BC548BRL1G Datasheet BC546BG, BC547BZL1G, BC547ARL | P1-P3

June, 2012 − Rev. 7

1 Publication Order Number:

BC546/D

BC546B, BC547A, B, C,

BC548B, C

Amplifier Transistors

NPN Silicon

Features

• Pb−Free Packages are Available*

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector - Emitter Voltage

BC546

BC547

BC548

V

CEO

65

45

30

Vdc

Collector - Base Voltage

BC546

BC547

BC548

V

CBO

80

50

30

Vdc

Emitter - Base Voltage V

EBO

6.0 Vdc

Collector Current − Continuous I

C

100 mAdc

Total Device Dissipation @ T

A

= 25°C

Derate above 25°C

P

D

625

5.0

mW

mW/°C

Total Device Dissipation @ T

C

= 25°C

Derate above 25°C

P

D

1.5

12

W

mW/°C

Operating and Storage Junction

Temperature Range

T

J

, T

stg

−55 to +150 °C

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction−to−Ambient

R

q

JA

200 °C/W

Thermal Resistance, Junction−to−Case

R

q

JC

83.3 °C/W

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

http://onsemi.com

COLLECTOR

1

2

BASE

3

EMITTER

See detailed ordering and shipping information in the package

dimensions section on page 5 of this data sheet.

ORDERING INFORMATION

1

2

3

1

2

BENT LEAD

TAPE & REEL

STRAIGHT LEAD

3

TO−92

CASE 29

STYLE 17

MARKING DIAGRAM

BC

54xy

AYWW G

G

x = 6, 7, or 8

y = A, B or C

A = Assembly Location

Y = Year

WW = Work Week

G = Pb−Free Package

(Note: Microdot may be in either location)

BC546B, BC547A, B, C, BC548B, C

http://onsemi.com

2

ELECTRICAL CHARACTERISTICS (T

A

= 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Collector − Emitter Breakdown Voltage

(I

C

= 1.0 mA, I

B

= 0) BC546

BC547

BC548

V

(BR)CEO

65

45

30

−

V

Collector − Base Breakdown Voltage

(I

C

= 100 mAdc) BC546

BC547

BC548

V

(BR)CBO

80

50

30

−

V

Emitter − Base Breakdown Voltage

(I

E

= 10 mA, I

C

= 0) BC546

BC547

BC548

V

(BR)EBO

6.0

−

V

Collector Cutoff Current

(V

CE

= 70 V, V

BE

= 0) BC546

(V

CE

= 50 V, V

BE

= 0) BC547

(V

CE

= 35 V, V

BE

= 0) BC548

(V

CE

= 30 V, T

A

= 125°C) BC546/547/548

I

CES

−

0.2

−

15

4.0

nA

mA

ON CHARACTERISTICS

DC Current Gain

(I

C

= 10 mA, V

CE

= 5.0 V) BC547A

BC546B/547B/548B

BC548C

(I

C

= 2.0 mA, V

CE

= 5.0 V) BC546

BC547

BC548

BC547A

BC546B/547B/548B

BC547C/BC548C

(I

C

= 100 mA, V

CE

= 5.0 V) BC547A/548A

BC546B/547B/548B

BC548C

h

FE

−

110

200

420

−

90

150

270

−

180

290

520

120

180

300

−

450

800

220

450

800

−

Collector − Emitter Saturation Voltage

(I

C

= 10 mA, I

B

= 0.5 mA)

(I

C

= 100 mA, I

B

= 5.0 mA)

(I

C

= 10 mA, I

B

= See Note 1)

V

CE(sat)

−

0.09

0.2

0.3

0.25

0.6

V

Base − Emitter Saturation Voltage

(I

C

= 10 mA, I

B

= 0.5 mA)

V

BE(sat)

− 0.7 − V

Base − Emitter On Voltage

(I

C

= 2.0 mA, V

CE

= 5.0 V)

(I

C

= 10 mA, V

CE

= 5.0 V)

V

BE(on)

0.55

−

0.7

0.77

V

SMALL−SIGNAL CHARACTERISTICS

Current − Gain − Bandwidth Product

(I

C

= 10 mA, V

CE

= 5.0 V, f = 100 MHz) BC546

BC547

BC548

f

T

150

300

−

MHz

Output Capacitance

(V

CB

= 10 V, I

C

= 0, f = 1.0 MHz)

C

obo

− 1.7 4.5 pF

Input Capacitance

(V

EB

= 0.5 V, I

C

= 0, f = 1.0 MHz)

C

ibo

− 10 − pF

Small − Signal Current Gain

(I

C

= 2.0 mA, V

CE

= 5.0 V, f = 1.0 kHz) BC546

BC547/548

BC547A

BC546B/547B/548B

BC547C/548C

h

fe

125

240

450

−

220

330

600

500

900

260

500

900

−

Noise Figure (I

C

= 0.2 mA, V

CE

= 5.0 V, R

S

= 2 kW, f = 1.0 kHz, Df = 200 Hz)

BC546

BC547

BC548

NF

−

2.0

10

dB

1. I

B

is value for which I

C

= 11 mA at V

CE

= 1.0 V.

BC546B, BC547A, B, C, BC548B, C

http://onsemi.com

3

BC547/BC548

Figure 1. Normalized DC Current Gain

I

C

, COLLECTOR CURRENT (mAdc)

2.0

Figure 2. “Saturation” and “On” Voltages

I

C

, COLLECTOR CURRENT (mAdc)

0.2 0.5 1.0 10 20

50

0.2

100

Figure 3. Collector Saturation Region

I

B

, BASE CURRENT (mA)

Figure 4. Base−Emitter Temperature Coefficient

I

C

, COLLECTOR CURRENT (mA)

2.0 5.0

200

0.6

0.7

0.8

0.9

1.0

0.5

0

0.2

0.4

0.1

0.3

1.6

1.2

2.0

2.8

2.4

1.2

1.6

2.0

0.02 1.0

10

0

20

0.1

0.4

0.8

h

FE

, NORMALIZED DC CURRENT GAIN

V, VOLTAGE (VOLTS)

V

CE

, COLLECTOR-EMITTER VOLTAGE (V)

VB

, TEMPERATURE COEFFICIENT (mV/ C)°θ

1.5

1.0

0.8

0.6

0.4

0.3

0.2 0.5 1.0 10 20

50

2.0

10070

307.05.03.00.70.30.1

0.2 1.0

10 100

T

A

= 25°C

V

BE(sat)

@ I

C

/I

B

= 10

V

CE(sat)

@ I

C

/I

B

= 10

V

BE(on)

@ V

CE

= 10 V

V

CE

= 10 V

T

A

= 25°C

-55°C to +125°CT

A

= 25°C

I

C

= 50 mA I

C

= 100 mA

I

C

= 200 mA

I

C

=

20 mA

I

C

=

10 mA

1.0

Figure 5. Capacitances

V

R

, REVERSE VOLTAGE (VOLTS)

10

Figure 6. Current−Gain − Bandwidth Product

I

C

, COLLECTOR CURRENT (mAdc)

0.4 0.6 1.0 10 20

1.0

2.0 6.0

40

80

100

200

300

400

60

20

40

30

7.0

5.0

3.0

2.0

0.7 1.0 10 202.0

50

307.05.03.00.5

V

CE

= 10 V

T

A

= 25°C

C, CAPACITANCE (pF)

f, CURRENT-GAIN - BANDWIDTH PRODUCT (MHz)

T

0.8 4.0 8.0

T

A

= 25°C

C

ob

C

ib

BC548BRL1G

BC548BRL1G

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