SQM200N04-1m7L_GE3 Datasheet SQM200N04-1m7L_GE3 | P1-P3

SQM200N04-1m7L

www.vishay.com

Vishay Siliconix

S15-1874-Rev. B, 10-Aug-15

1

Document Number: 67058

For technical questions, contact: automostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Automotive N-Channel 40 V (D-S) 175 °C MOSFET

FEATURES

• TrenchFET

®

power MOSFET

• Package with low thermal resistance

• 100 % R

g

and UIS tested

• AEC-Q101 qualified

d

• Material categorization:

for definitions of compliance please see

www.vishay.com/doc?99912

Notes

a. Package limited.

b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.

c. When mounted on 1" square PCB (FR4 material).

d. Parametric verification ongoing.

PRODUCT SUMMARY

V

DS

(V) 40

R

DS(on)

(Ω) at V

GS

= 10 V 0.0017

R

DS(on)

(Ω) at V

GS

= 4.5 V 0.0020

I

D

(A) 200

Configuration Single

Package TO-263-7L

TO-263 7-Lead

Top View

G

D

S

G

D

S

D

G

SN-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (T

C

= 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V

DS

40

V

Gate-Source Voltage V

GS

± 20

Continuous Drain Current

T

C

= 25 °C

a

I

D

200

A

T

C

= 125 °C 193

Continuous Source Current (Diode Conduction)

a

I

S

200

Pulsed Drain Current

b

I

DM

600

Single Pulse Avalanche Current

L = 0.1 mH

I

AS

95

Single Pulse Avalanche Energy E

AS

451 mJ

Maximum Power Dissipation

b

T

C

= 25 °C

P

D

375

W

T

C

= 125 °C 125

Operating Junction and Storage Temperature Range T

J

, T

stg

-55 to +175 °C

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL LIMIT UNIT

Junction-to-Ambient PCB Mount

c

R

thJA

40

°C/W

Junction-to-Case (Drain) R

thJC

0.4

SQM200N04-1m7L

www.vishay.com

Vishay Siliconix

S15-1874-Rev. B, 10-Aug-15

2

Document Number: 67058

For technical questions, contact: automostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Notes

a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.

b. Guaranteed by design, not subject to production testing.

c. Independent of operating temperature.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

SPECIFICATIONS (T

C

= 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage V

DS

V

GS

= 0 V, I

D

= 250 μA 40 - -

V

Gate-Source Threshold Voltage V

GS(th)

V

DS

= V

GS

, I

D

= 250 μA 1.5 2.0 2.5

Gate-Source Leakage I

GSS

V

DS

= 0 V, V

GS

= ± 20 V - - ± 100 nA

Zero Gate Voltage Drain Current I

DSS

V

GS

= 0 V V

DS

= 40 V - - 1

μA V

GS

= 0 V V

DS

= 40 V, T

J

= 125 °C - - 50

V

GS

= 0 V V

DS

= 40 V, T

J

= 175 °C - - 250

On-State Drain Current

a

I

D(on)

V

GS

= 10 V V

DS

≥ 5 V 200 - - A

Drain-Source On-State Resistance

a

R

DS(on)

V

GS

= 10 V I

D

= 30 A - 0.0012 0.0017

Ω

V

GS

= 10 V I

D

= 30 A, T

J

= 125 °C - - 0.0028

V

GS

= 10 V I

D

= 30 A, T

J

= 175 °C - - 0.0034

V

GS

= 4.5 V I

D

= 20 A - 0.0014 0.0020

Forward Transconductance

b

g

fs

V

DS

= 15 V, I

D

= 30 A - 181 - S

Dynamic

b

Input Capacitance C

iss

V

GS

= 0 V V

DS

= 20 V, f = 1 MHz

- 8934 11 168

pF Output Capacitance C

oss

- 1592 1990

Reverse Transfer Capacitance C

rss

- 928 1160

Total Gate Charge

c

Q

g

V

GS

= 10 V V

DS

= 20 V, I

D

= 20 A

- 194 291

nC Gate-Source Charge

c

Q

gs

-25-

Gate-Drain Charge

c

Q

gd

-40-

Gate Resistance R

g

f = 1 MHz 0.25 0.8 1.8 Ω

Turn-On Delay Time

c

t

d(on)

V

DD

= 20 V, R

L

= 1 Ω

I

D

≅ 20 A, V

GEN

= 10 V, R

g

= 1 Ω

-2233

ns

Rise Time

c

t

r

-1726

Turn-Off Delay Time

c

t

d(off)

-70105

Fall Time

c

t

f

-1624

Source-Drain Diode Ratings and Characteristics

b

Pulsed Current

a

I

SM

--600A

Forward Voltage V

SD

I

F

= 60 A, V

GS

= 0 V - 0.8 1.5 V

SQM200N04-1m7L

www.vishay.com

Vishay Siliconix

S15-1874-Rev. B, 10-Aug-15

3

Document Number: 67058

For technical questions, contact: automostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TYPICAL CHARACTERISTICS (T

A

= 25 °C, unless otherwise noted)

Output Characteristics

Transfer Characteristics

On-Resistance vs. Drain Current

Transfer Characteristics

Transconductance

Capacitance

0

60

120

180

240

0 2 4 6 8 10

I

D

- Drain Current (A)

V

DS

- Drain-to-Source Voltage (V)

V

GS

= 10 V thru 6 V

V

GS

= 3 V

V

GS

= 4 V

V

GS

= 5 V

0.0

0.4

0.8

1.2

1.6

2.0

0 1 2 3 4 5

I

D

- Drain Current (A)

V

GS

- Gate-to-Source Voltage (V)

T

C

= 25 °C

T

C

= -55 °C

T

C

= 125 °C

0.000

0.001

0.002

0.003

0.004

0.005

0 20406080100120

R

DS(on)

-On-Resistance (Ω)

I

D

-Drain Current (A)

V

GS

= 4.5 V

V

GS

= 10 V

0

30

60

90

120

150

0 1 2 3 4 5

I

D

- Drain Current (A)

V

GS

- Gate-to-Source Voltage (V)

T

C

= 25 °C

T

C

= -55 °C

T

C

= 125 °C

0

70

140

210

280

350

0 14 28 42 56 70

g

fs

-Transconductance (S)

I

D

- Drain Current (A)

T

C

= 125 °C

T

C

= -55 °C

T

C

= 25 °C

0

3000

6000

9000

12 000

15 000

0 5 10 15 20 25 30 35 40

C - Capacitance (pF)

V

DS

-Drain-to-Source Voltage (V)

C

iss

C

oss

C

rss

SQM200N04-1m7L_GE3

SQM200N04-1m7L_GE3

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