2015-12-15 1
2015-1 2-15
Silicon NPN Phototransistor in MIDLED package
Version 1.3
SFH 3605
Ordering Information
Features:
Spectral range of sensitivity: (typ) 500 ... 1100 nm
Package: MIDLED, Silicone, colourless, clear
Special: Sidelooker
Narrow angle (± 20°)
Low profile component (1,6 mm)
Emitter in same package (SFH 46xx) available
The product qualification test plan is based on the guidelines of AEC-Q101-REV-C, Stress Test Qualification
for Automotive Grade Discrete Semiconductors.
Applications
Interrupters, light curtains
Sensors (consumer and industrial applications)
Automotive applications
Proximity sensor
Type: Photocurrent Ordering Code
I
PCE
[µA]
λ = 950 nm, E
e
= 0.1 mW/cm
2
,
V
CE
= 5 V
SFH 3605 100 ... 500 Q65110A1574
SFH 3605-2/3 100 ... 320 Q65110A2663
SFH 3605-3/4 160 ... 500 Q65110A2664
Note: Only one bin within one packing unit (variation less than 2:1)
2015-12-15 2
Version 1.3 SFH 3605
Maximum Ratings (T
A
= 25 °C)
Characteristics (T
A
= 25 °C)
Parameter Symbol Values Unit
Operating and storage temperature range T
op
; T
stg
-40 ... 100 °C
Collector-emitter voltage V
CE
35 V
Collector current I
C
15 mA
Collector surge current
(τ < 10 µs)
I
CS
75 mA
Emitter-collector voltage V
EC
7 V
Total Power dissipation P
tot
130 mW
ESD withstand voltage
(acc. to ANSI/ ESDA/ JEDEC JS-001 - HBM)
V
ESD
2000 V
Thermal resistance junction - ambient
1) page 12
R
thJA
340 K/W
Thermal restistance junction
2) page 12
R
thJS
180 K/W
Parameter Symbol Values Unit
Wavelength of max. sensitivity (typ) λ
S max
990 nm
Spectral range of sensitivity (typ) λ
10%
(typ) 500
... 1100
nm
Radiant sensitive area (typ) A 0.04 mm
2
Dimensions of chip area (typ) L x W (typ) 0.35 x
0.35
mm x
mm
Half angle (typ) ϕ ± 20 °
Capacitance
(V
CE
= 5 V, f = 1 MHz, E = 0)
(typ) C
CE
1.3 pF
Dark current
(V
CE
= 20 V, E = 0)
(typ (max)) I
CE0
1 (≤ 50) nA
Version 1.3 SFH 3605
2015-12-15 3
Grouping (T
A
= 25 °C, λ = 950 nm)
Group Min Photocurrent Max Photocurrent Rise and fall time Collector-emitter
saturation
voltage
E
e
= 0.1 mW/cm
2
,
V
CE
= 5 V
E
e
= 0.1 mW/cm
2
,
V
CE
= 5 V
I
C
= 1 mA, V
CC
= 5
V, R
L
= 1 kΩ
I
C
= I
PCEmin
x 0.3, E
e
= 0.1 mW/cm
2
I
PCE, min
[µA] I
PCE, max
[µA] t
r
, t
f
[µs] V
CEsat
[mV]
-2 100 200 30 150
-3 160 320 45 150
-4 250 500 70 150
Note.: I
PCEmin
is the min. photocurrent of the specified group.
Relative Spectral Sensitivity
3) page 12
S
rel
= f(λ), axial direction
Photocurrent
3) page 12
I
PCE
/ I
PCE
(25°C)
= f(T
A
), V
CE
= 5 V
400
0
20
40
S
rel
80
60
%
100
λ
OHF02405
500 600 700 800 900 nm 1100
10
30
50
70
T
OHF01524
A
0
-25
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0 25 50 75 100
Ι
PCE
PCE
Ι
25
C

SFH 3605-3/4-Z

Mfr. #:
Manufacturer:
Description:
Optical Sensors Phototransistors PHOTOTRANSISTOR
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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