MAX1840EUB

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General Description
The MAX1840/MAX1841 subscriber identity module
(SIM)/smart card level translators provide level shifting
and electrostatic discharge (ESD) protection for SIM and
smart card ports. These devices integrate two unidirec-
tional level shifters for the reset and clock signals, a bidi-
rectional level shifter for the serial data stream, and
±10kV ESD protection on all card contacts.
The MAX1840 includes a SHDN control input to aid
insertion and removal of SIM and smart cards, while the
MAX1841 includes a system-side data driver to support
system controllers without open-drain outputs. The logic
supply voltage range is +1.4V to +5.5V for the “controller
side” and +1.7V to +5.5V for the “card side.” Total sup-
ply current is 1.0µA. Both devices automatically shut
down when either power supply is removed. For a com-
plete SIM card interface, combine the MAX1840/
MAX1841 with the MAX1686H 0V/3V/5V regulated
charge pump.
The MAX1840/MAX1841 are available in ultra-small
10-pin µMAX packages that are only 1.09mm high and
half the area of an 8-pin SO.
The MAX1840/MAX1841 are compliant with GSM test
specifications 11.11 and 11.12.
Applications
SIM Interface in GSM Cellular Telephones
Smart Card Readers
Logic Level Translation
SPI™/QSPI™/MICROWIRE™ Level Translation
Features
SIM/Smart Card Level Shifting
+1.4V to +5.5V Controller Voltage Range
+1.7V to +5.5V Card Voltage Range
±10kV ESD Card Socket Protection
Allows Level Translation with DV
CC
V
CC
or
DV
CC
V
CC
Automatically Shuts Down When Either Supply Is
Removed
Card Contacts Actively Pulled Low During
Shutdown
1µA Total Quiescent Supply Current
0.01µA Total Shutdown Supply Current
Ultra-Small 10-Pin µMAX Package
Compliant with GSM Test Specifications 11.11
and 11.12
MAX1840/MAX1841
Low-Voltage SIM/Smart Card
Level Translators in µMAX
________________________________________________________________ Maxim Integrated Products 1
IO1DATA
2
3
4
5
9
8
7
6
V
CC
CLK
RST
GNDSHDN (DDRV)
( ) ARE FOR MAX1841.
RIN
CIN
DV
CC
10
MAX1840
MAX1841
µMAX
TOP VIEW
V
CC
SIM OR
SMART
CARD
SYSTEM
CONTROLLER
CLK
IO
GND GND
IO
CLK
GND
V
CC
DV
CC
DV
CC
MAX1840
MAX1841
SHDN*
OPTIONAL
RIN
CIN
RSTRST
OPTIONAL
DATA
DDRV*
SHDN FOR MAX1840 ONLY;
DDRV FOR MAX1841 ONLY.
*
DV
CC
V
CC
Typical Operating Circuit
19-1716; Rev 0; 4/00
PART
MAX1840EUB
MAX1841EUB
-40°C to +85°C
-40°C to +85°C
TEMP. RANGE PIN-PACKAGE
10 µMAX
10 µMAX
Pin Configuration
Ordering Information
SPI and QSPI are trademarks of Motorola, Inc.
MICROWIRE is a trademark of National Semiconductor Corp.
MAX1840/MAX1841
Low-Voltage SIM/Smart Card
Level Translators in µMAX
2 _______________________________________________________________________________________
ABSOLUTE MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
(Figure 1, DV
CC
= +1.8V; V
CC
= +1.8V, +3.0V, or +5.0V; SHDN = DV
CC
, CIN = RIN = GND or DV
CC
, IO = V
CC
, DATA = DDRV = DV
CC
,
C
IO
= C
CLK
= C
RST
= C
DATA
= 30pF, T
A
= -40°C to +85°C, unless otherwise noted. Typical values are at T
A
= +25°C.) (Note1)
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
DV
CC
, V
CC
to GND................................................-0.3V to +6.0V
RIN, CIN, DATA, DDRV,
SHDN to GND ......................................-0.3V to (DV
CC
+ 0.3V)
RST, CLK, IO to GND .................................-0.3V to (V
CC
+ 0.3V)
Continuous Power Dissipation (T
A
= +70°C)
10-Pin µMAX (derate 5.6mW/°C above +70°C) ...........444mW
Operating Temperature Range ...........................-40°C to +85°C
Storage Temperature Range .............................-65°C to +150°C
Junction Temperature......................................................+150°C
