VS-12TTS08SPbF Series
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Vishay Semiconductors
Revision: 08-Jul-15
2
Document Number: 94499
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ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average on-state current I
T(AV)
T
C
= 108 °C, 180° conduction, half sine wave
8
A
Maximum RMS on-state current I
T(RMS)
12.5
Maximum peak one-cycle
non-repetitive surge current
I
TSM
10 ms sine pulse, rated V
RRM
applied, T
J
= 125 °C 95
10 ms sine pulse, no voltage reapplied, T
J
= 125 °C 110
Maximum I
2
t for fusing I
2
t
10 ms sine pulse, rated V
RRM
applied, T
J
= 125 °C 45
A
2
s
10 ms sine pulse, no voltage reapplied, T
J
= 125 °C 64
Maximum I
2
t for fusing I
2
t t = 0.1 ms to 10 ms, no voltage reapplied, T
J
= 125 °C 640 A
2
s
Maximum on-state voltage drop V
TM
8 A, T
J
= 25 °C 1.2 V
On-state slope resistance r
t
T
J
= 125 °C
16.2 m:
Threshold voltage V
T(TO)
0.87 V
Maximum reverse and direct leakage current I
RM
/I
DM
T
J
= 25 °C
V
R
= Rated V
RRM
/V
DRM
0.05
mA
T
J
= 125 °C 1.0
Typical holding current I
H
Anode supply = 6 V, resistive load, initial I
T
= 1 A,
T
J
= 25 °C
30
Maximum latching current I
L
Anode supply = 6 V, resistive load, T
J
= 25 °C 50
Maximum rate of rise of off-state voltage dV/dt T
J
= T
J
max., linear to 80 %, V
DRM
= R
g
- k = Open 150 V/μs
Maximum rate of rise of turned-on current dI/dt 100 A/μs
TRIGGERING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum peak gate power P
GM
8.0
W
Maximum average gate power P
G(AV)
2.0
Maximum peak positive gate current + I
GM
1.5 A
Maximum peak negative gate voltage - V
GM
10 V
Maximum required DC gate current to trigger I
GT
Anode supply = 6 V, resistive load, T
J
= - 65 °C 20
mAAnode supply = 6 V, resistive load, T
J
= 25 °C 15
Anode supply = 6 V, resistive load, T
J
= 125 °C 10
Maximum required DC gate voltage to trigger V
GT
Anode supply = 6 V, resistive load, T
J
= - 65 °C 1.2
V
Anode supply = 6 V, resistive load, T
J
= 25 °C 1
Anode supply = 6 V, resistive load, T
J
= 125 °C 0.7
Maximum DC gate voltage not to trigger V
GD
T
J
= 125 °C, V
DRM
= Rated value
0.2
Maximum DC gate current not to trigger I
GD
0.1 mA
SWITCHING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Typical turn-on time t
gt
T
J
= 25 °C 0.8
μsTypical reverse recovery time t
rr
T
J
= 125 °C
3
Typical turn-off time t
q
100
