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TPC8014(TE12L,Q,M)

P1-P3P4-P6P7-P7
TPC8014
2009-09-29
4
048 20
0
0.6
1
0.8
0.2
0.4
I
D
= 11A
5.5
2.5
Common source
Ta = 25°C
Pulse test
12 16
I
D
– V
DS
Drain-source voltage V
DS
(V)
Drain current I
D
(A)
3.5
4
6
8
10
0 1 2 3 4 5
0
4
8
12
16
20
V
GS
= 2.6 V
3.0
3.2
3.1
2.7
2.9
2.8
3.3
3.4
I
D
– V
DS
Drain-source voltage V
DS
(V)
Drain current I
D
(A)
3.4
0.4 0.6 0.8 1.0
0
4
6
8
10
2
00.2
V
GS
= 2.5 V
2.6
2.7
2.8
2.9
3.0
3.1
3.210
8
6
4
3.
3.3
I
D
– V
GS
Gate-source voltage V
GS
(V)
Drain current I
D
(A)
0
20
0
0.5
1 1.5 4
4
8
12
16
Common source
V
DS
= 10 V
Pulse test
23
25
100
Ta = −55°C
2.5 2.5
V
DS
– V
GS
Drain-source voltage V
DS
(V)
Gate-source voltage V
GS
(V)
|Y
fs
| – I
D
Forward transfer admittance ⎪Y
fs
⎪ (S)
Drain current I
D
(A)
R
DS (ON)
– I
D
Drain current I
D
(A)
Drain-source ON resistance
R
DS (ON)
(mΩ)
1 3 30 100
Common source
Ta = 25°C
Pulse test
1
10
100
V
GS
= 10 V
V
GE
= 4.5 V
3
30
10
0.1 1 10 100
Common source
V
DS
= 10 V
Pulse test
Tc = 100°C −55°C
25°C
0.1
1
100
10
TPC8014
2009-09-29
5
−80 −40 0 40 80 160120
0
5
10
25
15
20
Common source
Pulse test
V
GS
= 4.5 V
I
D
= 11, 5.5, 2.5 A
10
I
D
= 11, 5.5, 2.5 A
R
DS (ON)
– Ta (α)
Ambient temperature Ta (°C)
Drain-source ON resistance
R
DS (ON)
(Ω)
I
DR
– V
DS
Drain-source voltage V
DS
(V)
Drain reverse current I
DR
(A)
V
th
– Ta
Ambient temperature Ta (°C)
Gate threshold voltage V
th
(V)
Capacitance – V
DS
Drain-source voltage V
DS
(V)
Capacitance C (pF)
P
D
– Ta
Drain power dissipation P
D
(W)
Ambient temperature Ta (°C)
0
0
0.4
0.8
1.2
1.6
2
50 100 150 200
(1) Device mounted on a
glass-epoxy board (a)
(Note 2a)
(2) Device mounted on a
glass-epoxy board (b)
(Note 2b)
t = 10 s
(1)
(2)
Dynamic input/output characteristics
Drain-source voltage V
DS
(V)
Gate-source voltage V
GS
(V)
Total gate charge Q
g
(nC)
0.1 1 10 100
10
100
1000
10000
C
rss
C
oss
C
iss
Common source
V
GS
= 10 V
I
D
= 1 mA
Pulse test
0.1
1
10
0
0.4
0.6
0.8 1.2
0.2
100
1
Common source
Ta = 25°C
Pulse test
3
1
5
10
V
GS
= 10 V
−80 −40 0 40 80 120
0
1
3
2
Common source
V
DS
= 10 V
I
D
= 1 mA
Pulse test
0.5
1.5
2.5
0
15
10
20
30
5
25
0102030
Common source
Ta = 25°C
I
D
= 11 A
Pulse test
V
DS
V
DD
= 24 V
40 50 60
12
6
V
DD
= 24 V
6
12
0
15
10
20
30
5
25
TPC8014
2009-09-29
6
Pulse width t
w
(S)
r
th
− t
w
Normalized transient thermal impedance
r
th
(°C/W)
0.1
0.001 0.01 0.1 10 100 1000
1
100
1000
Single pulse
1
(2)
10
(1) Device mounted on a glass-epoxy board (a)
(Note 2a)
(2) Device mounted on a glass-epoxy board (b)
(Note 2b)
t = 10 s
(1)
Drain-source voltage V
DS
(V)
Drain current I
D
(A)
Safe operating area
0.01
0.01 0.1 1 10 100
0.1
1
10
100
* Single pulse
Ta = 25°C
Curves must be derated
linearly with increase in
temperature.
I
D
max (pluse) *
10 ms*
1 ms*
V
DSS
max
P1-P3P4-P6P7-P7

TPC8014(TE12L,Q,M)

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