VBO22-14NO8

© IXYS All rights reserved
1 - 2
20081024a
VBO 22
IXYS reserves the right to change limits, test conditions and dimensions.
I
dAV
= 21 A
V
RRM
= 800-1800 V
Single Phase Rectifier Bridge
Features
• Package with ¼" fast-on terminals
• Isolation voltage 3000 V~
• Planar passivated chips
• Blocking voltage up to 1800 V
• Low forward voltage drop
• UL registered E 72873
Applications
• Supplies for DC power equipment
• Input rectiers for PWM inverter
• Battery DC power supplies
• Field supply for DC motors
Advantages
• Easy to mount with one screw
• Space and weight savings
• Improved temperature & power cycling
Symbol Conditions Maximum Ratings
I
dAV
I
dAVM
T
C
= 85°C, module
T
C
= 63°C, module
17
21
A
A
I
FSM
T
VJ
= 45°C; t = 10 ms (50 Hz)
V
R
= 0 t = 8.3 ms (60 Hz)
380
440
A
A
T
VJ
= T
VJM
; t = 10 ms (50 Hz)
V
R
= 0 t = 8.3 ms (60 Hz)
360
400
A
A
I
2
t
T
VJ
= 45°C; t = 10 ms (50 Hz)
V
R
= 0 t = 8.3 ms (60 Hz)
725
800
A
2
s
A
2
s
T
VJ
= T
VJM
; t = 10 ms (50 Hz)
V
R
= 0 t = 8.3 ms (60 Hz)
650
650
A
2
s
A
2
s
T
VJ
T
VJM
T
stg
-40...+150
150
-40...+150
°C
°C
°C
V
ISOL
50/60 Hz, RMS t = 1 min
I
ISOL
< 1 mA t = 1 s
2500
3000
V~
V~
M
d
Mounting torque (M5)
(10-32 UNF)
2 ±10%
18 ±10%
Nm
lb.in.
Weight
Typ. 22 g
V
RSM
V
RRM
Type
V
DSM
V
DRM
V V
800 800 VBO 22-08NO8
1200 1200 VBO 22-12NO8
1400 1400 VBO 22-14NO8
1600 1600 VBO 22-16NO8
1800 1800 VBO 22-18NO8
Symbol Conditions Characteristic Values
I
R
V
R
= V
RRM
T
VJ
= 25°C
T
VJ
= T
VJM
0.3
5.0
mA
mA
V
F
I
F
= 150 A T
VJ
= 25°C 2.2 V
V
T0
r
t
For power-loss calculations only 0.85
12
V
mW
R
thJC
R
thCH
per diode; 120° el.
per module
per diode; 120° el.
per module
8.20
2.05
9.40
2.35
K/W
K/W
K/W
K/W
d
S
d
A
a
Creeping distance on surface
Creepage distance in air
Max. allowable acceleration
12.7
9.4
50
mm
mm
m/s
2
Data according to IEC 60747 and refer to a single diode unless otherwise stated.
+
~
~
-
+
-
~
~
Dimensions in mm (1 mm = 0.0394“)
6.3 x 0.8
A
B
D
E
© IXYS All rights reserved
2 - 2
20081024a
VBO 22
IXYS reserves the right to change limits, test conditions and dimensions.
1 1.5
0
5
10
15
20
25
30
150°C
25°C
V
F
[V]
I
F
[A]
I
F(OV)
/ I
FSM
1.6
1.4
1.2
1.0
0.8
0.6
0.4
1.8
10
0
10
1
10
2
10
3
t [ms]
0 V
RRM
½ V
RRM
1 V
RRM
I
FSM
[A]
T
VJ
= 45°C T
VJ
= 150°C
380 340
1.9
2 4 6 10
T
VJ
= 45°C
T
VJ
= 150°C
t [ms]
1
10
2
A
2
s
10
3
10 20
I
FAVM
[A]
P
VTOT
[W]
DC
sin. 180°
rec. 120°
rec. 60°
rec. 30°
10
20
30
40
50
0
= R
thCA
[K/W]
9.95
3.95
1.95
0.95
0.45
0.05
T
amb
[K]
0 50 100 150
T
C
[°C]
150
130
110
90
70
50
I
dAV
[A]
T
C
[°C]
0
10
20
30
50 100 150 200
DC
sin.
180°
rec. 120°
rec. 60°
rec. 30°
t [s]
Z
th
[K/W]
2
4
6
8
10
0,01 0,1 1 10
Z
thJK
Z
thJC
Fig. 1 Forward current versus
voltage drop per diode
Fig. 2 Surge overload current per diode
I
FSM
: Crest value. t: duration
Fig. 3 I
2
t versus time (1-10 ms)
per diode or thyristor
Fig. 4 Power dissipation vs. direct output current and ambient temperature Fig. 5 Maximum forward current
at case temperature
Fig. 6 Transient thermal impedance per diode or thyristor, calculated

VBO22-14NO8

Mfr. #:
Manufacturer:
Description:
BRIDGE RECT 1P 1.4KV 21A FO-B
Lifecycle:
New from this manufacturer.
Delivery:
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Payment:
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