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MMSD701T1G

P1-P3P4-P5
Semiconductor Components Industries, LLC, 2011
November, 2011 − Rev. 6
1 Publication Order Number:
MMSD301T1/D
MMSD301T1G,
SMMSD301T1G,
MMSD701T1G,
SMMSD701T1G,
SOD-123 Schottky
Barrier Diodes
The MMSD301T1, and MMSD701T1 devices are spin−offs of our
popular MMBD301LT1, and MMBD701LT1 SOT−23 devices. They
are designed for high−efficiency UHF and VHF detector applications.
Readily available to many other fast switching RF and digital
applications.
Features
Extremely Low Minority Carrier Lifetime
Very Low Capacitance
Low Reverse Leakage
AEC Qualified and PPAP Capable
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
MAXIMUM RATINGS
Rating Symbol Value Unit
Reverse Voltage
MMSD301T1G, SMMSD301T1G
MMSD701T1G, SMMSD701T1G
V
R
30
70
Vdc
Forward Current (DC) Continous I
F
200 mA
Forward Power Dissipation
T
A
= 25C
P
F
225
mW
Junction Temperature T
J
−55 to +125 C
Storage Temperature Range T
stg
−55 to +150 C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
MARKING DIAGRAM
SOD−123
CASE 425
STYLE 1
Device Package Shipping
†
ORDERING INFORMATION
MMSD301T1G SOD−123
(Pb−Free)
3,000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
xx = Specific Device Code
XT = MMSD301T1G
SMMSD301T1G
XH = MMSD701T1G
SMMSD701T1G
M = Date Code
G = Pb−Free Package
1
Cathode
2
Anode
MMSD701T1G SOD−123
(Pb−Free)
3,000 /
Tape & Reel
XXX MG
G
1
(Note: Microdot may be in either location)
SMMSD301T1G SOD−123
(Pb−Free)
3,000 /
Tape & Reel
SMMSD701T1G SOD−123
(Pb−Free)
3,000 /
Tape & Reel
MMSD301T1G, SMMSD301T1G, MMSD701T1G, SMMSD701T1G,
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
Reverse Breakdown Voltage
(I
R
= 10 mA)
MMSD301T1G, SMMSD301T1G
MMSD701T1G, SMMSD701T1G
V
(BR)R
30
70
−
−
−
−
V
Diode Capacitance
(V
R
= 0 V, f = 1.0 MHz)
MMSD301T1G, SMMSD301T1G
MMSD701T1G, SMMSD701T1G
C
T
−
−
0.9
0.5
1.5
1.0
pF
Total Capacitance
(V
R
= 15 V, f = 1.0 MHz)
MMSD301T1G, SMMSD301T1G
(V
R
= 20 V, f = 1.0 MHz)
MMSD701T1G, SMMSD701T1G
C
T
−
−
0.9
0.5
1.5
1.0
pF
Reverse Leakage
(V
R
= 25 V)
MMSD301T1G, SMMSD301T1G
(V
R
= 35 V)
MMSD701T1G, SMMSD701T1G
I
R
−
−
13
9.0
200
200
nAdc
Forward Voltage
(I
F
= 1.0 mAdc)
MMSD301T1G, SMMSD301T1G
(I
F
= 10 mA)
(I
F
= 1.0 mAdc)
MMSD701T1G, SMMSD701T1G
(I
F
= 10 mA)
V
F
−
−
−
−
0.38
0.52
0.42
0.7
0.45
0.6
0.5
1.0
Vdc
MMSD301T1G, SMMSD301T1G, MMSD701T1G, SMMSD701T1G,
http://onsemi.com
3
TYPICAL CHARACTERISTICS
MMSD301T1G, SMMSD301T1G
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 1. Total Capacitance
I
F
, FORWARD CURRENT (mA)
Figure 2. Minority Carrier Lifetime
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 3. Reverse Leakage
V
F
, FORWARD VOLTAGE (VOLTS)
Figure 4. Forward Voltage
KRAKAUER METHOD
f = 1.0 MHz
, FORWARD CURRENT (mA)I
F
, REVERSE LEAKAGE ( A)I
R
m
0.2 0.4 0.6 0.8 1.0 1.20 6.0 12 18 24
10
1.0
0.1
0.01
0.001
0204060
500
0
80 1000 3.0 6.0 9.0 12 15 21
2.8
3024 2718
2.4
2.0
1.6
1.2
0.8
0
100
10
1.0
0.1
30
10 30 50 70 90
400
300
200
100
0.4
, MINORITY CARRIER LIFETIME (ps)t
, TOTAL CAPACITANCE (pF)C
T
T
A
= -40C
T
A
= 85C
T
A
= 25C
T
A
= 100C
T
A
= 75C
T
A
= 25C
MMSD301T1
MMSD301T1
MMSD301T1
MMSD301T1
P1-P3P4-P5

MMSD701T1G

Mfr. #:
Buy MMSD701T1G
Manufacturer:
ON Semiconductor
Description:
Schottky Diodes & Rectifiers 70V 225mW Single
Lifecycle:
New from this manufacturer.
Delivery:
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