400 V)
♦ Human Body Model = 3B (> 8000 V)
Device Package Shipping
†
ORDERING INFORMATION
SCHOTTKY BARRIER
RECTIFIER
8.0 AMPERES, 35 VOLTS
4
1
3
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
MBRD835LT4G DPAK
(Pb−Free)
2,500 /
Tape & Reel
DPAK
CASE 369C
MARKING DIAGRAM
B835LG = Specific Device Number
Y = Year
WW = Work Week
G = Pb−Free Device
YWW
B
835LG
MBRD835LG DPAK
(Pb−Free)
75 Units / Rail
www.onsemi.com
SBRD8835LG DPAK
(Pb−Free)
75 Units / Rail
SBRD835LT4G−VF01 DPAK
(Pb−Free)
2,500 /
Tape & Reel
SBRD8835LG−VF01 DPAK
(Pb−Free)
75 Units / Rail
SBRD8835LT4G−VF01 DPAK
(Pb−Free)
2,500 /
Tape & Reel
SBRD8835LT4G DPAK
(Pb−Free)
2,500 /
Tape & Reel
MBRD835L, SBRD8835L
www.onsemi.com
2
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
35 V
Average Rectified Forward Current
(At Rated V
R
, T
C
= 88°C)
I
F(AV)
8.0
A
Peak Repetitive Forward Current
(At Rated V
R
, Square Wave, 20 kHz, T
C
= 80°C)
I
FRM
16
A
Non−Repetitive Peak Surge Current
(Surge applied at rated load conditions, halfwave, single phase, 60 Hz)
I
FSM
75
A
Repetitive Avalanche Current
(Current Decaying Linearly to Zero in 1 s, Frequency Limited by T
Jmax
)
I
AR
2.0
A
Storage / Operating Case Temperature T
stg
−65 to +150 °C
Operating Junction Temperature (Note 1) T
J
−65 to +150 °C
Voltage Rate of Change (Rated V
R
) dv/dt 10,000
V/s
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dP
D
/dT
J
< 1/R
JA
.
THERMAL CHARACTERISTICS
Characteristic Symbol Value Unit
Thermal Resistance − Junction−to−Case
R
JC
2.8 °C/W
Thermal Resistance − Junction−to−Ambient (Note 2)
R
JA
80 °C/W
2. Rating applies when surface mounted on the minimum pad size recommended.
ELECTRICAL CHARACTERISTICS
Characteristic Symbol Value Unit
Maximum Instantaneous Forward Voltage (Note 3)
(i
F
= 8 Amps, T
C
= +25°C)
(i
F
= 8 Amps, T
C
= +125°C)
V
F
0.51
0.41
V
Maximum Instantaneous Reverse Current (Note 3)
(Rated dc Voltage, T
C
= +25°C)
(Rated dc Voltage, T
C
= +100°C)
I
R
1.4
35
mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width = 300 s, Duty Cycle ≤ 2%.
MBRD835L, SBRD8835L
www.onsemi.com
3
TYPICAL CHARACTERISTICS
10
1
0.1
0 0.6
v
F
, INSTANTANEOUS VOLTAGE (VOLTS)
Figure 1. Maximum Forward Voltage Figure 2. Typical Forward Voltage
i
F
, INSTANTANEOUS FORWARD CURRENT (mA)
0.01
0.1 0.2 0.3 0.4 0.5
T
J
= 125°C
25°C
10
1
0.1
0 0.6
V
F
, INSTANTANEOUS VOLTAGE (VOLTS)
0.01
0.1 0.2 0.3 0.4 0.5
75°C
I
F
, INSTANTANEOUS FORWARD CURRENT (AMPS)
25°C
T
J
= 125°C
10
1
0.1
035
V
F
, REVERSE VOLTAGE (VOLTS)
Figure 3. Maximum Reverse Current Figure 4. Typical Reverse Current
0.001
5101520
T
J
= 125°C
25°C
10
1
0.1
0
V
R
, REVERSE VOLTAGE (VOLTS)
0.01
5101520
T
J
= 125°C
75°C
25°C
I
R
, REVERSE CURRENT (mA)
I
R
, REVERSE CURRENT (mA)
0.01
100
1000
100
100°C
100°C
25 30 25 30 35
P1-P3P4-P5

MBRD835LT4G

Mfr. #:
Buy MBRD835LT4G
Manufacturer:
ON Semiconductor
Description:
Schottky Diodes & Rectifiers 8A 35V Low Vf
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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