MSKD200_MSAD200_MSCD200 - Rev 1 www.microsemi.com
Dec, 2009 1/3
MSKD200 ; MSAD200 ; MSCD200
Module Type
TYPE VRRM VRSM
MSKD200-08
MSKD200-12
MSKD200-16
MSKD200-18
MSAD200-08
MSAD200-12
MSAD200-16
MSAD200-18
MSCD200-08
MSCD200-12
MSCD200-16
MSCD200-18
800V
1200V
1600V
1800V
900V
1300V
1700V
1900V
Maximum Ratings
Symbol Conditions Values Units
IFAV
Tc=100℃
200 A
IFSM
t=10mS Tv
=45℃
6800 A
i
2
t
t=10mS Tv
=45℃
231200
A
2
s
Visol
a.c.50Hz;r.m.s.;1min 3000 V
Tvj
-40 to 150
℃
Tstg
-40 to 125
℃
Mt To terminals(M6) 5±15% Nm
Ms To heatsink(M6) 5±15% Nm
Weight Module 160 g
Thermal Characteristics
Symbol Conditions Values Units
Rth(j-c)
Per diode 0.21
℃
W
Rth(c-s)
Module 0.05
℃
W
Electrical Characteristics
Circuit
Applications
y Non-controllable rectifiers for AC/AC
converters
y Line rectifiers for transistorized AC motor
controllers
y Field supply for DC motors
Features
y Blocking voltage: 800 to 1800V
y Heat transfer through aluminum oxide ceramic
isolated metal baseplate
y Glass passivated chip
Glass Passivated Rectifier
Diode Modules
V
RRM 800 to 1800V
IFAV 200 Amp
Symbol Conditions Values Units
VFM
T=25℃ IFM =300A
1.3 V
IRD
T
vj=TvjM VRD=VRRM ≤9 mA
