S OT-227
ISOTOP
®
file # E145592
"UL Recognized"
G
S
S
D
N-Channel FREDFET
Absolute Maximum Ratings
Thermal and Mechanical Characteristics
Single die FREDFET
Unit
A
V
mJ
A
Unit
W
°C/W
°C
V
oz
g
in·lbf
N·m
Ratings
84
52
447
±30
3352
60
Min Typ Max
961
0.13
0.15
-55 150
2500
1.03
29.2
10
1.1
Parameter
Continuous Drain Current @ T
C
= 25°C
Continuous Drain Current @ T
C
= 100°C
Pulsed Drain Current
1
Gate-Source Voltage
Single Pulse Avalanche Energy
2
Avalanche Current,
Repetitive or Non-Repetitive
Characteristic
Total Power Dissipation @ T
C
= 25°C
Junction to Case Thermal Resistance
Case to Sink Thermal Resistance, Flat, Greased Surface
Operating and Storage Junction Temperature Range
RMS Voltage
(50-60hHz Sinusoidal Waveform from Terminals to Mounting Base for 1 Min.)
Package Weight
Terminals and Mounting Screws.
Symbol
I
D
I
DM
V
GS
E
AS
I
AR
Symbol
P
D
R
θ
JC
R
θ
CS
T
J
,T
STG
V
Isolation
W
T
Torque
Microsemi Website - http://www.microsemi.com
TYPICAL APPLICATIONS
• ZVS phase shifted and other full bridge
• Half bridge
• PFC and other boost converter
• Buck
converter
• Single and two switch forward
• Flyback
FEATURES
• Fast switching with low EMI
• Low t
rr
for high reliability
• Ultra low C
rss
for improved noise immunity
• Low gate charge
• Avalanche energy rated
• RoHS compliant
APT80F60J
600V, 84A, 0.055Ω Max, t
rr
≤ 370ns
APT80F60J
Power MOS 8
™
is a high speed, high voltage N-channel switch-mode power MOSFET.
This 'FREDFET' version has a drain-source (body) diode that has been optimized for
high reliability in ZVS phase shifted bridge and other circuits through reduced t
rr
, soft
recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly
reduced ratio of C
rss
/C
iss
result in excellent noise immunity and low switching loss.
The intrinsic gate resistance and capacitance of the poly-silicon gate structure help
control di/dt during switching, resulting in low EMI and reliable paralleling, even when
switching at very high frequency.
050-8175 Rev C 4-2011