BU807

BU806

BU807

MEDIUM VOLTAGE NPN FAST SWITCHING

DARLINGTON TRANSISTORS

■ STMicroelectronics PREFERRED

SALESTYPES

■ NPN DARLINGTONS

■ LOW BASE-DRIVE REQUIREMENTS

■ INTEGRATED ANTIPARALLEL

COLLECTOR-EMITTER DIODE

APPLICATION

■ HORIZONTAL DEFLECTION FOR

MONOCHROME TVs

DESCRIPTION

The devices are silicon Epitaxial Planar NPN

power transistors in Darlington configuration with

integrated base-emitter speed-up diode, mounted

in TO-220 plastic package.

They can be used in horizontal output stages of

110

o

CRT video displays.

INTERNAL SCHEMATIC DIAGRAM

October 2003

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

BU806 BU807

V

CBO

Collector-base Voltage (I

E

= 0) 400 330 V

V

CEV

Collector-emitter Voltage (V

BE

= -6V) 400 330 V

V

CEO

Collector-emitter Voltage (I

B

= 0) 200 150 V

V

EBO

Emitter-Base Voltage (I

C

= 0) 6 V

I

C

Collector Current 8 A

I

CM

Collector Peak Current 15 A

I

DM

Damper Diode Peak Forward Current 10 A

I

B

Base Current 2 A

P

tot

Total Power Dissipation at T

case

< 25

o

C

60 W

T

stg

Storage Temperature -65 to 150

o

C

T

j

Max Operating Junction Temperature 150

o

C

1

2

3

TO-220

®

1/4

THERMAL DATA

R

thj-case

R

thj-amb

Thermal Resistance Junction-case Max

Thermal Resistance Junction-ambient Max

2.08

70

o

C/W

o

C/W

ELECTRICAL CHARACTERISTICS (T

case

= 25

o

C unless otherwise specified)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

CES

Collector Cut-off

Current (V

BE

= 0)

for BU807 V

CE

= 330 V

for BU806 V

CE

= 400 V

100

100

µA

µA

I

CEV

Collector Cut-off

Current (V

BE

= -6V)

for BU807 V

CE

= 330 V

for BU806 V

CE

= 400 V

100

100

µA

µA

I

EBO

Emitter Cut-off

Current (I

C

= 0)

V

EB

= 6 V 3.5 mA

V

CEO(sus)

∗ Collector-Emitter

Sustaining Voltage

(I

B

= 0)

I

C

= 100 mA for BU807

for BU806

150

200

V

V

V

CE(sat)

∗ Collector-Emitter

Saturation Voltage

I

C

= 5A I

B

= 50mA 1.5 V

V

BE(sat)

∗ Base-Emitter

Saturation Voltage

I

C

= 5A I

B

= 50mA 2.4 V

V

F

∗ Damper Diode

Forward Voltage

I

F

= 4A 2 V

t

on

t

off

t

s

t

f

RESISTIVE LOAD

Turn-on Time

Turn-off Time

Storage Time

Fall Time

I

C

= 5 A V

CC

= 100 V

I

B1

= 50 mA I

B2

= -500 mA

0.35

0.4

0.55

0.2

1

µs

µs

µs

µs

∗ Pulsed: Pulse duration = 300 µs, duty cycle < 1.5 %

BU806 / BU807

2/4

DIM.

mm inch

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.40 4.60 0.173 0.181

C 1.23 1.32 0.048 0.052

D 2.40 2.72 0.094 0.107

E 0.49 0.70 0.019 0.027

F 0.61 0.88 0.024 0.034

F1 1.14 1.70 0.044 0.067

F2 1.14 1.70 0.044 0.067

G 4.95 5.15 0.194 0.202

G1 2.40 2.70 0.094 0.106

H2 10.00 10.40 0.394 0.409

L2 16.40 0.645

L4 13.00 14.00 0.511 0.551

L5 2.65 2.95 0.104 0.116

L6 15.25 15.75 0.600 0.620

L7 6.20 6.60 0.244 0.260

L9 3.50 3.93 0.137 0.154

M 2.60 0.102

DIA. 3.75 3.85 0.147 0.151

P011CI

TO-220 MECHANICAL DATA

BU806 / BU807

3/4

BU807

Mfr. #:

Manufacturer:

ON Semiconductor / Fairchild

Description:

Darlington Transistors NPN Epitaxial Sil Darl

Lifecycle:

New from this manufacturer.

Delivery:

DHL FedEx Ups TNT EMS

Payment:

T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet

BU807