FDU8780 Datasheet FDU8780, FDU8780_F071 | P1-P3

March 2006

FDD8780/FDU8780 N-Channel PowerTrench

®

MOSFET

FDD8780/FDU8780 Rev. B

www.fairchildsemi.com1

FDD8780/FDU8780

N-Channel PowerTrench

®

MOSFET

25V, 35A, 8.5mΩ

General Description

This N-Channel MOSFET has been designed specifically

to improve the overall efficiency of DC/DC converters using

either synchronous or conventional switching PWM

controllers. It has been optimized for low gate charge, low

r

DS(on)

and fast switching speed.

Application

 Vcore DC-DC for Desktop Computers and Servers

 VRM for Intermediate Bus Architecture

Features

 Max r

DS(on)

= 8.5mΩ at V

GS

= 10V, I

D

= 35A

 Max r

DS(on)

= 12.0mΩ at V

GS

= 4.5V, I

D

= 35A

 Low gate charge: Q

g(10)

= 21nC(Typ), V

GS

= 10V

 Low gate resistance

 Avalanche rated and 100% tested

 RoHS Compliant

MOSFET Maximum Ratings T

C

= 25°C unless otherwise noted

Thermal Characteristics

Package Marking and Ordering Information

Symbol Parameter Ratings Units

V

DS

Drain to Source Voltage 25 V

V

GS

Gate to Source Voltage ±20 V

I

D

Drain Current -Continuous (Package Limited) 35

A -Continuous (Die Limited) 60

-Pulsed (Note 1) 224

E

AS

Single Pulse Avalanche Energy (Note 2) 73 mJ

P

D

Power Dissipation 50 W

T

J

, T

STG

Operating and Storage Temperature -55 to 175 °C

R

θJC

Thermal Resistance, Junction to Case TO-252,TO-251 3.0 °C/W

R

θJA

Thermal Resistance, Junction to Ambient TO-252,TO-251 100 °C/W

R

θJA

Thermal Resistance, Junction to Ambient TO-252,1in

2

copper pad area 52 °C/W

Device Marking Device Package Reel Size Tape Width Quantity

FDD8780 FDD8780 TO-252AA 13’’ 12mm 2500 units

FDU8780 FDU8780 TO-251AA N/A(Tube) N/A 75 units

FDU8780 FDU8780_F071 TO-251AA N/A(Tube) N/A 75 units

L

E

A

D

F

R

E

M

T

A

E

L

N

T

I

O

M

P

E

N

I

D

G

S

Short Lead I-PAK

I-PAK

(TO-251AA)

G

DS

G

D

S

FDD8780/FDU8780 N-Channel PowerTrench

®

MOSFET

FDD8780/FDU8780 Rev. B

www.fairchildsemi.com2

Electrical Characteristics T

J

= 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

B

VDSS

Drain to Source Breakdown Voltage I

D

= 250µA, V

GS

= 0V 25 V

∆B

VDSS

∆T

J

Breakdown Voltage Temperature

Coefficient

I

D

= 250µA, referenced to

25

°C

12 mV/°C

I

DSS

Zero Gate Voltage Drain Current

V

DS

= 20V,

V

GS

= 0V

1

µA

T

J

= 150°C 250

I

GSS

Gate to Source Leakage Current V

GS

= ±20V ±100 nA

On Characteristics

V

GS(th)

Gate to Source Threshold Voltage V

GS

= V

DS

, I

D

= 250µA 1.2 1.8 2.5 V

∆V

GS(th)

∆T

J

Gate to Source Threshold Voltage

Temperature Coefficient

I

D

= 250µA, referenced to

25

°C

-6.3 mV/°C

r

DS(on)

Drain to Source On Resistance

V

GS

= 10V, I

D

= 35A 6.5 8.5

mΩ

V

GS

= 4.5V, I

D

= 35A 9.1 12.0

V

GS

= 10V, I

D

= 35A

T

J

= 175°C

10.4 15.0

Dynamic Characteristics

C

iss

Input Capacitance

V

DS

= 13V, V

GS

= 0V,

f = 1MHz

1080 1440 pF

C

oss

Output Capacitance 265 355 pF

C

rss

Reverse Transfer Capacitance 180 270 pF

R

g

Gate Resistance f = 1MHz 0.9 Ω

Switching Characteristics

t

d(on)

