© Semiconductor Components Industries, LLC, 2014
March, 2014− Rev. 11
1 Publication Order Number:
BAS16WT1/D
BAS16WT1G
Silicon Switching Diode
Features
• S and NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (T
A
= 25°C)
Rating
Symbol Value Unit
Continuous Reverse Voltage V
R
100 V
Recurrent Peak Forward Current I
R
200 mA
Peak Forward Surge Current
Pulse Width = 10 ms
I
FM(surge)
500 mA
Total Power Dissipation,
One Diode Loaded T
A
= 25°C
Derate above 25°C
Mounted on a Ceramic Substrate
(10 x 8 x 0.6 mm)
P
D
200
1.6
mW
mW/°C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
−55 to
+150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance,
Junction−to−Ambient
One Diode Loaded
Mounted on a Ceramic Substrate
(10 x 8 x 0.6 mm)
R
q
JA
625 °C/W
http://onsemi.com
Device Package Shipping
†
ORDERING INFORMATION
SC−70
CASE 419
STYLE 2
MARKING
DIAGRAM
BAS16WT1G SC−70
(Pb−Free)
3000 / Tape & Ree
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
3
CATHODE
1
ANODE
A6 MG
G
1
A6 = Specific Device Code
M = Date Code
G = Pb−Free Package
(*Note: Microdot may be in either location)
SBAS16WT1G SC−70
(Pb−Free)
3000 / Tape & Ree
NSVBAS16WT3G SC−70
(Pb−Free)
10000 / Tape &
Reel