NZQA5V6AXV5T1 Datasheet NZQA5V6AXV5T1G, NZQA6V8AXV5T3G, NZQA6V8AXV5T2 | P1-P3

November, 2017 − Rev. 8

1 Publication Order Number:

NZQA5V6AXV5/D

NZQA5V6AXV5 Series

ESD Protection Diode

Low Clamping Voltage

This integrated surge protection device is designed for applications

requiring transient overvoltage protection. It is intended for use in

sensitive equipment such as computers, printers, business machines,

communication systems, medical equipment, and other applications.

Its integrated design provides very effective and reliable protection for

four separate lines using only one package. These devices are ideal for

situations where board space is at a premium.

Features

• Low Clamping Voltage

• Small SOT−553 SMT Package

• Stand Off Voltage: 3 V

• Low Leakage Current

• Four Separate Unidirectional Configurations for Protection

• ESD Protection: IEC61000−4−2: Level 4 ESD Protection

MILSTD 883C − Method 3015−6: Class 3

• Complies to USB 1.1 Low Speed & Full Speed Specifications

• These are Pb−Free Devices

Benefits

• Provides Protection for ESD Industry Standards: IEC 61000, HBM

• Protects Four Lines Against Transient Voltage Conditions

• Minimize Power Consumption of the System

• Minimize PCB Board Space

Typical Applications

• Instrumentation Equipment

• Serial and Parallel Ports

• Microprocessor Based Equipment

• Notebooks, Desktops, Servers

• Cellular and Portable Equipment

MAXIMUM RATINGS (T

= 25°C unless otherwise noted)

Characteristic

Symbol Value Unit

Peak Power Dissipation (Note 1) P

20 W

Steady State Power − 1 Diode (Note 2) P

380 mW

Thermal Resistance,

Junction−to−Ambient

Above 25°C, Derate

327

3.05

°C/W

mW/°C

Maximum Junction Temperature T

Jmax

150 °C

Operating Junction and Storage

Temperature Range

stg

−55 to +150 °C

Lead Solder Temperature (10 seconds

duration)

260 °C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. Non−repetitive current per Figure 5.

2. Only 1 diode under power. For all 4 diodes under power, P

will be 25%.

Mounted on FR−4 board with min pad.

See Application Note AND8308/D for further description of

survivability specs.

SOT−553*

SOT−553

CASE 463B

PLASTIC

MARKING DIAGRAM

www.onsemi.com

Device Package Shipping

†

ORDERING INFORMATION

NZQA5V6AXV5T1 SOT−553* 4000/Tape & Reel

NZQA6V8AXV5T1 SOT−553* 4000/Tape & Reel

NZQA6V8AXV5T3 16000/Tape & Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

xx M G

xx = Device Code

M = Date Code*

G = Pb−Free Package

(Note: Microdot may be in either location)

SOT−553*

NZQA5V6AXV5T1G SOT−553* 4000/Tape & Reel

NZQA6V8AXV5T1G SOT−553* 4000/Tape & Reel

NZQA6V8AXV5T3G 16000/Tape & Reel

*This package is inherently Pb−Free.

SCALE 4:1

NZQA5V6AXV5 Series

www.onsemi.com

ELECTRICAL CHARACTERISTICS

= 25°C unless otherwise noted)

Symbol

Parameter

Maximum Reverse Peak Pulse Current

Clamping Voltage @ I

RWM

Working Peak Reverse Voltage

Maximum Reverse Leakage Current @ V

RWM

Breakdown Voltage @ I

Test Current

Maximum Temperature Coefficient of V

Forward Current

Forward Voltage @ I

Maximum Zener Impedance @ I

Reverse Current

Maximum Zener Impedance @ I

*See Application Note AND8308/D for detailed explanations of

datasheet parameters.

Uni−Directional

RWM

ELECTRICAL CHARACTERISTICS (T

= 25°C)

Device

Marking

Breakdown

Voltage

@ 1 mA (V)

Leakage

Current

@ V

Max @ I

(Note 4)

Typ

Capacitance

@ 0 V Bias

(pF)

(Note 3)

Typ

Capacitance

@ 3 V Bias

(pF)

(Note 3)

Min Nom Max V

RWM

(mA)

(V)

(A)

Typ Max Typ Max

Per

IEC61000−4−2

(Note 5)

NZQA5V6AXV5 5P 5.3 5.6 5.9 3.0 1.0 13 1.6 13 17 7.0 11.5 Figures 1 and 2

(See Below)

NZQA6V8AXV5 6H 6.47 6.8 7.14 4.3 1.0 13 1.6 12 15 6.7 9.5

3. Capacitance of one diode at f = 1 MHz, V

= 0 V, T

= 25°C

4. Surge current waveform per Figure 5.

5. For test procedure see Figures 3 and 4 and Application Note AND8307/D.

Figure 1. ESD Clamping Voltage Screenshot

Positive 8 kV Contact per IEC61000−4−2

Figure 2. ESD Clamping Voltage Screenshot

Negative 8 kV Contact per IEC61000−4−2

NZQA5V6AXV5 Series

www.onsemi.com

IEC 61000−4−2 Spec.

Level

Test Volt-

age (kV)

First Peak

Current

(A)

Current at

30 ns (A)

Current at

60 ns (A)

1 2 7.5 4 2

2 4 15 8 4

3 6 22.5 12 6

4 8 30 16 8

peak

90%

10%

IEC61000−4−2 Waveform

100%

I @ 30 ns

I @ 60 ns

= 0.7 ns to 1 ns

Figure 3. IEC61000−4−2 Spec

Figure 4. Diagram of ESD Test Setup

50 W

Cable

Device

Under

Test

Oscilloscope

ESD Gun

50 W

The following is taken from Application Note

AND8308/D − Interpretation of Datasheet Parameters

for ESD Devices.

ESD Voltage Clamping

For sensitive circuit elements it is important to limit the

voltage that an IC will be exposed to during an ESD event

to as low a voltage as possible. The ESD clamping voltage

is the voltage drop across the ESD protection diode during

an ESD event per the IEC61000−4−2 waveform. Since the

IEC61000−4−2 was written as a pass/fail spec for larger

systems such as cell phones or laptop computers it is not

clearly defined in the spec how to specify a clamping voltage

at the device level. ON Semiconductor has developed a way

to examine the entire voltage waveform across the ESD

protection diode over the time domain of an ESD pulse in the

form of an oscilloscope screenshot, which can be found on

the datasheets for all ESD protection diodes. For more

information on how ON Semiconductor creates these

screenshots and how to interpret them please refer to

AND8307/D.

Figure 5. 8 x 20 ms Pulse Waveform

100

020406080

t, TIME (ms)

% OF PEAK PULSE CURRENT

PULSE WIDTH (t

) IS DEFINED

AS THAT POINT WHERE THE

PEAK CURRENT DECAY = 8 ms

PEAK VALUE I

RSM

@ 8 ms

HALF VALUE I

RSM

/2 @ 20 ms

P1-P3 P4-P5

NZQA5V6AXV5T1

Mfr. #:

Buy NZQA5V6AXV5T1

Manufacturer:

ON Semiconductor

Description:

ESD Suppressors / TVS Diodes Low Cap. TVS Quad

Lifecycle:

New from this manufacturer.

Delivery:

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