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PZU9.1BA,115

P1-P3P4-P6P7-P9P10-P12P13-P15
PZUXBA_SER_1 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 01 — 19 September 2008 6 of 14
NXP Semiconductors
PZUxBA series
Single Zener diodes
Table 9. Characteristics per type; PZU6.2BA to PZU36BA and PZU6.2BA/DG to PZU36BA/DG
T
j
=25
°
C unless otherwise specified.
PZUxBA Sel Working
voltage
V
Z
(V)
Differentialresistance
r
dif
(Ω)
Reverse
current
I
R
(nA)
Temperature
coefficient
S
Z
(mV/K)
Diode
capacitance
C
d
(pF)
[1]
Non-repetitive
peak reverse
current
I
ZSM
(A)
[2]
I
Z
=5mA I
Z
= 0.5 mA I
Z
=5mA I
Z
=5mA
Min Max Max Max Max V
R
(V) Typ Max Max
6.2 B 5.86 6.53 80 30 500 3 2.7 250 5.5
B1 5.86 6.12
B2 6.06 6.33
B3 6.26 6.53
6.8 B 6.47 7.14 60 20 500 3.5 3.4 215 5.5
B1 6.47 6.73
B2 6.65 6.93
B3 6.86 7.14
7.5 B 7.06 7.84 60 10 500 4 4.0 170 3.5
B1 7.06 7.36
B2 7.28 7.60
B3 7.52 7.84
8.2 B 7.76 8.64 60 10 500 5 4.6 150 3.5
B1 7.76 8.1
B2 8.02 8.36
B3 8.28 8.64
9.1 B 8.56 9.55 60 10 500 6 5.5 120 3.5
B1 8.56 8.93
B2 8.85 9.23
B3 9.15 9.55
10 B 9.45 10.55 60 10 100 7 6.4 110 3.5
B1 9.45 9.87
B2 9.77 10.21
B3 10.11 10.55
11 B 10.44 11.56 60 10 100 8 7.4 108 3
B1 10.44 10.88
B2 10.76 11.22
B3 11.1 11.56
12 B 11.42 12.6 80 10 100 9 8.4 105 3
B1 11.42 11.9
B2 11.74 12.24
B3 12.08 12.6
13 B 12.47 13.96 80 10 100 10 9.4 103 2.5
B1 12.47 13.03
B2 12.91 13.49
B3 13.37 13.96
PZUXBA_SER_1 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 01 — 19 September 2008 7 of 14
NXP Semiconductors
PZUxBA series
Single Zener diodes
[1] f = 1 MHz; V
R
=0V
[2] t
p
= 100 µs; square wave; T
j
=25°C prior to surge
14 B2 13.70 14.30 80 10 100 11 10.4 101 2
15 B 13.84 15.52 80 15 50 11 11.4 99 2
B1 13.84 14.46
B2 14.34 14.98
B3 14.85 15.52
16 B 15.37 17.09 80 20 50 12 12.4 97 1.5
B1 15.37 16.01
B2 15.85 16.51
B3 16.35 17.09
18 B 16.94 19.03 80 20 50 13 14.4 93 1.5
B1 16.94 17.7
B2 17.56 18.35
B3 18.21 19.03
20 B 18.86 21.08 100 20 50 15 16.4 88 1.5
B1 18.86 19.7
B2 19.52 20.39
B3 20.21 21.08
22 B 20.88 23.17 100 25 50 17 18.4 84 1.3
B1 20.88 21.77
B2 21.54 22.47
B3 22.23 23.17
24 B 22.93 25.57 120 30 50 19 20.4 80 1.3
B1 22.93 23.96
B2 23.72 24.78
B3 24.54 25.57
27 B 25.1 28.9 150 40 50 21 23.4 73 1
30 B 28 32 200 40 50 23 26.6 66 1
33 B 31 35 250 40 50 25 29.7 60 0.9
36 B 34 38 300 60 50 27 33.0 59 0.8
Table 9. Characteristics per type; PZU6.2BA to PZU36BA and PZU6.2BA/DG to PZU36BA/DG
…continued
T
j
=25
°
C unless otherwise specified.
PZUxBA Sel Working
voltage
V
Z
(V)
Differentialresistance
r
dif
(Ω)
Reverse
current
I
R
(nA)
Temperature
coefficient
S
Z
(mV/K)
Diode
capacitance
C
d
(pF)
[1]
Non-repetitive
peak reverse
current
I
ZSM
(A)
[2]
I
Z
=5mA I
Z
= 0.5 mA I
Z
=5mA I
Z
=5mA
Min Max Max Max Max V
R
(V) Typ Max Max
PZUXBA_SER_1 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 01 — 19 September 2008 8 of 14
NXP Semiconductors
PZUxBA series
Single Zener diodes
T
j
=25°C (prior to surge) T
j
=25°C
Fig 1. Non-repetitive peak reverse power dissipation
as a function of pulse duration; maximum
values
Fig 2. Forward current as a function of forward
voltage; typical values
T
j
=25°C to 150 °C
V
Z
= 2.4 V to 4.3 V
T
j
=25°C to 150 °C
V
Z
= 4.7 V to 12 V
Fig 3. Temperature coefficient as a function of
working current; typical values
Fig 4. Temperature coefficient as a function of
working current; typical values
006aab215
10
2
10
10
3
P
ZSM
(W)
1
t
p
(s)
10
−4
10
−2
10
−3
V
F
(V)
0.6 10.8
mbg781
100
200
300
I
F
(mA)
0
060
0
−2
−3
−1
mgl273
20 40
I
Z
(mA)
S
Z
(mV/K)
4.3
3.9
3.6
3.3
3.0
2.4
2.7
02016
10
0
−5
5
mgl274
4812
I
Z
(mA)
S
Z
(mV/K)
4.7
12
11
10
9.1
8.2
7.5
6.8
6.2
5.6
5.1
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PZU9.1BA,115

Mfr. #:
Buy PZU9.1BA,115
Manufacturer:
Nexperia
Description:
Zener Diodes 40W SNGL 200mA 9.55V Single Zener diodes
Lifecycle:
New from this manufacturer.
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