ZXMC4A16DN8
SEMICONDUCTORS
ISSUE 1 - NOVEMBER 2004
4
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS
STATIC
Drain-Source Breakdown Voltage V
(BR)DSS
40 V I
D
= 250A, V
GS
=0V
Zero Gate Voltage Drain Current I
DSS
0.5 AV
DS
=40V, V
GS
=0V
Gate-Body Leakage I
GSS
100 nA V
GS
=±20V, V
DS
=0V
Gate-Source Threshold Voltage V
GS(th)
1.0 V I
D
= 250mA, V
DS
=V
GS
Static Drain-Source On-State Resistance
(1)
R
DS(on)
0.050
0.075
⍀ V
GS
= 10V, I
D
= 4.5A
V
GS
= 4.5V, I
D
= 3.2A
Forward Transconductance
(1) (3)
g
fs
8.6 S V
DS
= 15V, I
D
= 4.5A
DYNAMIC
(3)
Input Capacitance Ciss 770 pF
V
DS
= 40V, V
GS
=0V
f=1MHz
Output Capacitance Coss 92 pF
Reverse Transfer Capacitance Crss 61 pF
SWITCHING
(2) (3)
Turn-On-Delay Time td(on) 3.3 ns
V
DD
= 30V, I
D
=1A
R
G
≅6.0⍀,V
GS
= 10V
Rise Time tr 4.7 ns
Turn-Off Delay Time td(off) 29 ns
Fall Time tf 14 ns
Total Gate Charge Qg 17 nC
Gate-Source Charge Qgs 2.5 nC
V
DS
= 30V, V
GS
= 10V
I
D
= 4.5A
Gate Drain Charge Qgd 3.8 nC
SOURCE-DRAIN DIODE
Diode Forward Voltage
(1)
VSD 0.8 0.95 V T
j
=25°C, I
S
= 4.5A,
V
GS
=0V
Reverse Recovery Time
(3)
trr 20 ns
T
j
=25°C, I
S
= 2.5A,
di/dt=100A/s
Reverse Recovery Charge
(3)
Qrr 16 nC
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated)
NOTES
(1) Measured under pulsed conditions. Pulse width ⱕ 300s; duty cycle ⱕ 2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
