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NSVDTA114EET1G

P1-P3P4-P6P7-P9P10-P12
© Semiconductor Components Industries, LLC, 2000
July, 2018 − Rev. 9
1 Publication Order Number:
DTA114E/D
MUN2111, MMUN2111L,
MUN5111, DTA114EE,
DTA114EM3, NSBA114EF3
Digital Transistors (BRT)
R1 = 10 kW, R2 = 10 kW
PNP Transistors with Monolithic Bias
Resistor Network
This series of digital transistors is designed to replace a single
device and its external resistor bias network. The Bias Resistor
Transistor (BRT) contains a single transistor with a monolithic bias
network consisting of two resistors; a series base resistor and a base−
emitter resistor. The BRT eliminates these individual components by
integrating them into a single device. The use of a BRT can reduce
both system cost and board space.
Features
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• S and NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101 Qualified
and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (T
A
= 25°C)
Rating
Symbol Max Unit
Collector−Base Voltage V
CBO
50 Vdc
Collector−Emitter Voltage V
CEO
50 Vdc
Collector Current − Continuous I
C
100 mAdc
Input Forward Voltage V
IN(fwd)
40 Vdc
Input Reverse Voltage V
IN(rev)
10 Vdc
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
PIN 3
COLLECTOR
(OUTPUT)
PIN 2
EMITTER
(GROUND)
PIN 1
BASE
(INPUT)
R1
R2
See detailed ordering, marking, and shipping information in
the package dimensions section on page 2 of this data sheet
.
ORDERING INFORMATION
www.onsemi.com
SC−75
CASE 463
STYLE 1
MARKING DIAGRAMS
XXX = Specific Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending up-
on manufacturing location.
SC−59
CASE 318D
STYLE 1
SOT−23
CASE 318
STYLE 6
SC−70/SOT−323
CASE 419
STYLE 3
SOT−723
CASE 631AA
STYLE 1
SOT−1123
CASE 524AA
STYLE 1
XX MG
G
1
1
XXX MG
G
XX MG
G
1
XX M
1
X M
XX M
1
1
PIN CONNECTIONS
MUN2111, MMUN2111L, MUN5111, DTA114EE, DTA114EM3, NSBA114EF3
www.onsemi.com
2
Table 1. ORDERING INFORMATION
Device Part Marking Package Shipping
†
MUN2111T1G, SMUN2111T1G 6A SC−59
(Pb−Free)
3000 / Tape & Reel
SMUN2111T3G 6A SC−59
(Pb−Free)
10000 / Tape & Reel
MMUN2111LT1G, SMMUN2111LT1G A6A SOT−23
(Pb−Free)
3000 / Tape & Reel
MMUN2111LT3G, SMMUN2111LT3G A6A SOT−23
(Pb−Free)
10000 / Tape & Reel
MUN5111T1G, SMUN5111T1G 6A SC−70/SOT−323
(Pb−Free)
3000 / Tape & Reel
DTA114EET1G, NSVDTA114EET1G 6A SC−75
(Pb−Free)
3000 / Tape & Reel
DTA114EM3T5G, NSVDTA114EM3T5G 6A SOT−723
(Pb−Free)
8000 / Tape & Reel
NSBA114EF3T5G F SOT−1123
(Pb−Free)
8000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
Figure 1. Derating Curve
AMBIENT TEMPERATURE (°C)
1251007550250−25−50
0
50
100
150
200
250
300
P
D
, POWER DISSIPATION (mW)
150
(1) (2) (3) (4) (5)
(1) SC−75 and SC−70/SOT−323; Minimum Pad
(2) SC−59; Minimum Pad
(3) SOT−23; Minimum Pad
(4) SOT−1123; 100 mm
2
, 1 oz. copper trace
(5) SOT−723; Minimum Pad
MUN2111, MMUN2111L, MUN5111, DTA114EE, DTA114EM3, NSBA114EF3
www.onsemi.com
3
Table 2. THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
THERMAL CHARACTERISTICS (SC−59) (MUN2111)
Total Device Dissipation
T
A
= 25°C (Note 1)
(Note 2)
Derate above 25°C (Note 1)
(Note 2)
P
D
230
338
1.8
2.7
mW
mW/°C
Thermal Resistance, (Note 1)
Junction to Ambient (Note 2)
R
q
JA
540
370
°C/W
Thermal Resistance, (Note 1)
Junction to Lead (Note 2)
R
q
JL
264
287
°C/W
Junction and Storage Temperature Range T
J
, T
stg
−55 to +150 °C
THERMAL CHARACTERISTICS (SOT−23) (MMUN2111L)
Total Device Dissipation
T
A
= 25°C (Note 1)
(Note 2)
Derate above 25°C (Note 1)
(Note 2)
P
D
246
400
2.0
3.2
mW
mW/°C
Thermal Resistance, (Note 1)
Junction to Ambient (Note 2)
R
q
JA
508
311
°C/W
Thermal Resistance, (Note 1)
Junction to Lead (Note 2)
R
q
JL
174
208
°C/W
Junction and Storage Temperature Range T
J
, T
stg
−55 to +150 °C
THERMAL CHARACTERISTICS (SC−70/SOT−323) (MUN5111)
Total Device Dissipation
T
A
= 25°C (Note 1)
(Note 2)
Derate above 25°C (Note 1)
(Note 2)
P
D
202
310
1.6
2.5
mW
mW/°C
Thermal Resistance, (Note 1)
Junction to Ambient (Note 2)
R
q
JA
618
403
°C/W
Thermal Resistance, (Note 1)
Junction to Lead (Note 2)
R
q
JL
280
332
°C/W
Junction and Storage Temperature Range T
J
, T
stg
−55 to +150 °C
THERMAL CHARACTERISTICS (SC−75) (DTA114EE)
Total Device Dissipation
T
A
= 25°C (Note 1)
(Note 2)
Derate above 25°C (Note 1)
(Note 2)
P
D
200
300
1.6
2.4
mW
mW/°C
Thermal Resistance, (Note 1)
Junction to Ambient (Note 2)
R
q
JA
600
400
°C/W
Junction and Storage Temperature Range T
J
, T
stg
−55 to +150 °C
THERMAL CHARACTERISTICS (SOT−723) (DTA114EM3)
Total Device Dissipation
T
A
= 25°C (Note 1)
(Note 2)
Derate above 25°C (Note 1)
(Note 2)
P
D
260
600
2.0
4.8
mW
mW/°C
Thermal Resistance, (Note 1)
Junction to Ambient (Note 2)
R
q
JA
480
205
°C/W
Junction and Storage Temperature Range T
J
, T
stg
−55 to +150 °C
1. FR−4 @ Minimum Pad.
2. FR−4 @ 1.0 x 1.0 Inch Pad.
3. FR−4 @ 100 mm
2
, 1 oz. copper traces, still air.
4. FR−4 @ 500 mm
2
, 1 oz. copper traces, still air.
P1-P3P4-P6P7-P9P10-P12

NSVDTA114EET1G

Mfr. #:
Buy NSVDTA114EET1G
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - Pre-Biased SS SC75 BR XSTR PNP 50V
Lifecycle:
New from this manufacturer.
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