MAX660
CMOS Monolithic Voltage Converter
_______________________________________________________________________________________ 7
frequency eight times. In the third mode, the oscillator
frequency is lowered by connecting a capacitor
between OSC and GND. FC can still multiply the fre-
quency by eight times in this mode, but for a lower
range of frequencies (see Typical Operating
Characteristics).
In the inverter mode, OSC may also be overdriven by an
external clock source that swings within 100mV of V+
and GND. Any standard CMOS logic output is suitable
for driving OSC. When OSC is overdriven, FC has no
effect. Also, LV must be grounded when overdriving
OSC. Do not overdrive OSC in voltage-doubling mode.
Note: In all modes, the frequency of the signal appear-
ing at CAP+ and CAP- is one-half that of the oscillator.
Also, an undesirable effect of lowering the oscillator fre-
quency is that the effective output resistance of the
charge pump increases. This can be compensated by
increasing the value of the charge-pump capacitors
(see Capacitor Selection section and Typical Operating
Characteristics).
In some applications, the 5kHz output ripple frequency
may be low enough to interfere with other circuitry. If
desired, the oscillator frequency can then be increased
through use of the FC pin or an external oscillator as
described above. The output ripple frequency is one-
half the selected oscillator frequency. Increasing the
clock frequency increases the MAX660’s quiescent
current, but also allows smaller capacitance values to
be used for C1 and C2.
________________Capacitor Selection
Three factors (in addition to load current) affect the
MAX660 output voltage drop from its ideal value:
1) MAX660 output resistance
2) Pump (C1) and reservoir (C2) capacitor ESRs
3) C1 and C2 capacitance
The voltage drop caused by MAX660 output resistance
is the load current times the output resistance.
Similarly, the loss in C2 is the load current times C2’s
ESR. The loss in C1, however, is larger because it
handles currents that are greater than the load current
during charge-pump operation. The voltage drop due
to C1 is therefore about four times C1’s ESR multiplied
by the load current. Consequently, a low (or high) ESR
capacitor has a much greater impact on performance
for C1 than for C2.
Generally, as the pump frequency of the MAX660
increases, the capacitance values required to maintain
comparable ripple and output resistance diminish pro-
portionately. The curves of Figure 2 show the total circuit
output resistance for various capacitor values (the pump
and reservoir capacitors’ values are equal) and oscillator
frequencies. These curves assume 0.25 capacitor ESR
and a 5.25 MAX660 output resistance, which is why
the flat portion of the curve shows a 6.5(R
O
MAX660 +
4 (ESR
C1
) + ESR
C2
) effective output resistance. Note:
R
O
= 5.25 is used, rather than the typical 6.5,
because the typical specification includes the effect of
the ESRs of the capacitors in the test circuit.
In addition to the curves in Figure 2, four bar graphs in
the Typical Operating Characteristics show output cur-
rent for capacitances ranging from 0.33µF to 220µF.
Output current is plotted for inputs of 4.5V (5V-10%) and
3.0V (3.3V-10%), and allow for 10% and 20% output
droop with each input voltage. As can be seen from the
graphs, the MAX660 6.5 series resistance limits
increases in output current vs. capacitance for values
much above 47µF. Larger values may still be useful,
however, to reduce ripple.
To reduce the output ripple caused by the charge
pump, increase the reservoir capacitor C2 and/or
reduce its ESR. Also, the reservoir capacitor must have
low ESR if filtering high-frequency noise at the output is
important.
Not all manufacturers guarantee capacitor ESR in the
range required by the MAX660. In general, capacitor ESR
is inversely proportional to physical size, so larger capaci-
tance values and higher voltage ratings tend to reduce
ESR.
