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PSMN4R3-100PS,127
P1-P3
P4-P6
P7-P9
P10-P12
P13-P15
P16-P16
PSMN4R3-100PS
All information pr
ovided in this d
ocument is su
bject to legal
disclaimers.
© NXP B.V
. 2011. All rights reserved.
Product data sheet
Rev
. 1 — 27 October 201
1
9 of 15
NXP Semiconductors
PSMN4R3-100PS
N-channel 10
0 V 4.3 m
Ω
st
andard level MOSFET in TO-220
Fig 13.
Drain-source on-state
resistance as a function
of drain current; typical values
Fig 14.
Gate charge waveform definitions
Fig 15.
Gate-source voltage as a fun
ction of gate
charge; typical values
Fig
16.
Input, output a
nd reverse trans
fer capacitances
as a function of d
rain-source voltage; ty
pical
values
003aag795
3
4
5
6
7
02
0
4
0
6
0
8
0
I
D
(A)
R
DS
on
(m
Ω
)
6.
0
5.
5
8.
0
V
GS
(V) =
10.
0
003aaa508
V
GS
V
GS(th)
Q
GS1
Q
GS2
Q
GD
V
DS
Q
G(tot)
I
D
Q
GS
V
GS(pl)
003aaf729
0
2
4
6
8
10
0
50
100
150
200
Q
G
(nC)
V
GS
(V)
V
DS
= 20V
80V
50V
003aaf730
10
10
2
10
3
10
4
10
5
10
-1
1
10
10
2
V
DS
(V)
C
(pF)
C
iss
C
rss
C
oss
PSMN4R3-100PS
All information pr
ovided in this d
ocument is su
bject to legal
disclaimers.
© NXP B.V
. 2011. All rights reserved.
Product data sheet
Rev
. 1 — 27 October 201
1
10 of 15
NXP Semiconductors
PSMN4R3-100PS
N-channel 10
0 V 4.3 m
Ω
st
andard level MOSFET in TO-220
Fig 17.
Sou
rce (diode forward) current as a func
tion of
source-drain (diode forward)
voltage; typical values
003aaf731
0
20
40
60
80
100
0
0.3
0.6
0.9
1.2
V
SD
(V)
I
S
(A)
T
j
= 25
°
C
T
j
= 175
°
C
PSMN4R3-100PS
All information pr
ovided in this d
ocument is su
bject to legal
disclaimers.
© NXP B.V
. 2011. All rights reserved.
Product data sheet
Rev
. 1 — 27 October 201
1
1
1 of 15
NXP Semiconductors
PSMN4R3-100PS
N-channel 10
0 V 4.3 m
Ω
st
andard level MOSFET in TO-220
7.
Package outline
Fig 18.
Package ou
tline SOT78 (TO-220AB)
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
JEITA
SOT78
SC-46
3-lead TO-220AB
SOT78
08-04-23
08-06-13
Notes
1. Lead shoulder designs may vary.
2. Dimension includes excess dambar.
UNIT
A
mm
4.7
4.1
1.40
1.25
0.9
0.6
0.7
0.4
16.0
15.2
6.6
5.9
10.3
9.7
15.0
12.8
3.30
2.79
3.8
3.5
A
1
DIMENSIONS (mm are the original dimensions)
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB
0
5
10 mm
scale
b
b
1
(2)
1.6
1.0
c
D
1.3
1.0
b
2
(2)
D
1
E
e
2.54
L
L
1
(1)
L
2
(1)
max.
3.0
p
q
3.0
2.7
Q
2.6
2.2
D
D
1
q
p
L
12
3
L
1
(1)
b
1
(2)
(3
×
)
b
2
(2)
(2
×
)
e
e
b(3
×
)
A
E
A
1
c
Q
L
2
(1)
mounting
base
P1-P3
P4-P6
P7-P9
P10-P12
P13-P15
P16-P16
PSMN4R3-100PS,127
Mfr. #:
Buy PSMN4R3-100PS,127
Manufacturer:
Nexperia
Description:
MOSFET N-Ch 100V 4.3 mo std level moSFET
Lifecycle:
New from this manufacturer.
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PSMN4R3-100PS,127