Electrical characteristics PD85035-E
4/16 Doc ID 13597 Rev 3
2 Electrical characteristics
T
CASE
= +25 °C
2.1 Static
2.2 Dynamic
2.3 ESD protection characteristics
2.4 Moisture sensitivity level
Table 4. Static
Symbol Test conditions Min Typ Max Unit
I
DSS
V
GS
= 0 V V
DS
= 25 V 1 µA
I
GSS
V
GS
= 5 V V
DS
= 0 V 1 µA
V
GS(Q)
V
DS
= 10 V
I
D
= 250 mA 3.4 4.6 V
V
DS(ON)
V
GS
= 10 V I
D
= 3 A 0.64 0.7 V
C
ISS
V
GS
= 0 V V
DS
= 12.5 V f = 1 MHz 76 pF
C
OSS
V
GS
= 0 V V
DS
= 12.5 V f = 1 MHz 45 pF
C
RSS
V
GS
= 0 V V
DS
= 12.5 V f = 1 MHz 1.4 pF
Table 5. Dynamic
Symbol Test conditions Min Typ Max Unit
P3dB V
DD
= 13.6 V, I
DQ
= 350 mA f = 870 MHz 35 40 W
G
P
V
DD
= 13.6 V, I
DQ
= 350 mA, P
OUT
= 15 W, f = 870 MHz 15 17 dB
h
D
V
DD
= 13.6 V, I
DQ
= 350 mA, P
OUT
= P3dB, f = 870 MHz 60 72 %
Load
mismatch
V
DD
= 1 7V, I
DQ
= 350 mA, P
OUT
= 50 W, f = 870 MHz
All phase angles
20:1 VSWR
Table 6. ESD protection characteristics
Test conditions Class
Human body model 2
Machine model M3
Table 7. Moisture sensitivity level
Test methodology Rating
J-STD-020B MSL 3
PD85035-E Impedance
Doc ID 13597 Rev 3 5/16
3 Impedance
Figure 2. Current conventions
Table 8. Impedance data
Frequency (MHz) Z
IN
()Z
DL
()
870 MHz 0.57 +j 0.73 1.73 -j 0.15
Typical performance PD85035-E
6/16 Doc ID 13597 Rev 3
4 Typical performance
Figure 3. Threshold voltage Figure 4. DC output characteristic
Figure 5. I
D
vs V
GS
Figure 6. Capacitances vs voltage
0
20
40
60
80
100
120
140
160
0 5 10 15 20 25 30 35 40 45
Vds (V)
Caoacitance (pF)
Ciss Crss Coss

PD85035TR-E

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
RF MOSFET Transistors POWER R.F. N-Ch Trans
Lifecycle:
New from this manufacturer.
Delivery:
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