MSD30
MSD30 – Rev 0 www.microsemi.com
Dec, 2009 1/3
Module Type
TYPE V
RRM
V
RSM
MSD30-08
MSD30-12
MSD30-16
MSD30-18
800V
1200V
1600V
1800V
900V
1300V
1700V
1900V
Maximum Ratings
Symbol Conditions Values Units
ID
Tc=85℃
30 A
IFSM
t=10mS Tv
=45℃
300 A
i
2
t
t=10mS Tv
=45℃
450 A
2
s
Visol a.c.50Hz;r.m.s.;1min 3000 V
Tvj -40 to 150
℃
Tstg -40 to 125
℃
Ms To heatsink(M5) 3±5% Nm
Weight Module 78 g
Thermal Characteristics
Symbol Conditions Values Units
Rth(j-c) Per diode 1.5
℃
W
Rth(c-s) Module 0.2
℃
W
Electrical Characteristics
Circuit
Glass Passivated Three
Phase Rectifier Bridge
V
RRM 800 to 1800V
ID 30 Amp
Features
y Three phase bridge rectifier
y Blocking voltage:800 to 1800V
y Heat transfer through aluminum oxide DCB
ceramic isolated metal baseplate
y Glass passivated chip
Applications
y Three phase rectifiers for power supplies
y Rectifiers for DC motor field supplies
y Battery charger rectifiers
y In
ut rectifiers for variable fre
uenc
drives
4
3
7
2
1
MSD
Symbol Conditions Values Units
VFM
T=25℃ IFM =100A
1.6 V
IRD
Tvj =25℃ VRD=VRRM
Tvj =150℃ VRD=VRRM
≤0.2
≤3
mA
mA
