IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFP72N30X3M
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734B2 7,157,338B2
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728B1 6,583,505 6,710,463 6,771,478B2 7,071,537
Terminals: 1 - Gate
2 - Drain
3 - Source
1 2 3
OVERMOLDED TO-220
(IXFP...M)
Note 1. Pulse test, t 300s, duty cycle, d 2%.
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(T
J
= 25C, Unless Otherwise Specified) Min. Typ. Max
I
S
V
GS
= 0V 72 A
I
SM
Repetitive, pulse Width Limited by T
JM
288 A
V
SD
I
F
= I
S
, V
GS
= 0V, Note 1 1.4 V
t
rr
100 ns
Q
RM
750 nC
I
RM
15 A
I
F
= 36A, -di/dt = 100A/μs
V
R
= 100V
Symbol Test Conditions Characteristic Values
(T
J
= 25C, Unless Otherwise Specified) Min. Typ. Max
g
fs
V
DS
= 10V, I
D
= 36A, Note 1 36 60 S
R
Gi
Gate Input Resistance 1.7
C
iss
5400 pF
C
oss
V
GS
= 0V, V
DS
= 25V, f = 1MHz 800 pF
C
rss
2 pF
C
o(er)
310 pF
C
o(tr)
1200 pF
t
d(on)
22 ns
t
r
25 ns
t
d(off)
86 ns
t
f
11 ns
Q
g(on)
82 nC
Q
gs
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 36A 25 nC
Q
gd
25 nC
R
thJC
3.5 C/W
R
thCS
0.50 C/W
Resistive Switching Times
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 36A
R
G
= 5 (External)
Effective Output Capacitance
Energy related
Time related
V
GS
= 0V
V
DS
= 0.8 • V
DSS
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experi-
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
