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NSR01L30MXT5G

P1-P3P4-P4
© Semiconductor Components Industries, LLC, 2016
April, 2016 − Rev. 2
1 Publication Order Number:
NSR01L30MX/D
NSR01L30MX
Schottky Barrier Diode
These Schottky barrier diodes are optimized for low forward
voltage drop and low leakage current.
Features
• Very Low Forward Voltage Drop − 350 mV @ 1 mA
• Low Reverse Current − 0.2 mA @ 10 V
• 100 mA of Continuous Forward Current
• ESD Rating − Human Body Model: Class 3B
ESD Rating − Machine Model: Class C
• This is a Halide−Free Device
• This is a Pb−Free Device
Typical Applications
• LCD and Keypad Backlighting
• Camera Photo Flash
• Buck and Boost dc−dc Converters
• Reverse Voltage and Current Protection
• Clamping & Protection
Markets
• Mobile Handsets
• MP3 Players
• Digital Camera and Camcorders
• Notebook PCs & PDAs
• GPS
MAXIMUM RATINGS
Rating Symbol Value Unit
Reverse Voltage V
R
30 V
Forward Current (DC) I
F
100 mA
Forward Surge Current
(60 Hz @ 1 cycle)
I
FSM
2.0
A
ESD Rating: Human Body Model
Machine Model
ESD >8.0
>400
kV
V
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
30 V SCHOTTKY
BARRIER DIODE
1
CATHODE
2
ANODE
www.onsemi.com
Device Package Shipping†
ORDERING INFORMATION
NSR01L30MXT5G X3DFN2
(Pb−Free)
10000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
MARKING
DIAGRAM
X3DFN2
CASE 152AF
L = Specific Device Code
(Rotated 180°)
M = Date Code
PIN 1
M
L
NSR01L30MX
www.onsemi.com
2
THERMAL CHARACTERISTICS
Characteristic Symbol Min Typ Max Unit
Thermal Resistance
Junction−to−Ambient (Note 1)
Total Power Dissipation @ T
A
= 25°C
R
q
JA
P
D
695
180
°C/W
mW
Storage Temperature Range T
stg
−55 to +150 °C
Junction Temperature T
J
+150 °C
1. Mounted onto a 4 in square FR−4 board 100 mm sq. 2 oz. Cu 0.06” thick single−sided. Operating to steady state.
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
Reverse Leakage
(V
R
= 10 V)
(V
R
= 30 V)
I
R
0.2
0.5
mA
Forward Voltage
(I
F
= 1 mA)
(I
F
= 10 mA)
V
F
0.35
0.46
V
Total Capacitance
(V
R
= 5.0 V, f = 1 MHz)
CT
0.8 pF
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
NSR01L30MX
www.onsemi.com
3
TYPICAL CHARACTERISTICS
Figure 1. Forward Voltage Figure 2. Leakage Current
V
F
, FORWARD VOLTAGE (V) V
R
, REVERSE VOLTAGE (V)
0.1
1
10
100
30252015105
0
1000
Figure 3. Total Capacitance
V
R
, REVERSE VOLTAGE (V)
2520151050
I
F
, FORWARD CURRENT (mA)
I
r
, REVERSE CURRENT (mA)
C
T
, TOTAL CAPACITANCE (pF)
150°C
125°C
−55°C
75°C
−25°C
150°C
125°C
−25°C
75°C
25°C
30
T
A
= 25°C
2.5
0.60.50.40.30.10 0.2 0.7 0.8 0.9
100
10
1
0.1
0.01
0.001
0.0001
2
1.5
1
0.5
0
25°C
P1-P3P4-P4

NSR01L30MXT5G

Mfr. #:
Buy NSR01L30MXT5G
Manufacturer:
ON Semiconductor
Description:
Schottky Diodes & Rectifiers 30V LOW IR SCHOTTKY DIODE
Lifecycle:
New from this manufacturer.
Delivery:
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