NTMFS4955N
http://onsemi.com
5
TYPICAL CHARACTERISTICS
Figure 7. Capacitance Variation Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V) Qg, TOTAL GATE CHARGE (nC)
302520151050
0
200
400
800
1000
1200
1400
1600
221814126420
0
1
3
5
6
8
9
11
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
R
G
, GATE RESISTANCE (W)
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
100101
1
10
100
1000
0.90.8 1.00.70.60.50.40.3
0
5
10
15
20
25
30
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V) T
J
, STARTING JUNCTION TEMPERATURE (°C)
1001010.10.01
0.01
0.1
1
10
100
1000
150125100755025
0
4
12
16
24
28
40
C, CAPACITANCE (pF)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
t, TIME (ns)
I
S
, SOURCE CURRENT (A)
I
D
, DRAIN CURRENT (A)
E
AS
, SINGLE PULSE DRAIN−TO−
SOURCE AVALANCHE ENERGY (mJ)
600
T
J
= 25°C
V
GS
= 0 V
C
iss
C
oss
C
rss
810 16 20
2
4
7
10
T
J
= 25°C
V
GS
= 10 V
V
DD
= 15 V
I
D
= 30 A
QT
Qgs Qgd
V
GS
= 10 V
V
DD
= 15 V
I
D
= 15 A
t
d(off)
t
d(on)
t
f
t
r
T
J
= 25°C
V
GS
= 0 V
T
J
= 125°C
10 ms
100 ms
1 ms
10 ms
dc
0 V < V
GS
< 10 V
Single Pulse
T
C
= 25°C
8
20
32
I
D
= 26 A
R
DS(on)
Limit
Thermal Limit
Package Limit
36
