Radar Pulsed Power Transistor
115W, 2.7-2.9 GHz, 200µs Pulse, 10% Duty
M/A-COM Products
PRELIMINARY, 10 Aug 07
MAPR-002731-115M00
1
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changes to the product(s) or information contained herein without notice.
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
Features
• NPN silicon microwave power transistors
• Common base configuration
• Broadband Class C operation
• High efficiency inter-digitized geometry
• Diffused emitter ballasting resistors
• Gold metallization system
• Internal input and output impedance matching
• Hermetic metal/ceramic package
• RoHS compliant
• Device marked as PR2731-115M
Electrical Specifications: T
C
= 25 ± 5°C (Room Ambient )
Parameter Test Conditions Frequency Symbol Min Max Units
Collector-Emitter Breakdown Voltage I
C
= 40mA BV
CES
65 - V
Collector-Emitter Leakage Current V
CE
= 36V I
CES
- 7.5 mA
Thermal Resistance Vcc = 36V, Pin = 20W F = 2.7, 2.9, 3.1 GHz
R
TH(JC)
- TBD °C/W
Output Power Vcc = 36V, Pin = 20W F = 2.7, 2.9, 3.1 GHz
P
OUT
115 - W
Power Gain Vcc = 36V, Pin = 20W F = 2.7, 2.9, 3.1 GHz
G
P
7.6 - dB
Gain Flatness Vcc = 36V, Pin = 20W F = 2.7, 2.9, 3.1 GHz
ΔG
- 1.0 dB
Collector Efficiency Vcc = 36V, Pin = 20W F = 2.7, 2.9, 3.1 GHz
η
C
38 - %
Pulse Droop Vcc = 36V, Pin = 20W F = 2.7, 2.9, 3.1 GHz
Droop - 0.5 dB
Input Return Loss Vcc = 36V, Pin = 20W F = 2.7, 2.9, 3.1 GHz
RL - -10 dB
Load Mismatch Tolerance Vcc = 36V, Pin = 20W F = 2.7, 2.9, 3.1 GHz
VSWR-T - 2:1 -
Load Mismatch Stability Vcc = 36V, Pin = 20W F = 2.7, 2.9, 3.1 GHz
VSWR-S - 1.5:1 -
Absolute Maximum Ratings at 25°C
Parameter Symbol Rating Units
Collector-Emitter Voltage V
CES
65 V
Emitter-Base Voltage V
EBO
3.0 V
Collector Current (Peak) I
C
TBD A
Power Dissipation @ +25°C P
TOT
TBD W
Storage Temperature T
STG
-65 to +200 °C
Junction Temperature T
J
200 °C
Outline Drawing
