RHP030N03
Transistors
Rev.A 3/3
0246810 1412
GATE-SOURCE VOLTAGE : V
GS
(V)
0
0.1
0.2
0.3
0.4
0.5
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
R
DS (on)
(Ω)
Fig.4 Static Drain-Source
On-State Resistance vs.
Gate-Source Voltage
Ta=25°C
Pulsed
1.5A
I
D
=3.0A
DRAIN CURRENT : I
D
(A)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
R
DS (on)
(Ω)
Fig.7 Static Drain-Source
On-State Resistance
vs. Drain Current ( Ι )
0.01 0.1 1 10
0.01
0.1
1
Ta= −25°C
Ta=25°C
Ta=75°C
Ta=125°C
V
GS
=10V
Pulsed
CHANNEL TEMPERATURE : Tch
(°C)
GATE THRESHOLD VOLTAGE : V
GS
(th)
(V)
Fig.9 Gate Threshold Voltage vs.
Channel Temperature
-50 -25 0 25 50 75 100 125 150
0
0.5
1
1.5
2
2.5
V
SD
=10V
I
D
=1mA
Pulsed
DRAIN CURRENT : I
D
(A)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
R
DS (on)
(Ω)
Fig.8 Static Drain-Source
On-State Resistance
vs. Drain Current ( ΙΙ )
0.01 0.1 1 10
0.01
0.1
1
Ta= −25°C
Ta=25°C
Ta=75°C
Ta=125°C
V
GS
=4V
Pulsed
zElectrical characteristics curves
DRAIN-SOURCE VOLTAGE : V
DS
(V)
1
10
100
1000
0.01 0.1 1 10010
CAPACITANCE : C (pF)
Fig.1 Typical Capacitance
vs. Drain-Source Voltage
Ciss
Coss
Crss
Ta=25°C
f=1MHz
V
GS
=0V
DRAIN CURRENT : I
D
(A)
0.01
1
10
100
1000
0.1 1 10
SWITCHING TIME : t (ns)
Fig.2 Switching Characteristics
Ta=25°C
V
DD
= 15V
V
GS
= 10V
R
G
=10Ω
Pulsed
tf
tr
td (off)
td (on)
GATE-SOURCE VOLTAGE : V
GS
(V)
0
1
0.1
0.01
10
1.50.5 1 2 2.5 3 3.5
DRAIN CURRENT : I
D
(A)
Fig.3 Typical Transfer Characteristics
V
DS
=10V
Pulsed
Ta=125°C
75°C
25°C
−25°C
0 0.2 0.4 0.6 0.8 1 1.2 1.4
SOURCE-DRAIN VOLTAGE : V
SD
(V)
0.001
0.1
0.01
1
10
REVERSE DRAIN CURRENT : I
DR
(A)
Fig.5 Reverse Drain Current vs.
Source-Drain Voltage ( Ι )
V
GS
=0V
Pulsed
Ta= −25°C
Ta=25°C
Ta=75°C
Ta=125°C
0 0.2 0.4 0.6 0.8 1 1.2
SOURCE-DRAIN VOLTAGE : V
SD
(V)
0.001
0.1
0.01
1
10
REVERSE DRAIN CURRENT : I
DR
(A)
Fig.6 Reverse Drain Current vs.
Source-Drain Voltage ( ΙΙ )
V
GS
=10V
0V
Ta=
25°C
Pulsed