20
0
1
6
12
MAX660-fig 2
CAPACITANCE (
µ
F)
TOTAL OUTPUT SOURCE RESISTANCE (
)
18
16
14
10
8
4
2
2 4 6 8 10 100 1000
100kHz
50kHz
10kHz
20kHz
5kHz
2kHz
1kHz
ESR = 0.25
FOR BOTH
C1 AND C2
MAX660 OUTPUT
SOURCE RESISTANCE
ASSUMED TO BE
5.25
Figure 2. Total Output Source Resistance vs. C1 and C2
Capacitance (C1 = C2)
MAX660
CMOS Monolithic Voltage Converter
8 _______________________________________________________________________________________
The following is a list of manufacturers who provide
low-ESR electrolytic capacitors:
Cascading Devices
To produce larger negative multiplication of the initial
supply voltage, the MAX660 may be cascaded as
shown in Figure 3. The resulting output resistance is
approximately equal to the sum of the individual
MAX660 R
OUT
values. The output voltage, where n is
an integer representing the number of devices cascad-
ed, is defined by V
OUT
= -n (V
IN
).
Paralleling Devices
Paralleling multiple MAX660s reduces the output resis-
tance. As illustrated in Figure 4, each device requires
its own pump capacitor C1, but the reservoir capacitor
C2 serves all devices. The value of C2 should be
increased by a factor of n, where n is the number of
devices. Figure 4 shows the equation for calculating
output resistance.
3
4
2
C1n
3
4
88
2
5
C1
C2
C2n
+V
IN
V
OUT
V
OUT
= -nV
IN
5
MAX660
"n"
MAX660
"1"
Figure 3. Cascading MAX660s to Increase Output Voltage
3
4
2
C1n
3
4
8
8
2
5
C1
C2
+V
IN
MAX660
"n"
5
R
L
R
OUT
=
R
OUT
(of MAX660)
n (NUMBER OF DEVICES)
MAX660
"1"
Figure 4. Paralleling MAX660s to Reduce Output Resistance
Manufacturer/
Series
Phone Fax Comments
AVX TPS Series (803) 946-0690 (803) 626-3123
Low-ESR
tantalum SMT
AVX TAG Series (803) 946-0690 (803) 626-3123
Low-cost
tantalum SMT
Matsuo 267 Series (714) 969-2491 (714) 960-6492
Low-cost
tantalum SMT
Sprague 595
Series
(603) 224-1961 (603) 224-1430
Aluminum elec-
trolytic thru-hole
Sanyo MV-GX
Series
(619) 661-6835 (619) 661-1055
Aluminum elec-
trolytic SMT
Sanyo CV-GX
Series
(619) 661-6835 (619) 661-1055
Aluminum elec-
trolytic thru-hole
Nichicon PL
Series
(847) 843-7500 (847) 843-2798
Low-ESR
tantalum SMT
United Chemi-Con
(Marcon)
(847) 696-2000 (847) 696-9278 Ceramic SMT
TDK (847) 390-4373 (847) 390-4428 Ceramic SMT
Combined Positive Supply Multiplication
and Negative Voltage Conversion
This dual function is illustrated in Figure 5. In this cir-
cuit, capacitors C1 and C3 perform the pump and
reservoir functions respectively for generation of the
negative voltage. Capacitors C2 and C4 are respec-
tively pump and reservoir for the multiplied positive
voltage. This circuit configuration, however, leads to
higher source impedances of the generated supplies.
This is due to the finite impedance of the common
charge-pump driver.
MAX660
CMOS Monolithic Voltage Converter
_______________________________________________________________________________________ 9
1M
1M
2
3
4
8
8
6
2
7
1
6
54
5
620k
220k
150µF
150
µF
150µF
3V LITHIUM BATTERY
DURACELL DL123A
OPEN-DRAIN
LOW-BATTERY OUTPUT
5V/100mA
MAX660
MAX667
IN OUT
LBO
DD
SET
GND SHDN
NOTE: ALL 150µF CAPACITORS ARE MAXC001, AVAILABLE FROM MAXIM.
LBI
1M
Figure 5. Combined Positive Multiplier and Negative Converter
5
3
4
8
6
2
C1
C3
C4
C2
D2
D1
+V
IN
D1, D2 = 1N4148
V
OUT
= -V
IN
V
OUT
= (2V
IN
) -
(V
FD1
) - (V
FD2
)
MAX660
Figure 6. MAX660 generates a +5V regulated output from a 3V
lithium battery and operates for 16 hours with a 40mA load.

MAX660EPA+

Mfr. #:
Manufacturer:
Maxim Integrated
Description:
Switching Voltage Regulators CMOS Monolithic Voltage Converter
Lifecycle:
New from this manufacturer.
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