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HCPL2531SD

P1-P3P4-P6P7-P9
VO617C
www.vishay.com
Vishay Semiconductors
Rev. 1.2, 02-Aug-13
1
Document Number: 83463
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Low Input Current Optocoupler, Phototransistor Output,
High Reliability, 5300 V
RMS
DESCRIPTION
The 110 °C rated VO617C feature a high current transfer
ratio, low coupling capacitance and high isolation voltage.
These couplers have a GaAs infrared diode emitter, which
is optically coupled to a silicon planar phototransistor
detector, and is incorporated in a plastic DIP-4 package.
The coupling devices are designed for signal transmission
between two electrically separated circuits.
FEATURES
• Copper lead-frame
• Operating temperature from - 55 °C to + 110 °C
• Isolation test voltage, 5300 V
RMS
• High collector emitter voltage, V
CEO
= 80 V
• Low saturation voltage
• Fast switching times
• Low CTR degradation
• Low coupling capacitance
• End stackable, 0.100" (2.54 mm) spacing
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
•AC adapters
•SMPS
•PLC
• Factory automation
• Solar inverter
AGENCY APPROVALS
• UL1577, file no. E52744
• cUL tested to CSA 22.2 bulletin 5A
• DIN EN 60747-5-5 (VDE 0884), available with option 1
• FIMKO EN 60065 and EN60950-1, file no. FI 27409
• CQC GB8898-2001
Notes
• Additional options may be available, please contact the sales office.
(1)
T1 rotation in tape and reel packing.
E
CA
C
1
2
4
3
22647
ORDERING INFORMATION
VO617C-#X0##
PART NUMBER CTR
BIN
PACKAGE OPTION
AGENCY CERTIFIED/PACKAGE
CTR (%)
5 mA
UL, cUL, BSI, FIMKO, CQC 40 to 80 63 to 125 100 to 200 160 to 320
DIP-4 - VO617C-2 - -
SMD-4, option 9 - VO617C-2X009T - -
VDE, UL, cUL, BSI, FIMKO, CQC 40 to 80 63 to 125 100 to 200 160 to 320
DIP-4 - VO617C-2X001 VO617C-3X001 VO617C-4X001
DIP-4, 400 mil, option 6 VO617C-1X016 VO617C-2X016 VO617C-3X016 VO617C-4X016
SMD-4, option 7 - - VO617C-3X017T1
(1)
-
10.16 mm
Option 6
Option 7
> 8 mm
Option 9
> 8 mm
VO617C
www.vishay.com
Vishay Semiconductors
Rev. 1.2, 02-Aug-13
2
Document Number: 83463
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
(2)
Refer to wave profile for soldering conditions for through hole devices (DIP).
Fig. 1 - Total Power Dissipation vs. Ambient Temperature
Note
• Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
INPUT
Reverse voltage V
R
6V
Forward current I
F
60 mA
Forward surge current t
p
≤ 10 μs I
FSM
2.5 A
Power dissipation at 25 °C P
diss
70 mW
OUTPUT
Collector emitter voltage V
CEO
80 V
Emitter collector voltage V
ECO
7V
Collector current I
C
50 mA
t
p
≤ 1 ms 100 mA
Ouput power dissipation at 25 °C P
diss
150 mW
COUPLER
Isolation test voltage (RMS) t = 1 min V
ISO
5300 V
RMS
Total power dissipation P
tot
200 mW
Operation temperature T
amb
- 55 to + 110 °C
Storage temperature range T
stg
- 55 to + 150 °C
Junction temperature T
j
125 °C
Soldering temperature
(1)
2 mm from case, ≤ 10 s T
sld
260 °C
ELECTRICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
