ADG704BRMZ-REEL7

–3–REV. A
ADG704
SPECIFICATIONS
1
B Version
–40C to
Parameter +25C +85C Units Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range 0 V to V
DD
V
On-Resistance (R
ON
) 4.5 5 typ V
S
= 0 V to V
DD
, I
DS
= –10 mA;
8 max Test Circuit 1
On-Resistance Match Between
Channels (R
ON
) 0.1 typ V
S
= 0 V to V
DD
, I
DS
= –10 mA
0.4 max
On-Resistance Flatness (R
FLAT(ON)
) 2.5 typ V
S
= 0 V to V
DD
, I
DS
= –10 mA
LEAKAGE CURRENTS V
DD
= +3.3 V
Source OFF Leakage I
S
(OFF) ±0.01 nA typ V
S
= 3 V/1 V, V
D
= 1 V/3 V;
±0.1 ±0.3 nA max Test Circuit 2
Drain OFF Leakage I
D
(OFF) ±0.01 nA typ V
S
= 3 V/1 V, V
D
= 1 V/3 V;
±0.1 ±0.3 nA max Test Circuit 2
Channel ON Leakage I
D
, I
S
(ON) ±0.01 nA typ V
S
= V
D
= 3 V or 1 V;
±0.1 ±0.3 nA max Test Circuit 3
DIGITAL INPUTS
Input High Voltage, V
INH
2.0 V min
Input Low Voltage, V
INL
0.4 V max
Input Current
I
INL
or I
INH
0.005 µA typ V
IN
= V
INL
or V
INH
±0.1 µA max
DYNAMIC CHARACTERISTICS
2
t
ON
16 ns typ R
L
= 300 , C
L
= 35 pF
24 ns max V
S
= 2 V, Test Circuit 4
t
OFF
8 ns typ R
L
= 300 , C
L
= 35 pF
16 ns max V
S
= 2 V, Test Circuit 4
Break-Before-Make Time Delay, t
D
9 ns typ R
L
= 300 , C
L
= 35 pF
1 ns min V
S1
= V
S2
= 2 V, Test Circuit 5
Charge Injection 3 pC typ V
S
= 1.5 V, R
S
= 0 , C
L
= 1 nF;
Test Circuit 6
Off Isolation –60 dB typ R
L
= 50 , C
L
= 5 pF, f = 10 MHz
–80 dB typ R
L
= 50 , C
L
= 5 pF, f = 1 MHz;
Test Circuit 7
Channel-to-Channel Crosstalk –62 dB typ R
L
= 50 , C
L
= 5 pF, f = 10 MHz
–82 dB typ R
L
= 50 , C
L
= 5 pF, f = 1 MHz;
Test Circuit 8
Bandwidth –3 dB 200 MHz typ R
L
= 50 , C
L
= 5 pF; Test Circuit 9
C
S
(OFF) 9 pF typ
C
D
(OFF) 37 pF typ
C
D
, C
S
(ON) 54 pF typ
POWER REQUIREMENTS V
DD
= +3.3 V
Digital Inputs = 0 V or 3 V
I
DD
0.001 µA typ
1.0 µA max
NOTES
1
Temperature ranges are as follows: B Version: –40°C to +85°C.
2
Guaranteed by design, not subject to production test.
Specifications subject to change without notice.
(V
DD
= +3 V 10%, GND = 0 V. All Specifications –40C to +85C, unless otherwise noted.)
ADG704
–4–
REV. A
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the ADG704 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.
WARNING!
ESD SENSITIVE DEVICE
TERMINOLOGY
V
DD
Most positive power supply potential.
GND Ground (0 V) reference.
S Source terminal. May be an input or output.
D Drain terminal. May be an input or output.
A0, A1 Logic control inputs.
EN Logic control input.
R
ON
Ohmic resistance between D and S.
R
ON
On resistance match between any two chan-
nels i.e., R
ON
max–R
ON
min.
R
FLAT(ON)
Flatness is defined as the difference between
the maximum and minimum value of on resis-
tance as measured over the specified analog
signal range.
I
D
(OFF) Drain leakage current with the switch “OFF.”
I
S
(OFF) Source leakage current with the switch “OFF.”
I
D
, I
S
(ON) Channel leakage current with the switch “ON.”
V
D
(V
S
) Analog voltage on terminals D, S.
C
S
(OFF) “OFF” switch source capacitance.
C
D
(OFF) “OFF” switch drain capacitance.
C
D
, C
S
(ON) “ON” switch capacitance.
t
ON
Delay between applying the digital control
input and the output switching on. See Test
Circuit 4.
t
OFF
Delay between applying the digital control
input and the output switching off.
t
D
“OFF” time or “ON” time measured between
the 90% points of both switches, when switching
from one address state to another. See Test
Circuit 5.
Crosstalk A measure of unwanted signal that is coupled
through from one channel to another as a
result of parasitic capacitance.
Off Isolation A measure of unwanted signal coupling
