2004 Jan 26 3
NXP Semiconductors Product data sheet
General purpose diode BAS321
CHARACTERISTICS
T
j
= 25 °C unless otherwise specified.
THERMAL CHARACTERISTICS
Notes
1. Soldering point of cathode tab.
2. Device mounted on an FR4 printed circuit board.
SYMBOL PARAMETER CONDITIONS MAX. UNIT
V
F
forward voltage see Fig.3
I
F
= 100 mA 1 V
I
F
= 200 mA 1.25 V
I
R
reverse current see Fig.5
V
R
= 200 V 100 nA
V
R
= 200 V; T
j
= 150 °C 100 µA
C
d
diode capacitance f = 1 MHz; V
R
= 0; see Fig.6 2 pF
t
rr
reverse recovery time when switched from I
F
= 30 mA to
I
R
= 30 mA; R
L
= 100 Ω; measured at
I
R
= 3 mA; see Fig.8
50 ns
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th(j-s)
thermal resistance from junction to soldering point T
s
= 90°C; note 1 130 K/W
R
th(j-a)
thermal resistance from junction to ambient note 2 366 K/W
