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ZXTN25050DFHTA

P1-P3P4-P6
ZXTN25050DFH
Issue 3 - September 2006 4 www.zetex.com
© Zetex Semiconductors plc 2006
Electrical characteristics (at T
amb
= 25°C unless otherwise stated)
Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-base breakdown voltage
BV
CBO
150 180 V I
C
= 100␮A
Collector-emitter breakdown
voltage (forward blocking)
BV
CEX
150 180 V I
C
= 100␮A, R
BE
ⱕ 1k⍀ or
-1V < V
BE
< 0.25V
Collector-emitter breakdown
voltage (base open)
BV
CEO
50 67 V
I
C
= 10mA
(*)
NOTES:
(*) Measured under pulsed conditions. Pulse width
ⱕ 300␮s; duty cycle ⱕ 2%.
Emitter-collector breakdown
voltage (reverse blocking)
BV
ECX
58 VI
E
= 100␮A, R
BC
ⱕ 1k⍀ or
0.25V > V
BC
> -0.25V
Emitter-collector breakdown
voltage (base open)
BV
ECO
57.4 VI
E
= 100␮A,
Emitter-base breakdown
voltage
BV
EBO
78.3 VI
E
= 100␮A
Collector cut-off current I
CBO
<1 50
20
nA
␮A
V
CB
= 150V
V
CB
= 150V, T
amb
= 100°C
Collector-emitter cut-off
current
I
CEX
-100nAV
CE
= 150V; R
BE
ⱕ 1k⍀ or
-1V < V
BE
< 0.25V
Emitter cut-off current I
EBO
<1 50 nA V
EB
= 5.6V
Collector-emitter saturation
voltage
V
CE(sat)
50 60 mV
I
C
= 1A, I
B
= 100mA
(*)
160 260 mV
I
C
= 1A, I
B
= 10mA
(*)
180 250 mV
I
C
= 2A, I
B
= 40mA
(*)
190 235 mV
I
C
= 3,5A, I
B
= 175mA
(*)
160 210 mV
I
C
= 4A, I
B
= 400mA
(*)
Base-emitter saturation
voltage
V
BE(sat)
970 1070 mV
I
C
= 4A, I
B
= 400mA
(*)
Base-emitter turn-on voltage
V
BE(on)
870 970 mV
I
C
= 4A, V
CE
= 2V
(*)
Static forward current transfer
ratio
h
FE
300 450 900
I
C
= 10mA, V
CE
= 2V
(*)
240 410
I
C
= 1A, V
CE
= 2V
(*)
20 40
I
C
= 4A, V
CE
= 2V
(*)
Transition frequency f
T
200 MHz I
C
= 50mA, V
CE
= 10V
f
= 100MHz
Output capacitance C
OBO
12 20 pF
V
CB
= 10V, f
= 1MHz
(*)
Delay time t
(d)
65 ns V
CC
= 10V. I
C
= 1A,
I
B1
= I
B2
= 10mA.
Rise time t
(r)
111 ns
Storage time t
(s)
429 ns
Fall time t
(f)
140 ns
ZXTN25050DFH
Issue 3 - September 2006 5 www.zetex.com
© Zetex Semiconductors plc 2006
Typical characteristics
ZXTN25050DFH
Issue 3 - September 2006 6 www.zetex.com
© Zetex Semiconductors plc 2006
For international sales offices visit www.zetex.com/offices
Zetex products are distributed worldwide. For details, see www.zetex.com/salesnetwork
This publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or
reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned.
The company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
Europe
Zetex GmbH
Kustermann-park
Balanstraße 59
D-81541 München
Germany
Telefon: (49) 89 45 49 49 0
Fax: (49) 89 45 49 49 49
europe.sales@zetex.com
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Zetex Inc
700 Veterans Memorial Highway
Hauppauge, NY 11788
USA
Telephone: (1) 631 360 2222
Fax: (1) 631 360 8222
usa.sales@zetex.com
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Zetex (Asia Ltd)
3701-04 Metroplaza Tower 1
Hing Fong Road, Kwai Fong
Hong Kong
Telephone: (852) 26100 611
Fax: (852) 24250 494
asia.sales@zetex.com
Corporate Headquarters
Zetex Semiconductors plc
Zetex Technology Park, Chadderton
Oldham, OL9 9LL
United Kingdom
Telephone: (44) 161 622 4444
Fax: (44) 161 622 4446
hq@zetex.com
Package outline - SOT23
Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches
Dim. Millimeters Inches Dim. Millimeters Inches
Min. Max. Min. Max. Min. Max. Max. Max.
A 2.67 3.05 0.105 0.120 H 0.33 0.51 0.013 0.020
B 1.20 1.40 0.047 0.055 K 0.01 0.10 0.0004 0.004
C - 1.10 - 0.043 L 2.10 2.50 0.083 0.0985
D 0.37 0.53 0.015 0.021 M 0.45 0.64 0.018 0.025
F 0.085 0.15 0.0034 0.0059 N 0.95 NOM 0.0375 NOM
G 1.90 NOM 0.075 NOM - - - - -
L
N
H
G
A
C
F
B
M
K
D
3 leads
P1-P3P4-P6

ZXTN25050DFHTA

Mfr. #:
Buy ZXTN25050DFHTA
Manufacturer:
Diodes Incorporated
Description:
Bipolar Transistors - BJT NPN 50V HIGH GAIN
Lifecycle:
New from this manufacturer.
Delivery:
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