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PMPB50ENEX

P1-P3P4-P6P7-P9P10-P12P13-P15
Nexperia
PMPB50ENE
30 V, N-channel Trench MOSFET
V
DS
(V)
0 431 2
aaa-026705
20
I
D
(A)
0
4
8
12
16
3.2 V
2.8 V
2.4 V
V
GS
= 10 V
4.5 V
3.7 V
T
j
= 25 °C
Fig. 6. Output characteristics: drain current as a
function of drain-source voltage; typical values
aaa-021995
V
GS
(V)
0 321
10
-4
10
-5
10
-3
I
D
(A)
10
-6
min typ max
T
j
= 25 °C; V
DS
= 5 V
Fig. 7. Sub-threshold drain current as a function of
gate-source voltage
I
D
(A)
0 20
aaa-026706
200
R
DSon
(mΩ)
0
50
100
150
15105
3.2 VV
GS
= 2.8 V
3.7 V
4.5 V
10 V
T
j
= 25 °C
Fig. 8. Drain-source on-state resistance as a function
of drain current; typical values
V
GS
(V)
0 4 8 12 16 20
aaa-026707
200
R
DSon
0
50
100
150
T
j
= 175 °C
T
j
= 25 °C
I
D
= 5.1 A
Fig. 9. Drain-source on-state resistance as a function
of gate-source voltage; typical values
PMPB50ENE All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2018. All rights reserved
Product data sheet 26 April 2018 7 / 15
Nexperia
PMPB50ENE
30 V, N-channel Trench MOSFET
V
GS
(V)
0 5
aaa-026708
20
I
D
(A)
0
4
8
12
16
4321
T
j
= 175 °C
T
j
= 25 °C
V
DS
> I
D
x R
DSon
Fig. 10. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
T
j
(°C)
-60 1801200 60
aaa-026709
1.0
0.5
1.5
2.0
a
0
Fig. 11. Normalized drain-source on-state resistance
as a function of junction temperature; typical
values
T
j
(°C)
-60 1801200 60
aaa-026710
4
V
GS(th)
(V)
0
1
2
3
max
typ
min
I
D
= 250 μA; V
DS
= V
GS
Fig. 12. Gate-source threshold voltage as a function of
junction temperature
V
DS
(V)
10
-1
10
2
101
aaa-026711
10
2
10
10
3
C
(pF)
1
C
iss
C
rss
C
oss
f = 1 MHz; V
GS
= 0 V
Fig. 13. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
PMPB50ENE All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2018. All rights reserved
Product data sheet 26 April 2018 8 / 15
Nexperia
PMPB50ENE
30 V, N-channel Trench MOSFET
Q
G
(nC)
0 62 4
aaa-026712
4
6
2
8
10
V
GS
(V)
0
V
DS
= 15 V; I
D
= 5.1 A; T
amb
= 25 °C
Fig. 14. Gate-source voltage as a function of gate
charge; typical values
003aaa508
V
GS
V
GS(th)
Q
GS1
Q
GS2
Q
GD
V
DS
Q
G(tot)
I
D
Q
GS
V
GS(pl)
Fig. 15. Gate charge waveform definitions
V
SD
(V)
0 0.4 0.8 1.2
aaa-026713
10
8
6
4
2
I
S
(A)
0
T
j
= 175 °C T
j
= 25 °C
V
GS
= 0 V
Fig. 16. Source current as a function of source-drain voltage; typical values
11. Test information
t
1
t
2
P
t
006aaa812
duty cycle δ =
t
1
t
2
Fig. 17. Duty cycle definition
PMPB50ENE All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2018. All rights reserved
Product data sheet 26 April 2018 9 / 15
P1-P3P4-P6P7-P9P10-P12P13-P15

PMPB50ENEX

Mfr. #:
Buy PMPB50ENEX
Manufacturer:
Nexperia
Description:
MOSFET PMPB50ENE/SOT1220/SOT1220
Lifecycle:
New from this manufacturer.
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