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1C5822.T

P1-P2
TECHNICAL DATA
DATA SHEET D0076 REV. -
China - Germany - Korea - Singapore - United States
http://www.smc-diodes.com - sales@ smc-diodes.com
1C5820
1C5821
1C5822
SILICON SCHOTTKY RECTIFIER DIE
Very Low Forward Voltage Drop
Applications:
Switching Power Supply
Converters
Free-Wheeling Diodes
Polarity Protection Diode
Features:
Soft Reverse Recovery at Low and High Temperature
Very Low Forward Voltage Drop
Low Power Loss, High Efficiency
High Surge Capacity
Guard Ring for Enhanced Durability and Long Term Reliability
Guaranteed Reverse Avalanche Characteristics
Electrically / Mechanically Stable during and after Packaging
Maximum Ratings:
Characteristics
Symbol
Condition
Max.
Units
Peak Inverse Voltage
1C5820
1C5821
1C5822
V
RWM
-
20
30
40
V
Average Forward Current
I
F(AV)
50% duty cycle, rectangular
wave form
3
A
Surge Peak Forward Current
I
FSM
tp = 8.3 ms, Half Sine Wave
80
A
Thermal Impedance
Z
θJX
-
2.5
C/W
Junction Temperature
T
J
-
-55 to+125
C
Storage Temperature
T
stg
-
-55 to+150
C
Electrical Characteristics:
Characteristics
Symbol
Condition
Max.
Forward Voltage Drop 1C5820
1C5821
1C5822
1C5820
1C5821
1C5822
1C5820
1C5821
1C5822
V
F1
@ 1A, Pulse, T
J
= 25
C
0.36
0.37
0.38
V
F2
@ 3A, Pulse, T
J
= 25
C
0.46
0.48
0.50
V
F3
@ 9.4A, Pulse, T
J
= 25
C
0.65
0.67
0.70
Reverse Current
I
R
@VRRM , T
J
= 25
C
1.5
Junction Capacitance
C
T
@V
R
= 5V, T
C
= 25
C
f
SIG
= 1MHz,
V
SIG
= 50mV (p-p)
265
TECHNICAL DATA
DATA SHEET D0076 REV. -
China - Germany - Korea - Singapore - United States
http://www.smc-diodes.com - sales@ smc-diodes.com
1C5820
1C5821
1C5822
Mechanical Dimensions: In Inches (mm)
Bottom side metalization Ag-30kA minimum
Top side metalization Al - 25 kA minimum or
Ag - 30 kA minimum.
Bottom side is cathode, top side is anode
Dimension H = 0.0105
0.001 (0.27
0.025) for Al top;
Dimension H = 0.0155
0.001 (0.39
0.025) for Ag top.
Gold Option Available for Top and/or Bottom Metalization
See Part Ordering Information below
H
Default part number is Al top, Ag bottom.
Add the following suffix for these metal combinations:
Suffix
Top
Bottom
Part Number
Al
Ag
1C5822
AG
Al
Au
1C5822AG
BB
Ag
Ag
1C5822BB
BG
Ag
Au
1C5822BG
GG
Au
Au
1C5822GG
GB
Au
Ag
1C5822GB
A = Ti (0.3 kA) / Al (25 kA)
B = Ti (1.2 kA) / Ni (1.8 kA) / Ag (30kA)
G = Ti (1.2 kA) / Ni (1.8 kA) / Au (12kA) (TOP) / Ti (1.2 kA) / Ni (1.8 kA) / Au (4kA) (BOTTOM)
A
B
0.059
0.002(1.50
0.05)
0.052
0.002(1.32
0.05)
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product
characteristics. Before ordering, purchasers are advised to contact the SMC - Sangdest Microelectronics (Nanjing) Co., Ltd sales
department for the latest version of the datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment,
medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by
means of users’ fail-safe precautions or other arrangement .
3- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any damages that may result from an accident or
any other cause during operation of the user’s units according to the datasheet(s). SMC - Sangdest Microelectronics (Nanjing) Co., Ltd
assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information,
products or circuits described in the datasheets.
4- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any failure in a semiconductor device or any
secondary damage resulting from use at a value exceeding the absolute maximum rating.
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC - Sangdest Microelectronics
(Nanjing) Co., Ltd.
6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of
SMC - Sangdest Microelectronics (Nanjing) Co., Ltd.
7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will
hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third
party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and
regulations..
B
A
P1-P2

1C5822.T

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Description:
DIODE SCHOTTKY 40V 3A DIE
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