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IXTP200N055T2

P1-P3P4-P6
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTA200N055T2
IXTP200N055T2
Fig. 7. Input Admittance
0
20
40
60
80
100
120
140
160
180
200
3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5
V
GS
- Volts
I
D
- Amperes
T
J
= 150ºC
25ºC
- 40ºC
Fig. 8. Transconductance
0
20
40
60
80
100
120
140
0 20 40 60 80 100 120 140 160 180 200
I
D
- Amperes
g
f s
- Siemens
T
J
= - 40ºC
150ºC
25ºC
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
0
40
80
120
160
200
240
280
0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3
V
SD
- Volts
I
S
- Amperes
T
J
= 150ºC
T
J
= 25ºC
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0 102030405060708090100110
Q
G
- NanoCoulombs
V
GS
- Volts
V
DS
= 28V
I
D
= 100A
I
G
= 10mA
Fig. 11. Capacitance
100
1,000
10,000
100,000
0 5 10 15 20 25 30 35 40
V
DS
- Volts
Capacitance - PicoFarads
f
= 1 MHz
C
iss
C
rss
C
oss
Fig. 12. Forward-Bias Safe Operating Area
1
10
100
1,000
1 10 100
V
DS
- Volts
I
D
- Amperes
T
J
= 175ºC
T
C
= 25ºC
Single Pulse
25µs
1ms
100µs
10ms
100ms
R
DS(
on
)
Limit
© 2008 IXYS CORPORATION, All rights reserved
IXTA200N055T2
IXTP200N055T2
Fig. 14. Resistive Turn-on
Rise Time vs. Drain Current
20.0
20.5
21.0
21.5
22.0
22.5
23.0
23.5
24.0
24 26 28 30 32 34 36 38 40 42 44 46 48 50
I
D
- Amperes
t
r
- Nanoseconds
R
G
= 3.3
Ω
V
GS
= 10V
V
DS
= 30V
T
J
= 25ºC
T
J
= 125ºC
Fig. 15. Resistive Turn-on
Switching Times vs. Gate Resistance
0
20
40
60
80
100
120
140
4 6 8 101214161820
R
G
- Ohms
t
r
- Nanoseconds
24
28
32
36
40
44
48
52
t
d(on)
- Nanoseconds
t
r
t
d(on)
- - - -
T
J
= 125ºC, V
GS
= 10V
V
DS
= 30V
I
D
= 50A, 25A
Fig. 16. Resistive Turn-off
Switching Times vs. Junction Temperature
23
24
25
26
27
28
29
30
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
f
- Nanoseconds
20
30
40
50
60
70
80
90
t
d(off)
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 3.3
Ω
, V
GS
= 10V
V
DS
= 30V
I
D
= 50A
I
D
= 25A
Fig. 17. Resistive Turn-off
Switching Times vs. Drain Current
24
25
26
27
28
29
24 26 28 30 32 34 36 38 40 42 44 46 48 50
I
D
- Amperes
t
f
- Nanoseconds
30
40
50
60
70
80
t
d(off)
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 3.3
Ω
, V
GS
= 10V
V
DS
= 30V
T
J
= 25ºC
T
J
= 125ºC
Fig. 13. Resistive Turn-on
Rise Time vs. Junction Temperature
19
20
21
22
23
24
25
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
r
- Nanoseconds
R
G
= 3.3
Ω
V
GS
= 10V
V
DS
= 30V
I
D
= 25A
I
D
= 50A
Fig. 18. Resistive Turn-off
Switching Times vs. Gate Resistance
20
40
60
80
100
120
140
4 6 8 10 12 14 16 18 20
R
G
- Ohms
t
f
- Nanoseconds
0
40
80
120
160
200
240
t
d(off)
- Nanoseconds
t
f
t
d(off)
- - - -
T
J
= 125ºC, V
GS
= 10V
V
DS
= 30V
I
D
= 25A
I
D
= 50A
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTA200N055T2
IXTP200N055T2
Fig. 19. Maximum Transient Thermal Impedance
0.01
0.10
1.00
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W
IXYS REF: T_200N055T2(V5)3-06-08-B
P1-P3P4-P6

IXTP200N055T2

Mfr. #:
Buy IXTP200N055T2
Manufacturer:
Littelfuse
Description:
MOSFET 200 Amps 55V 0.0042 Rds
Lifecycle:
New from this manufacturer.
Delivery:
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