through an “OFF” switch.
Charge A measure of the glitch impulse transferred
Injection from the digital input to the analog output
during switching.
Bandwidth The frequency at which the output is attenu-
ated by –3 dBs.
On Response The frequency response of the “ON” switch.
On Loss The voltage drop across the “ON” switch,
seen on the On Response vs. Frequency plot
as how many dBs the signal is away from 0 dB
at very low frequencies.
Table I. Truth Table
A1 A0 EN ON Switch
X X 0 NONE
0011
0112
1013
1114
ABSOLUTE MAXIMUM RATINGS
1
(T
A
= +25°C unless otherwise noted)
V
DD
to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +6 V
Analog, Digital Inputs
2
. . . . . . . . . . . –0.3 V to V
DD
+0.3 V or
30 mA, Whichever Occurs First
Continuous Current, S or D . . . . . . . . . . . . . . . . . . . . . 30 mA
Peak Current, S or D . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mA
(Pulsed at 1 ms, 10% Duty Cycle Max)
Operating Temperature Range
Industrial (B Version) . . . . . . . . . . . . . . . . . –40°C to +85°C
Storage Temperature Range . . . . . . . . . . . . . –65°C to +150°C
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
µSOIC Package, Power Dissipation . . . . . . . . . . . . . . . 315 mW
θ
JA
Thermal Impedance . . . . . . . . . . . . . . . . . . . . . 206°C/W
Lead Temperature, Soldering
Vapor Phase (60 sec) . . . . . . . . . . . . . . . . . . . . . . . . +215°C
Infrared (15 sec) . . . . . . . . . . . . . . . . . . . . . . . . . . . . +220°C
ESD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 kV
NOTES
1
Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those listed in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability. Only one absolute
maximum rating may be applied at any one time.
2
Overvoltages at IN, S or D will be clamped by internal diodes. Current should be
limited to the maximum ratings given.
ORDERING GUIDE
Temperature Package
Model Range Brand
1
Option
2
ADG704BRM –40°C to +85°C S9B RM-10
NOTES
1
Brand = Due to small package size, these three characters represent the part
number.
2
RM = µSOIC.
PIN CONFIGURATION
(10-Lead SOIC)
TOP VIEW
(Not to Scale)
10
9
8
7
6
1
2
3
4
5
A0
S1
GND
S3
EN
A1
S2
D
S4
V
DD
ADG704
ADG704
–5–REV. A
Typical Performance Characteristics–
V
D
OR V
S
– DRAIN OR SOURCE VOLTAGE – Volts
6.0
0
R
ON
V
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
T
A
= +258C
V
DD
= +2.7V
V
DD
= +3.0V
V
DD
= +4.5V
V
DD
= +5.0V
Figure 1. On Resistance as a Function of V
D
(V
S
) Single
Supplies
V
D
OR V
S
– DRAIN OR SOURCE VOLTAGE – Volts
6.0
0
R
ON
V
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0.5 1.0 1.5 2.0 2.5 3.0
V
DD
= +3.0V
+858C
+258C
–408C
Figure 2. On Resistance as a Function of V
D
(V
S
) for
Different Temperatures; V
DD
= 3 V
V
D
OR V
S
– DRAIN OR SOURCE VOLTAGE – Volts
6.0
0
R
ON
V
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
V
DD
= +5.0V
+858C
+258C
–408C
Figure 3. On Resistance as a Function of V
D
(V
S
) for
Different Temperatures; V
DD
= 5 V
FREQUENCY – Hz
10m
I
SUPPLY
– A
1m
100m
10m
1m
100n
10n
1n
100 1k 10k 100k 1M 10M
A0 TOGGLED
EN TOGGLED
V
DD
= +5V
Figure 4. Supply Current vs. Input Switching Frequency
Figure 5. Off Isolation vs. Frequency
–30
CROSSTALK – dB
–40
–50
–60
–70
–80
FREQUENCY – Hz
10k 100k 1M 10M 100M
–90
–100
–110
–120
–130
V
DD
= +5V, +3V
Figure 6. Crosstalk vs. Frequency

ADG704BRMZ-REEL7

Mfr. #:
Manufacturer:
Analog Devices Inc.
Description:
Multiplexer Switch ICs 4:1 4 Ohm 200MHz CMOS
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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