Lead Temperature (soldering, 10s) .................................+300°C
UNITS
DV
CC
Operating Range DV
CC
1.4 5.5
V
V
CC
Operating Range V
CC
1.7 5.5
V
DV
CC
Operating Current I
DVCC
CIN static
0.1 0.5
µA
CIN clocked at 1.625MHz from GND to DV
CC
with 50% duty cycle
CONDITIONS
2.5
CIN clocked at 3.25MHz from GND to DV
CC
with 50% duty cycle
5
V
CC
Operating Current I
VCC
CIN static
0.9 3.0
mA
CIN clocked at 1.625MHz from GND to DV
CC
with 50% duty cycle
0.4
CIN clocked at 3.25MHz from GND to DV
CC
with 50% duty cycle
0.8
Total Shutdown Current I
SHDN
I
OFF
= I
VCC
+ I
DVCC
, SHDN = GND
(MAX1840 only), or DV
CC
= GND
or V
CC
= GND
0.01 1
µA
Digital Input Low Threshold V
IL
0.2
DV
CC
V
Digital Input High Threshold V
IH
0.7
DV
CC
V
Input Leakage Current
0.01 1
µA
Digital Output Low Level V
OL
I
SINK
= 200µA
0.4
V
Digital Output High Level V
OH
I
SOURCE
= 20µA
0.9
V
CC
V
I
SOURCE
= 200µA
0.8 VCC
DATA Pullup Resistance R
DATA
Between DATA and DV
CC
13 20 28
k
Input Low Threshold V
IL(DATA)
(Note 2)
0.3
V
Input High Threshold V
IH(DATA)
(Note 3)
DV
CC
- 0.6
V
Input Low Current I
IL
V
CC
= 5.0V
1
mA
MIN TYP MAXSYMBOLPARAMETER
Input High Current I
IH
2
µA
POWER SUPPLIES
CIN, RIN, SHDN, DDRV LOGIC INPUTS
CLK, RST OUTPUTS
DATA INPUT/OUTPUT
µA
MAX1840/MAX1841
Low-Voltage SIM/Smart Card
Level Translators in µMAX
_______________________________________________________________________________________ 3
ELECTRICAL CHARACTERISTICS (continued)
(Figure 1, DV
CC
= +1.8V; V
CC
= +1.8V, +3.0V, or +5.0V; SHDN = DV
CC
, CIN = RIN = GND or DV
CC
, IO = V
CC
, DATA = DDRV = DV
CC
,
C
IO
= C
CLK
= C
RST
= C
DATA
= 30pF, T
A
= -40°C to +85°C, unless otherwise noted. Typical values are at T
A
= +25°C.) (Note1)
UNITSCONDITIONS MIN TYP MAXSYMBOLPARAMETER
Output Low Level V
OL(DATA)
IO = GND, I
SINK
= 100µA
0.4
V
DV
CC
= 3.0V, IO = GND, I
SINK
= 200µA
0.4
Output High Level
I
SOURCE
= 10µA
0.7
DV
CC
V
DV
CC
= 3.0V, I
SOURCE
= 20µA
0.7
DV
CC
V
OH(DATA)
IO Pullup Resistance R
IO
Between IO and V
CC
6.5 10 14
k
Input Low Threshold V
IL(IO)
I
IL(MAX)
= 1mA (Note 2)
0.3
V
Input High Threshold V
IH(IO)
I
IH(MAX)
= ±20µA (Note 3)
0.7
V
CC
V
Input Low Current I
IL
1
mA
Input High Current I
IH
20
µA
Output Low Level V
OL(IO)
DATA = GND or DDRV = GND,
I
SINK
= 200µA
0.4
V
Output High Level V
OH(IO)
I
SOURCE
= 20µA
0.8
V
CC
V
Shutdown Output Levels
(IO, CLK, RST)
I
SINK
= 200µA, SHDN = GND, DATA = CIN =
RIN = DV
CC
(MAX1840 only)
0.4
V
I
SINK
= 200µA, DV
CC
= GND, SHDN
(MAX1840) = DDRV (MAX1841) = DATA =
CIN = RIN = DV
CC
0.4
V
I
SINK
= 200µA, V
CC
= GND, SHDN
(MAX1840) = DDRV (MAX1841) = DATA =
CIN = RIN = DV
CC
0.4
V
Maximum CLK Frequency
(Notes 4, 5)
f
CLK
V
CC
= 2.7V to 5.5V, DV
CC
= 1.4V to 2.7V
520
MHz
V
CC
= 1.7V to 3.6V, DV
CC
= 1.4V to 2.25V
515
IO (INPUT/OUTPUT)
SHUTDOWN OUTPUT LEVELS
TIMING
Note 1: Specifications to -40°C are guaranteed by design, not production tested.
Note 2: V
IL
is defined as the voltage at which the output (DATA/IO) voltage equals 0.5V.
Note 3: V
IH
is defined as the voltage at which the output (DATA/IO) voltage exceeds the input (IO/DATA) voltage by 100mV.
Note 4: Timing specifications are guaranteed by design, not production tested.
Note 5: The maximum CLK frequency is defined as the output duty cycle remaining in the 40% to 60% range when the 50% CIN is
applied. CIN has 5ns rise and fall times; levels are GND to DV
CC
. Input and output levels are measured at 50% of the waveform.

MAX1840EUB

Mfr. #:
Manufacturer:
Maxim Integrated
Description:
Translation - Voltage Levels SIM/Smart-Card Level Translator
Lifecycle:
New from this manufacturer.
Delivery:
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