Turn-On Delay Time

V

DD

= 13V, I

D

= 35A

V

GS

= 10V, R

GS

= 17Ω

7 14 ns

t

r

Rise Time 9 18 ns

t

d(off)

Turn-Off Delay Time 43 69 ns

t

f

Fall Time 24 38 ns

Q

g

Total Gate Charge V

GS

= 0V to 10V

V

DD

= 13V

I

D

= 35A

I

g

= 1.0mA

21 29 nC

Q

g

Total Gate Charge V

GS

= 0V to 5V 11.2 16 nC

Q

gs

Gate to Source Gate Charge 3.5 nC

Q

gd

Gate to Drain “Miller”Charge 4.7 nC

Drain-Source Diode Characteristics

V

SD

Source to Drain Diode Forward Voltage

V

GS

= 0V, I

S

= 35A 0.92 1.25

V

GS

= 0V, I

S

= 15A 0.84 1.0

t

rr

Reverse Recovery Time I

F

= 35A, di/dt = 100A/µs 28 42 ns

Q

rr

Reverse Recovery Charge I

F

= 35A, di/dt = 100A/µs 20 30 nC

Notes:

1: Pulse time < 300µs, Duty cycle = 2%.

2: Starting T

J

= 25

o

C, L = 0.3mH, I

AS

= 22A ,V

DD

= 23V, V

GS

= 10V.

FDD8780/FDU8780 N-Channel PowerTrench

®

MOSFET

FDD8780/FDU8780 Rev. B

www.fairchildsemi.com3

Typical Characteristics T

J

= 25°C unless otherwise noted

Figure 1. On Region Characteristics

01234

0

10

20

30

40

50

60

70

PULSE DURATION = 80µs

DUTY CYCLE = 0.5%MAX

V

GS

= 3V

V

GS

= 3.5V

V

GS

= 4.5V

V

GS

= 10V

I

D

, DRAIN CURRENT (A)

V

DS

, DRAIN TO SOURCE VOLTAGE (V)

Figure 2. Normalized

0 10203040506070

0

1

2

3

4

5

6

7

PULSE DURATION = 80µs

DUTY CYCLE = 0.5%MAX

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

I

D

, DRAIN CURRENT(A)

V

GS

= 10V

V

GS

= 4.5V

V

GS

= 3.5V

V

GS

= 3V

On-Resistance vs Drain

Current and Gate Voltage

Figure 3.

-80 -40 0 40 80 120 160 200

0.6

0.8

1.0

1.2

1.4

1.6

1.8

I

D

= 35A

V

GS

= 10V

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

T

J

, JUNCTION TEMPERATURE (

o

C)

Normalized On Resistance vs Junction

Temperature

Figure 4.

3.0 4.5 6.0 7.5 9.0

0

10

20

30

40

PULSE DURATION = 80µs

DUTY CYCLE = 0.5%MAX

T

J

= 175

o

C

T

J

= 25

o

C

I

D

= 35A

r

DS(on)

, ON-RESISTANCE (mΩ)

V

GS

, GATE TO SOURCE VOLTAGE (V)

10

On-Resistance vs Gate to Source

Voltage

Figure 5. Transfer Characteristics

1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5

0

10

20

30

40

50

60

70

PULSE DURATION = 80µs

DUTY CYCLE = 0.5%MAX

T

J

= -55

o

C

T

J

= 25

o

C

T

J

= 175

o

C

I

D

, DRAIN CURRENT (A)

V

GS

, GATE TO SOURCE VOLTAGE (V)

Figure 6.

0.00.20.40.60.81.01.21.4

1E-3

0.01

0.1

1

10

100

T

J

= -55

o

C

T

J

= 25

o

C

T

J

= 175

o

C

V

GS

= 0V

I

S

, REVERSE DRAIN CURRENT (A)

V

SD

, BODY DIODE FORWARD VOLTAGE (V)

200

Source to Drain Diode Forward

Voltage vs Source Current

FDU8780

FDU8780

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