IRGR3B60KD2PbF
2 www.irf.com
V
CC
= 80% (V
CES
), V
GE
= 15V, L = 100µH, R
G
= 100Ω.
When mounted on 1" square PCB (FR-4 or G-10 Material ) . For recommended
footprint and soldering techniques refer to application note #AN-994.
Energy losses include "tail" and diode reverse recovery.
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
Ref.Fig.
V
(BR)CES
Collector-to-Emitter Breakdown Voltage
600——V
V
GE
= 0V, I
C
= 500µA
∆V
(BR)CES
/∆T
J
Temperature Coeff. of Breakdown Volta
e —0.32—V/°C
V
GE
= 0V, I
C
= 1mA (25°C-150°C)
V
CE(on)
Collector-to-Emitter Voltage — 1.9 2.4
I
C
= 3.0A, V
GE
= 15V
5,6,7
—2.22.6V
I
C
= 3.0A, V
GE
= 15V, T
J
= 150°C
9,10,11
V
GE(th)
Gate Threshold Voltage 3.5 4.5 5.5
V
CE
= V
GE
, I
C
= 250µA
9,10,11
∆
V
GE(th)
/
∆
T
J
Threshold Voltage temp. coefficient — -8.5 — mV/°
V
CE
= V
GE
, I
C
= 1mA (25°C-150°C)
12
gfe Forward Transconductance — 1.9 — S
V
CE
= 50V, I
C
= 3.0A, PW = 80µs
I
CES
Zero Gate Voltage Collector Current — 1.0 150 µA
V
GE
= 0V, V
CE
= 600V
— 200 500
V
GE
= 0V, V
CE
= 600V, T
J
= 150°C
V
FM
Diode Forward Voltage Drop — 1.5 1.8 V
I
F
= 3.0A, V
GE
= 0V
8
—1.51.8
I
F
= 3.0A, V
GE
= 0V, T
J
= 150°C
I
GES
Gate-to-Emitter Leakage Current — — ±100 nA
V
GE
= ±20V, V
CE
= 0V
Switchin
Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
Ref.Fig.
Q
g
Total Gate Charge (turn-on) — 13 20
I
C
= 3.0A
23
Q
ge
Gate-to-Emitter Charge (turn-on) — 1.5 2.3 nC
V
CC
= 400V
CT1
Q
gc
Gate-to-Collector Charge (turn-on) — 6.6 9.9
V
GE
= 15V
E
on
Turn-On Switching Loss — 62 75
I
C
= 3.0A, V
CC
= 400V
CT4
E
off
Turn-Off Switching Loss — 39 50 µJ
V
GE
= 15V, R
G
= 100Ω, L = 2.5mH
E
tot
Total Switching Loss — 100 120
T
J
= 25°C
t
d(on)
Turn-On delay time — 18 22
I
C
= 3.0A, V
CC
= 400V
t
r
Rise time — 15 21 ns
V
GE
= 15V, R
G
= 100
Ω
, L = 2.5mH
CT4
t
d(off)
Turn-Off delay time — 110 120
T
J
= 25°C
t
f
Fall time — 68 80
E
on
Turn-On Switching Loss — 91 100
I
C
= 3.0A, V
CC
= 400V
CT4
E
off
Turn-Off Switching Loss — 98 140 µJ
V
GE
= 15V, R
G
= 100
Ω
, L = 2.5mH
13,15
E
tot
Total Switching Loss — 190 230
T
J
= 150°C
WF1,WF2
t
d(on)
Turn-On delay time — 18 22
I
C
= 3.0A, V
CC
= 400V
14,16
t
r
Rise time — 17 22 ns
V
GE
= 15V, R
G
= 100Ω, L = 2.5mH
CT4
t
d(off)
Turn-Off delay time — 120 140
T
J
= 150°C
WF1
t
f
Fall time — 91 105
WF2
C
ies
Input Capacitance — 190 —
V
GE
= 0V
C
oes
Output Capacitance — 23 — pF
V
CC
= 30V
22
C
res
Reverse Transfer Capacitance — 6.6 — f = 1.0MHz
RBSOA Reverse Bias Safe Operating Area FULL SQUARE
T
J
= 150°C, I
C
= 15.6A, Vp = 600V
4
V
CC
=500V,V
GE
=+15V to 0V,R
G
= 100
Ω
CT2
SCSOA Short Circuit Safe Operating Area 10 — — µs
T
J
= 150°C, Vp = 600V, R
G
= 100Ω
CT3
V
CC
=360V,V
GE
= +15V to 0V
WF4
Erec Reverse Recovery Energy of the Diode — 38 44 µJ
T
J
= 150°C
17,18,19
t
rr
Diode Reverse Recovery Time — 77 84 ns
V
CC
= 400V, I
F
= 3.0A, L = 2.5mH
20,21
I
rr
Diode Peak Reverse Recovery Current — 4.8 5.3 A
V
GE
= 15V, R
G
= 100
Ω
CT4,WF3