INPUT
Forward voltage I
F
= 60 mA V
F
1.1 1.6 V
Reverse current V
R
= 6 V I
R
0.01 10 μA
Junction capacitance V
R
= 0 V, f = 1 MHz C
j
9pF
OUTPUT
Collector emitter leakage current V
CE
= 10 V I
CEO
0.3 100 nA
Collector emitter capacitance V
CE
= 5 V, f = 1 MHz C
CE
2.8 pF
Collector emitter breakdown voltage I
C
= 100 μA BV
CEO
80 V
Emitter collector breakdown voltage I
E
= 10 μA BV
ECO
7V
COUPLER
Collector emitter saturation voltage I
F
= 10 mA, I
C
= 2.5 mA V
CEsat
0.25 0.4 V
Coupling capacitance f = 1 MHz C
IO
0.3 pF
Cut-off frequency I
F
= 10 mA, V
CC
= 5 V, R
L
= 100 Ω f
ctr
110 kHz
0
50
100
150
200
250
0 25 50 75 100 125
P
tot
- Total Power Di
ssipation (mW)
T
amb
- Ambient Temperature (°C)
Coupled device
Phototransistor
IR-diode
VO617C
www.vishay.com
Vishay Semiconductors
Rev. 1.2, 02-Aug-13
3
Document Number: 83463
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 2 - Test Circuit Fig. 3 - Test Circuit and Waveforms
Notes
• As per DIN EN 60747-5-5, § 7.4.3.8.2), this optocoupler is suitable for “safe electrical insulation” only within the safety ratings. Compliance
with the safety ratings shall be ensured by means of protective circuits.
(1)
Only for option 6.
CURRENT TRANSFER RATIO (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
I
C
/I
F
I
F
= 5 mA, V
CE
= 5 V
VO617C-1 CTR 40 80 %
VO617C-2 CTR 63 125 %
VO617C-3 CTR 100 200 %
VO617C-4 CTR 160 320 %
SWITCHING CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
NON-SATURATED
Rise time
I
C
= 2 mA, V
CC
= 5 V, R
L
= 100 Ω
t
r
3μs
Fall time t
f
3μs
Turn-on time t
on
6μs
Turn-off time t
off
4μs
SATURATED
Rise time
I
F
= 1.6 mA, V
CC
= 5 V, R
L
= 1.9 kΩ
t
r
7μs
Fall time t
f
12 μs
Turn-on time t
on
9μs
Turn-off time t
off
15 μs
Input
V
OUT
V
CC
= 5 V
R
L
10 %
90 %
Input pulse
Output pulse
t
r
t
on
t
f
t
off
SAFETY AND INSULATION RATINGS
PARAMETER SYMBOL VALUE UNIT
MAXIMUM SAFETY RATINGS
Output safety power P
SO
700 mW
Input safety current I
si
400 mW
Safety temperature T
S
175 °C
Comparative tracking index CTI 175
INSULATION RATED PARAMETERS
Maximum withstanding isolation voltage V
ISO
5300 V
RMS
Maximum transient isolation voltage V
IOTM
8000 V
peak
Maximum repetitive peak isolation voltage
V
IORM
565 V
peak
V
IORM
(1)
1140 V
peak
Insulation resistance T
amb
= 25 °C, V
DC
= 500 V R
IO
10
12
Ω
Isolation resistance T
amb
= 100 °C, V
DC
= 500 V R
IO
10
11
Ω
Climatic classification (according to IEC 68 part 1) 55/110/21
Environment (pollution degree in accordance to DIN VDE 0109) 2
Internal and external creepage
Standard DIP-4 ≥ 7 mm
400 mil DIP-4, SMD-4 option 9 ≥ 8 mm
Clearance
Standard DIP-4 ≥ 7 mm
400 mil DIP-4, SMD-4 option 9 ≥ 8 mm
Insulation thickness 0.4 mm
P1-P3P4-P6P7-P9

HCPL2531SD

Mfr. #:
Buy HCPL2531SD
Manufacturer:
ON Semiconductor / Fairchild
Description:
High Speed Optocouplers 1Mbit/s Optocoupler 2Ch HS Transistor
Lifecycle:
New from this manufacturer.
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