IPB120N10S403ATMA1

P1-P3 P4-P6 P7-P9

IPB120N10S4-03

IPI120N10S4-03, IPP120N10S4-03

OptiMOS

®

-T2 Power-Transistor

Features

• N-channel - Normal Level - Enhancement mode

• AEC Q101 qualified

• MSL1 up to 260°C peak reflow

• 175°C operating temperature

• Green Product (RoHS compliant)

• 100% Avalanche tested

Maximum ratings, at T

j

=25 °C, unless otherwise specified

Parameter Symbol Conditions Unit

Continuous drain current

I

D

T

C

=25°C, V

GS

=10V

1)

120 A

T

C

=100°C, V

GS

=10V

2)

120

Pulsed drain current

2)

I

D,pulse

T

C

=25°C

480

Avalanche energy, single pulse

2)

E

AS

I

D

=60A

770 mJ

Avalanche current, single pulse

I

AS

-

120 A

Gate source voltage

V

GS

- ±20 V

Power dissipation

P

tot

T

C

=25°C

250 W

Operating and storage temperature

T

j

, T

stg

- -55 ... +175 °C

Value

V

DS

100 V

R

DS(on),max

(SMD version) 3.5

mW

I

D

120 A

Product Summary

Type Package Marking

IPB120N10S4-03 PG-TO263-3-2 4N1003

IPI120N10S4-03 PG-TO262-3-1 4N1003

IPP120N10S4-03 PG-TO220-3-1 4N1003

PG

-

TO220

-

3

-

1

PG

-

TO262

-

3

-

1

PG

-

TO263

-

3

-

2

Rev. 1.0

page 1 2014-06-30

IPB120N10S4-03

IPI120N10S4-03, IPP120N10S4-03

Parameter Symbol Conditions Unit

min. typ. max.

Thermal characteristics

2)

Thermal resistance, junction - case

R

thJC

- - - 0.6 K/W

Thermal resistance, junction -

ambient, leaded

R

thJA

- - - 62

SMD version, device on PCB

R

thJA

minimal footprint - - 62

6 cm

2

cooling area

3)

- - 40

Electrical characteristics, at T

j

=25 °C, unless otherwise specified

Static characteristics

Drain-source breakdown voltage

V

(BR)DSS

V

GS

=0V, I

D

= 1mA

100 - - V

Gate threshold voltage

V

GS(th)

V

DS

=V

GS

, I

D

=180µA

2.0 2.7 3.5

Zero gate voltage drain current

I

DSS

V

DS

=100V, V

GS

=0V

- 0.1 1 µA

V

DS

=100V, V

GS

=0V,

T

j

=125°C

2)

- 10 100

Gate-source leakage current

I

GSS

V

GS

=20V, V

DS

=0V

- - 100 nA

Drain-source on-state resistance

R

DS(on)

V

GS

=10V, I

D

=100A

- 3.4 3.9

mW

V

GS

=10V, I

D

=100A,

SMD version

- 3.0 3.5

Values

Rev. 1.0

page 2 2014-06-30

IPB120N10S4-03

IPI120N10S4-03, IPP120N10S4-03

Parameter Symbol Conditions Unit

min. typ. max.

Dynamic characteristics

2)

Input capacitance

C

iss

- 7780 10120 pF

Output capacitance

C

oss

- 2460 3200

Reverse transfer capacitance

C

rss

- 150 300

Turn-on delay time

t

d(on)

- 20 - ns

Rise time

t

r

- 10 -

Turn-off delay time

t

d(off)

- 45 -

Fall time

t

f

- 40 -

Gate Charge Characteristics

2)

Gate to source charge

Q

gs

- 36 47 nC

Gate to drain charge

Q

gd

- 21 42

Gate charge total

Q

g

- 108 140

Gate plateau voltage

V

plateau

- 4.7 - V

Reverse Diode

Diode continous forward current

2)

I

S

- - 120 A

Diode pulse current

2)

I

S,pulse

- - 480

Diode forward voltage

V

SD

V

GS

=0V, I

F

=100A,

T

j

=25°C

- 1.0 1.3 V

Reverse recovery time

2)

t

rr

V

R

=50V, I

F

=50A,

di

F

/dt=100A/µs

- 80 - ns

Reverse recovery charge

2)

Q

rr

- 170 - nC

Values

V

GS

=0V, V

DS

=25V,

f=1MHz

V

DD

=50V, V

GS

=10V,

I

D

=120A, R

G

=3.5W

V

DD

=80V, I

D

=120A,

V

GS

=0 to 10V

3)

Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm

2

(one layer, 70 µm thick) copper area for drain

connection. PCB is vertical in still air.

1)

Current is limited by bondwire; with an R

thJC

= 0.6K/W the chip is able to carry 186A at 25°C.

T

C

=25°C

2)

Specified by design. Not subject to production test.

Rev. 1.0

page 3 2014-06-30

P1-P3 P4-P6 P7-P9

IPB120N10S403ATMA1

Mfr. #:

Buy IPB120N10S403ATMA1

Manufacturer:

Infineon Technologies

Description:

MOSFET N-CHANNEL 100+

Lifecycle:

New from this manufacturer.

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