OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

BUK127-50DL,115

P1-P3P4-P6P7-P9P10-P11
Philips Semiconductors Product specification
PowerMOS transistor BUK127-50DL
Logic level TOPFET
OVERLOAD PROTECTION CHARACTERISTICS
TOPFET switches off to protect itself when one of the overload thresholds is exceeded.
It remains latched off until reset by the input.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Overload protection -40˚C ≤ T
j
≤ 150˚C
I
D
Drain current limiting V
IS
= 5 V 0.8 1.3 1.7 A
V
IS
= 4.5 V 0.7 - - A
V
IS
= 4 V to 5.5 V 0.6 - 1.8 A
Short circuit load protection V
IS
= 5 V
P
D(TO)
Overload power threshold for protection to operate - 17 - W
T
DSC
Characteristic time which determines trip time
1
- 1.6 - ms
Overtemperature protection from I
D
≥ 280 mA or V
DS
≥ 100 mV
T
j(TO)
Threshold junction temperature V
IS
= 4 V to 5.5 V 150 165 - ˚C
SWITCHING CHARACTERISTICS
T
a
= 25˚C; resistive load R
L
= 50 Ω; adjust V
DD
to obtain I
D
= 250 mA; refer to test circuit and waveforms
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
t
d on
Turn-on delay time V
IS
: 0 V ⇒ 5 V - 5 12 µs
t
r
Rise time - 11 30 µs
t
d off
Turn-off delay time V
IS
: 5 V ⇒ 0 V - 25 65 µs
t
f
Fall time - 14 35 µs
REVERSE DIODE LIMITING VALUE
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
S
Continuous forward current T
mb
≤ 25 ˚C; V
IS
= 0 V - 2 A
REVERSE DIODE CHARACTERISTICS
Limits are for -40˚C ≤ T
mb
≤ 150˚C; typicals are for T
mb
= 25˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
SDO
Forward voltage I
S
= 2 A; V
IS
= 0 V; t
p
= 300 µs - 0.83 1.1 V
t
rr
Reverse recovery time not applicable
2
----
1 Trip time t
d sc
varies with overload dissipation P
D
according to the formula t
d sc
≈ T
DSC
/ [ P
D
/ P
D(TO)
- 1 ].
2 The reverse diode of this type is not intended for applications requiring fast reverse recovery.
October 2001 4 Rev 1.011
Philips Semiconductors Product specification
PowerMOS transistor BUK127-50DL
Logic level TOPFET
Fig.2. Normalised limiting power dissipation.
P
D
% = 100⋅P
D
/P
D
(25˚C) = f(T
mb
)
Fig.3. Continuous drain current.
I
D
= f(T
amb
); condition: V
IS
= 5 V
Fig.4. Typical on-state characteristics, T
j
= 25˚C.
I
D
= f(V
DS
); parameter V
IS
; t
p
= 300 µs
Fig.5. Normalised drain-source on-state resistance.
a = R
DS(ON)
/R
DS(ON)
25˚C = f(T
j
); I
D
= 100 mA; V
IS
= 4.4 V
Fig.6. Typical on-state resistance, T
j
= 25˚C.
R
DS(ON)
= f(V
IS
); conditions: I
D
= 100 mA, t
p
= 300 µs
Fig.7. Typical transfer characteristics, T
j
= 25˚C.
I
D
= f(V
IS
); conditions: V
DS
= 10 V, t
p
= 300 µs
0 20 40 60 80 100 120 140
Tmb / C
PD%
Normalised Power Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
0
0.5
1
1.5
2
-50
050
100 150
Normalised RDS(ON) = f(Tj)a
Tj / C
0
0
0.5
1.0
1.5
2.0
20 40 60 80 100 120 140
BUK127-50DLID / A
Tamb / C
CURRENT LIMITING OCCURS
WITHIN SHADED REGION
TYP.
012345678
0
50
100
150
200
250
300
350
RDS(ON) / mOhm BUK127-50DL
VIS / V
TYP.
MAX.
0
20
0
0.5
1
1.5
2
ID / A
VDS / V
BUK127-50DL
4 8 12 16 28 3224
VIS / V =
6
7
4
5
01234567
0
0.5
1
1.5
2
VIS / V
ID / A
BUK127-50DL
October 2001 5 Rev 1.011
Philips Semiconductors Product specification
PowerMOS transistor BUK127-50DL
Logic level TOPFET
Fig.8. Typical overtemperature protection threshold.
T
j(TO)
= f(V
IS
)
Fig.9. Typical DC input characteristics, T
j
= 25˚C.
I
IS
& I
ISL
= f(V
IS
); normal operation & protection latched
Fig.10. Typical DC input currents.
I
IS
& I
ISL
= f(T
j
); parameter V
IS
; normal & latched
Fig.11. Input threshold voltage.
V
IS(TO)
= f(T
j
); conditions: I
D
= 1 mA; V
DS
= 5 V
Fig.12. Typical input clamping characteristic.
I
I
= f(V
IS
); normal operation, T
j
= 25˚C.
Fig.13. Typical overload protection response time.
1 / t
dsc
= f(P
D
); V
IS
≥ 4 V, T
j
≤ 125˚C.
2345678
160
165
170
175
180
185
190
195
200
BUK127-50DL
Tj(TO) / C
VIS / V
DATA BELOW 4V IS FOR
INFORMATION ONLY.
ALL SPEC. VALUES ARE
AT 4V AND ABOVE.
FOR NORMAL OPERATION
-50 0 50 100 150
0
1
2
3
4
BUK127-50DL
VIS(TO) / V
Tj / C
TYP.
MIN.
MAX.
012345678
0
0.5
1
Vis / V
Ii / mA
Iisl
Iis
0246810
0
1
2
3
4
5
6
7
8
9
10
BUK127-50DL
II / mA
VIS / V
-50 0 50 100 150
0
100
200
300
400
500
BUK127-50DLIIS & IISL / uA
Tj / C
= IIS
= IISL
5V
5V
4V
3V
VIS / V =
0102030 50
0
200
400
600
800
1000
1200
1400
1600
1s / tdsc
Pd / W
BUK127-50DL
5 1525354045
October 2001 6 Rev 1.011
P1-P3P4-P6P7-P9P10-P11

BUK127-50DL,115

Mfr. #:
Buy BUK127-50DL,115
Manufacturer:
NXP Semiconductors
Description:
MOSFET N-CH 50V 0.7A SOT223
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet