TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http://www.microsemi.com
HIGH RELIABILITY SILICON POWER RECTIFIER
Qualified per MIL-PRF-19500/211
• Glass Passivated Die • Glass to Metal Header Construction
• Rugged Construction • High Surge Current Capability
T4-LDS-0140 Rev. 1 (091750) Page 1 of 3
DEVICES LEVELS
1N3164 1N3172 1N3164R 1N3172R JAN
1N3168 1N3174 1N3168R 1N3174R JANTX
1N3170 1N3170R JANTXV
ABSOLUTE MAXIMUM RATINGS (T
C
= +25°C unless otherwise noted)
Parameters / Test Conditions Symbol Value Unit
Peak Repetitive Reverse Voltage
1N3164
1N3168
1N3170
1N3172
1N3174
1N3164R
1N3168R
1N3170R
1N3172R
1N3174R
V
RWM
200
400
600
800
1000
V
Average Forward Current, T
C
= 150° I
F
200 A
Average Forward Current, T
C
= 120° I
F
300 A
Peak Surge Forward Current @ t
p
= 8.3ms, half sinewave,
T
C
= 200°C
I
FSM
6250 A
Thermal Resistance, Junction to Case
R
θJC
0.20 °C/W
Typical Thermal Resistance
R
θCS
0.80 °C/W
Operating Case Temperature Range T
j
-65°C to 200°C °C
Storage Temperature Range T
STG
-65°C to 200°C °C
ELECTRICAL CHARACTERISTICS (T
A
= +25°C, unless otherwise noted)
Parameters / Test Conditions Symbol Min. Max. Unit
Forward Voltage
I
FM
= 940A, T
C
= 25°C
V
FM
1.55 V
Reverse Current
V
RM
= 200, T
C
= 25°C
V
RM
= 400, T
C
= 25°C
V
RM
= 600, T
C
= 25°C
V
RM
= 800, T
C
= 25°C
V
RM
= 1000, T
C
= 25°C
1N3164
1N3168
1N3170
1N3172
1N3174
1N3164R
1N3168R
1N3170R
1N3172R
1N3174R
I
RM
10 mA
Reverse Current
V
RM
= 200, T
C
= 175°C
V
RM
= 400, T
C
= 175°C
V
RM
= 600, T
C
= 175°C
V
RM
= 800, T
C
= 175°C
V
RM
= 1000, T
C
= 175°C
1N3164
1N3168
1N3170
1N3172
1N3174
1N3164R
1N3168R
1N3170R
1N3172R
1N3174R
I
RM
30 mA
Note:
DO-205AB (DO-9)
