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HMC-ALH482-SX

P1-P3P4-P6
LOW NOISE AMPLIFIERS - CHIP
1
1 - 204
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
GaAs HEMT MMIC LOW NOISE
AMPLIFIER, 2 - 22 GHz
v04.1009
General Description
Features
Functional Diagram
Noise Figure: 1.7 dB @ 2-12 GHz
Noise Figure: 2.2 dB @ 12-22 GHz
Gain: 16 dB @ 12 GHz
P1dB Output Power: +14 dBm
Supply Voltage: +4V @ 45 mA
Die Size: 2.04 x 1.2 x 0.1 mm
Electrical Speci cations*, T
A
= +25° C, Vdd= +4V
Typical Applications
This HMC-ALH482 is ideal for:
• Wideband Communication Systems
• Surveillance Systems
• Point-to-Point Radios
• Point-to-Multi-Point Radios
• Military & Space
• Test Instrumentation
The HMC-ALH482 is a GaAs MMIC HEMT Low Noise
Wideband Ampli er die which operates between 2
and 22 GHz. The ampli er provides 16 dB of gain, 1.7
dB noise  gure up to 12 GHz and +14 dBm of output
power at 1 dB gain compression while requiring only
45 mA from a +4V supply voltage. The HMC-ALH482
ampli er is ideal for integration into Multi-Chip-
Modules (MCMs) due to its small size.
HMC-ALH482
Parameter Min. Typ. Max. Min. Typ. Max. Units
Frequency Range 2 - 12 12 - 22 GHz
Gain 15 16 15 16 dB
Gain Variation over Temperature 0.01 0.01 dB / °C
Noise Figure 1.7 2.5 2.2 3 dB
Input Return Loss 8 6 dB
Output Return Loss 10 5 dB
Output Power for 1 dB Compression 14 14 dBm
Supply Current (Idd) (Vdd = 4V, Vgg = -0.2V Typ.) 45 45 mA
*Unless otherwise indicated, all measurements are from probed die
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
LOW NOISE AMPLIFIERS - CHIP
1
1 - 205
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC-ALH482
v04.1009
GaAs HEMT MMIC LOW NOISE
AMPLIFIER, 2 - 22 GHz
Noise Figure vs. Frequency
Output Return Loss vs. Frequency
Linear Gain vs. Frequency
Input Return Loss vs. Frequency
0
2
4
6
8
10
12
14
16
18
20
0 2 4 6 8 10 12 14 16 18 20 22 24
GAIN (dB)
FREQUENCY (GHz)
-25
-20
-15
-10
-5
0
0 2 4 6 8 10 12 14 16 18 20 22 24
RETURN LOSS (dB)
FREQUENCY (GHz)
0
0.5
1
1.5
2
2.5
3
0 2 4 6 8 10 12 14 16 18 20 22 24
NOISE FIGURE (dB)
FREQUENCY (GHz)
-16
-14
-12
-10
-8
-6
-4
-2
0
0 2 4 6 8 10 12 14 16 18 20 22 24
RETURN LOSS (dB)
FREQUENCY (GHz)
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
LOW NOISE AMPLIFIERS - CHIP
1
1 - 206
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC-ALH482
v04.1009
GaAs HEMT MMIC LOW NOISE
AMPLIFIER, 2 - 22 GHz
Outline Drawing
Absolute Maximum Ratings
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM].
2. TYPICAL BOND PAD IS .004” SQUARE.
3. BACKSIDE METALLIZATION: GOLD.
4. BACKSIDE METAL IS GROUND.
5. BOND PAD METALLIZATION: GOLD.
6. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
7. OVERALL DIE SIZE
±
.002”
Drain Bias Voltage +5 Vdc
Drain Bias Current 60 mA
RF Input Power 5 dBm
Gate Bias Voltage -1 to 0.3 Vdc
Channel Temperature 180 °C
Continuous Pdiss (T = 85 °C)
derate 4.7 mW/ °C above 85 °C
0.45 W
Thermal Resistance
(channel to die bottom)
213.3 °C/W
Storage Temperature -65 to +150 °C
Operating Temperature -55 to +85 °C
Die Packaging Information
[1]
Standard Alternate
GP-2 (Gel Pack) [2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
P1-P3P4-P6

HMC-ALH482-SX

Mfr. #:
Buy HMC-ALH482-SX
Manufacturer:
Analog Devices Inc.
Description:
RF Amplifier GaAs HEMT WBand lo Noise amp 2 - 22 GHz
Lifecycle:
New from this manufacturer.
Delivery:
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