LTC4442/LTC4442-1
7
4442fb
BLOCK DIAGRAM
8
1
2
SHOOT-
THROUGH
PROTECTION
THREE-STATE
INPUT
BUFFER
LEVEL
SHIFTER
INTERNAL
SUPPLY
UNDERVOLTAGE
LOCKOUT
UNDERVOLTAGE
LOCKOUT
BOOST
TG
TS
3
6
BG
4442 BD
V
CC
7k
7k
V
LOGIC
7
V
CC
5
IN
4
GND
9
GND
TIMING DIAGRAM
V
IL(BG)
V
IL(TG)
90%
IN
TG
BG
90%
10%
t
r(TG)
t
pLH(TG)
10%
t
r(BG)
4442 TD
t
f(BG)
t
f(TG)
t
pLH(BG)
t
pHL(BG)
t
pHL(TG)
LTC4442/LTC4442-1
8
4442fb
OPERATION
Overview
The LTC4442 receives a ground-referenced, low voltage
digital input signal to drive two N-channel power MOSFETs
in a synchronous buck power supply confi guration. The
gate of the low side MOSFET is driven either to V
CC
or GND,
depending on the state of the input. Similarly, the gate of
the high side MOSFET is driven to either BOOST or TS by
a supply bootstrapped off of the switch node (TS).
Input Stage
The LTC4442 employs a unique three-state input stage with
transition thresholds that are proportional to the V
LOGIC
supply. The V
LOGIC
supply can be tied to the controller
IC’s power supply so that the input thresholds will match
those of the controllers output signal. Alternatively, V
LOGIC
can be tied to V
CC
to simplify routing. An internal voltage
regulator in the LTC4442 limits the input threshold values
for V
LOGIC
supply voltages greater than 5V.
The relationship between the transition thresholds and the
three input states of the LTC4442 is illustrated in Figure 1.
When the voltage on IN is greater than the threshold V
IH(TG)
,
TG is pulled up to BOOST, turning the high side MOSFET
on. This MOSFET will stay on until IN falls below V
IL(TG)
.
Similarly, when IN is less than V
IH(BG)
, BG is pulled up
to V
CC
, turning the low side (synchronous) MOSFET on.
BG will stay high until IN increases above the threshold
V
IL(BG)
.
TG HIGH
TG HIGH
V
IH(TG)
V
IL(BG)
V
IL(TG)
V
IH(BG)
IN
TG LOW
TG LOW
BG LOW
BG HIGH
4442 F01
BG LOW
BG HIGH
Figure 1. Three-State Input Operation
The thresholds are positioned to allow for a region in which
both BG and TG are low. An internal resistive divider will
pull IN into this region if the signal driving the IN pin goes
into a high impedance state.
One application of this three-state input is to keep both of
the power MOSFETs off while an undervoltage condition
exists on the controller IC power supply. This can be ac-
complished by driving the IN pin with a logic buffer that
has an enable pin. With the enable pin of the buffer tied
to the power good pin of the controller IC, the logic buf-
fer output will remain in a high impedance state until the
controller confi rms that its supply is not in an undervoltage
state. The three-state input of the LTC4442 will therefore
pull IN into the region where TG and BG are low until the
controller has enough voltage to operate predictably.
The hysteresis between the corresponding V
IH
and V
IL
voltage levels eliminates false triggering due to noise
during switch transitions; however, care should be taken
to keep noise from coupling into the IN pin, particularly
in high frequency, high voltage applications.
Undervoltage Lockout
The LTC4442 contains undervoltage lockout detectors that
monitor both the V
CC
and V
LOGIC
supplies. When V
CC
falls
below 3.04V or V
LOGIC
falls below 2.65V, the output pins
BG and TG are pulled to GND and TS, respectively. This
turns off both of the external MOSFETs. When V
CC
and
V
LOGIC
have adequate supply voltage for the LTC4442 to
operate reliably, normal operation will resume.
Adaptive Shoot-Through Protection
Internal adaptive shoot-through protection circuitry
monitors the voltages on the external MOSFETs to ensure
that they do not conduct simultaneously. The LTC4442
does not allow the bottom MOSFET to turn on until the
gate-source voltage on the top MOSFET is suffi ciently
low, and vice-versa. This feature improves effi ciency by
LTC4442/LTC4442-1
9
4442fb
OPERATION
8
BOOST
LTC4442
TG
N1
Q1
1
TS
C
GS
C
GD
HIGH SIDE
POWER
MOSFET
V
IN
UP TO 38V
2
7
V
CC
BG
N2
Q2
Q3
3
GND
C
GS
4442 F02
C
GD
LOW SIDE
POWER
MOSFET
4
LOAD
INDUCTOR
Figure 2. Capacitance Seen by BG and TG During Switching
eliminating cross-conduction current from fl owing from
the V
IN
supply through the MOSFETs to ground during a
switch transition.
Output Stage
A simplifi ed version of the LTC4442’s output stage is
shown in Figure 2. The pull-up device on both the BG and
TG outputs is an NPN bipolar junction transistor (Q1 and
Q2). The BG and TG outputs are pulled up to within an
NPN V
BE
(~0.7V) of their positive rails (V
CC
and BOOST,
respectively). Both BG and TG have N-channel MOSFET pull-
down devices (N1 and N2) which pull BG and TG down to
their negative rails, GND and TS. An additional NPN bipolar
junction transistor (Q3) is present on BG to increase its
pull-down drive current capacity. The large voltage swing of
the BG and TG output pins is important in driving external
power MOSFETs, whose R
DS(ON)
is inversely proportional
to its gate overdrive voltage (V
GS
– V
TH
).
Rise/Fall Time
Since the power MOSFET generally accounts for the major-
ity of power loss in a converter, it is important to quickly
turn it on and off, thereby minimizing the transition time
and power loss. The LTC4442’s peak pull-up current of
2.4A for both BG and TG (Q1 and Q2) produces a rapid
turn-on transition for the MOSFETs. This high current is
capable of driving a 3nF load with a 12ns rise time.
It is also important to turn the power MOSFETs off quickly
to minimize power loss due to transition time; however,
an additional benefi t of a strong pull-down on the driver
outputs is the prevention of cross-conduction current. For
example, when BG turns the low-side power MOSFET off
and TG turns the high-side power MOSFET on, the volt-
age on the TS pin will rise to V
IN
very rapidly. This high
frequency positive voltage transient will couple through
the C
GD
capacitance of the low side power MOSFET to
the BG pin. If the BG pin is not held down suffi ciently, the
voltage on the BG pin will rise above the threshold volt-
age of the low side power MOSFET, momentarily turning
it back on. As a result, both the high side and low side
MOSFETs will be conducting, which will cause signifi cant
cross-conduction current to fl ow through the MOSFETs
from V
IN
to ground, thereby introducing substantial power
loss. A similar effect occurs on TG due to the C
GS
and C
GD
capacitances of the high side MOSFET.
The LTC4442’s powerful parallel combination of the
N-channel MOSFET (N2) and NPN (Q3) on the BG pull-down
generates a phenomenal 5ns fall time on BG while driving
a 3nF load. Similarly, the 1Ω pull-down MOSFET (N1) on
TG results in a rapid 8ns fall time with a 3nF load. These
powerful pull-down devices minimize the power loss as-
sociated with MOSFET turn-off time and cross-conduction
current.

LTC4442EMS8E#PBF

Mfr. #:
Manufacturer:
Analog Devices / Linear Technology
Description:
Gate Drivers Hi Speed Sync N-Ch MOSFET Drvrs
Lifecycle:
New from this manufacturer.
Delivery:
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