RN1967~RN1969
2014-03-01
1
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor)
RN1967, RN1968, RN1969
Switching, Inverter Circuit, Interface Circuit
and Driver Circuit Applications
z Including two devices in US6 (ultra super mini type 6 leads)
z With built-in bias resistors
z Simplify circuit design
z Reduce a quantity of parts and manufacturing process
z Complementary to RN2967 to RN2969
Equivalent Circuit and Bias Resistor Values
Absolute Maximum Ratings
(Ta = 25
°
C) (Q1, Q2 Common)
Characteristic Symbol Rating Unit
Collector-base voltage RN1967 to 1969 V
CBO
50 V
Collector-emitter voltage RN1967 to 1969 V
CEO
50 V
RN1967 6
RN1968 7
Emitter-base voltage
RN1969
V
EBO
15
V
Collector current RN1967 to 1969 I
C
100 mA
Collector power dissipation RN1967 to 1969 P
C
* 200 mW
Junction temperature RN1967 to 1969 T
j
150 °C
Storage temperature range RN1967 to 1969 T
stg
−55 to150 °C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*: Total rating
JEDEC ―
JEITA ―
TOSHIBA 2-2J1B
Weight: 6.8 mg (typ.)
Type No. R1 (kΩ)R2 (kΩ)
RN1967 10
47
RN1968 22
47
RN1969 47
22
Equivalent Circuit
(Top View)
Unit:mm
Start of commercial production
1992-01
