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PXTA42,115

P1-P3P4-P6P7-P9P10-P10
Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
application markets
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use
the references to Nexperia, as shown below.
Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/,
use http://www.nexperia.com
Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use
salesaddresses@nexperia.com (email)
Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
the version, as shown below:
- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
reserved
Should be replaced with:
- © Nexperia B.V. (year). All rights reserved.
If you have any questions related to the data sheet, please contact our nearest sales office via e-mail
or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and
understanding,
Kind regards,
Team Nexperia
1. Product profile
1.1 General description
NPN high-voltage transistor in a medium power and flat lead SOT89 (SC-62)
Surface-Mounted Device (SMD) plastic package.
PNP complement: PXTA92.
1.2 Features and benefits
High breakdown voltage
AEC-Q101 qualified
Medium power and flat lead SMD plastic package
1.3 Applications
Electronic ballast for fluorescent lighting
LED driver for LED chain module
High Intensity Discharge (HID) front lighting
Automotive motor management
Hook switch for wired telecom
Switch Mode Power Supply (SMPS)
1.4 Quick reference data
PXTA42
300 V, 100 mA NPN high-voltage transistor
Rev. 5 — 11 July 2011 Product data sheet
SOT89
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
CEO
collector-emitter voltage open base - - 300 V
I
C
collector current - - 100 mA
I
CM
peak collector current - - 200 mA
h
FE
DC current gain V
CE
=10V;
I
C
=30mA
40 - -
PXTA42 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 5 — 11 July 2011 2 of 9
NXP Semiconductors
PXTA42
300 V, 100 mA NPN high-voltage transistor
2. Pinning information
3. Ordering information
4. Marking
[1] * = placeholder for manufacturing site code
5. Limiting values
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
collector 6 cm
2
.
Table 2. Pinning
Pin Description Simplified outline Graphic symbol
1emitter
2 collector
3base
321
sym042
1
2
3
Table 3. Ordering information
Type number Package
Name Description Version
PXTA42 SC-62 plastic surface-mounted package; exposed die pad
for good heat transfer; 3 leads
SOT89
Table 4. Marking codes
Type number Marking code
[1]
PXTA42 *1D
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
CBO
collector-base voltage open emitter - 300 V
V
CEO
collector-emitter voltage open base - 300 V
V
EBO
emitter-base voltage open collector - 6 V
I
C
collector current - 100 mA
I
CM
peak collector current - 200 mA
I
BM
peak base current - 100 mA
P
tot
total power dissipation T
amb
25 C
[1]
- 1300 mW
T
j
junction temperature - 150 C
T
amb
ambient temperature 65 +150 C
T
stg
storage temperature 65 +150 C
P1-P3P4-P6P7-P9P10-P10

PXTA42,115

Mfr. #:
Buy PXTA42,115
Manufacturer:
Nexperia
Description:
Bipolar Transistors - BJT TRANS HV TAPE-7
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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