I
NTEGRATED
C
IRCUITS
D
IVISION
DS-IX2113-R03 www.ixysic.com 1
Driver Characteristics
Features
• Floating Channel for Bootstrap Operation to +600V
with Absolute Maximum Rating of +700V
• Outputs Capable of Sourcing and Sinking 2A
• Gate Drive Supply Range From 10V to 20V
• Enhanced Robustness due to SOI Process
• Tolerant to Negative Voltage Transients:
dV/dt Immune
• 3.3V Logic Compatible
• Undervoltage Lockout for Both High-side and
Low-Side Outputs
• Matched Propagation Delays
Description
The IX2113 is a high voltage integrated circuit that can
drive high speed MOSFETs and IGBTs that operate at
up to +600V. The IX2113 is configured with
independent high-side and low-side referenced output
channels, both of which can source and sink 2A. The
floating high-side channel can drive an N-channel
power MOSFET or IGBT 600V from the common
reference.
Manufactured on IXYS Integrated Circuits Division's
proprietary high-voltage BCDMOS on SOI (silicon on
insulator) process, the IX2113 is extremely robust, and
is virtually immune to negative transients. The UVLO
circuit prevents the turn-on of the MOSFET or IGBT
until there is sufficient V
BS
or V
CC
supply voltage.
Propagation delays are matched for use in high
frequency applications.
The IX2113 is available in a 14-pin DIP package and
in a 16-pin SOIC package.
Ordering Information
IX2113 Functional Block Diagram
Parameter Rating Units
V
OFFSET
600 V
I
O +/-
(Source/Sink)
2/2 A
V
OUT
10-20 V
t
on
/t
off
113/100 ns
Delay Matching (Max) 20 ns
Part Description
IX2113G 14-Pin DIP (25/Tube)
IX2113B 16-Pin SOIC (50/Tube)
IX2113BTR 16-Pin SOIC (1000/Reel)
Level
Shift
V
DD
/ V
CC
V
SS
/ COM
LS Delay
Control
Level
Shift
V
DD
/ V
CC
V
SS
/ COM
UVLO
High
Voltage
Level
Shift
UVLO
Pulse
Generator
R
R
S
Q
Buffer
V
DD
HIN
SD
LIN
V
SS
V
B
HO
V
S
V
CC
LO
COM
Input Control Logic
&
Cycle-by-Cycle
Edge-Triggered
Shutdown
Buffer
IX2113
600V High and Low Side
Gate Driver