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NUD3160DMT1G

P1-P3P4-P6P7-P9P10-P10
© Semiconductor Components Industries, LLC, 2003
October, 2016 − Rev. 7
1 Publication Order Number:
NUD3160/D
NUD3160, SZNUD3160
Industrial Inductive
Load Driver
This micro−integrated part provides a single component solution to
switch inductive loads such as relays, solenoids, and small DC motors
without the need of a free−wheeling diode. It accepts logic level
inputs, thus allowing it to be driven by a large variety of devices
including logic gates, inverters, and microcontrollers.
Features
• Provides Robust Interface between D.C. Relay Coils and Sensitive
Logic
• Capable of Driving Relay Coils Rated up to 150 mA at 12 V, 24 V
or 48 V
• Replaces 3 or 4 Discrete Components for Lower Cost
• Internal Zener Eliminates Need for Free−Wheeling Diode
• Meets Load Dump and other Automotive Specs
• SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
• These are Pb−Free Devices
Typical Applications
• Automotive and Industrial Environment
• Drives Window, Latch, Door, and Antenna Relays
Benefits
• Reduced PCB Space
• Standardized Driver for Wide Range of Relays
• Simplifies Circuit Design and PCB Layout
• Compliance with Automotive Specifications
Gate (1)
10 k
100 k
Drain (3)
Source (2)
Figure 1. Internal Circuit Diagrams
Gate (2)
10 k
100 k
Drain (6)
Source (1)
Gate (5)
Drain (3)
Source (4)
10 k
100 k
CASE 318 CASE 318F
www.onsemi.com
MARKING DIAGRAMS
SOT−23
CASE 318
STYLE 21
JW8 MG
G
JW8 = Specific Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
SC−74
CASE 318F
STYLE 7
JW8 = Specific Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
JW8 MG
G
1
2
3
1
6
Device Package Shipping
†
ORDERING INFORMATION
NUD3160LT1G SOT−23
(Pb−Free)
3000 / Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
NUD3160DMT1G SC−74
(Pb−Free)
3000 / Tape &
Reel
SZNUD3160LT1G SOT−23
(Pb−Free)
3000 / Tape &
Reel
SZNUD3160DMT1G SC−74
(Pb−Free)
3000 / Tape &
Reel
NUD3160, SZNUD3160
www.onsemi.com
2
MAXIMUM RATINGS (T
J
= 25°C unless otherwise specified)
Symbol
Rating Value Unit
V
DSS
Drain−to−Source Voltage – Continuous (T
J
= 125°C) 60 V
V
GSS
Gate−to−Source Voltage – Continuous (T
J
= 125°C) 12 V
I
D
Drain Current – Continuous (T
J
= 125°C)
Minimum copper, double sided board, T
A
= 80°C
SOT−23
SC74 Single device driven
SC74 Both devices driven
1 in
2
copper, double sided board, T
A
= 25°C
SOT−23
SC74 Single device driven
SC74 Both devices driven
158
157
132 ea
272
263
230 ea
mA
E
Z
Single Pulse Drain−to−Source Avalanche Energy
(For Relay’s Coils/Inductive Loads of 80 W or Higher) (T
J
Initial = 85°C)
200 mJ
P
PK
Peak Power Dissipation, Drain−to−Source (Notes 1 and 2)
(T
J
Initial = 85°C)
20 W
E
LD1
Load Dump Pulse, Drain−to−Source (Note 3)
R
SOURCE
= 0.5 W, T = 300 ms)
(For Relay’s Coils/Inductive Loads of 80 W or Higher) (T
J
Initial = 85°C)
60 V
E
LD2
Inductive Switching Transient 1, Drain−to−Source
(Waveform: R
SOURCE
= 10 W, T = 2.0 ms)
(For Relay’s Coils/Inductive Loads of 80 W or Higher) (T
J
Initial = 85°C)
100 V
E
LD3
Inductive Switching Transient 2, Drain−to−Source
(Waveform: R
SOURCE
= 4.0 W, T = 50 ms)
(For Relay’s Coils/Inductive Loads of 80 W or Higher) (T
J
Initial = 85°C)
300 V
Rev−Bat Reverse Battery, 10 Minutes (Drain−to−Source)
(For Relay’s Coils/Inductive Loads of 80 W or more)
−14 V
Dual−Volt Dual Voltage Jump Start, 10 Minutes (Drain−to−Source) 28 V
ESD Human Body Model (HBM)
According to EIA/JESD22/A114 Specification
2000 V
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
NUD3160, SZNUD3160
www.onsemi.com
3
THERMAL CHARACTERISTICS
Symbol Rating Value Unit
T
A
Operating Ambient Temperature −40 to 125 °C
T
J
Maximum Junction Temperature 150 °C
T
STG
Storage Temperature Range −65 to 150 °C
P
D
Total Power Dissipation (Note 4) SOT−23
Derating above 25°C
225
1.8
mW
mW/°C
P
D
Total Power Dissipation (Note 4) SC−74
Derating above 25°C
380
3.0
mW
mW/°C
R
q
JA
Thermal Resistance, Junction–to–Ambient
Minimum Copper SOT−23
SC−74 One Device Powered
SC−74 Both Devices Equally Powered
300 mm
2
Copper SOT−23
SC−74 One Device Powered
SC−74 Both Devices Equally Powered
556
556
398
395
420
270
°C/W
1. Nonrepetitive current square pulse 1.0 ms duration.
2. For different square pulse durations, see Figure 12.
3. Nonrepetitive load dump pulse per Figure 3.
4. Mounted onto minimum pad board.
P1-P3P4-P6P7-P9P10-P10

NUD3160DMT1G

Mfr. #:
Buy NUD3160DMT1G
Manufacturer:
ON Semiconductor
Description:
Gate Drivers 61V Industrial Load Driver
Lifecycle:
New from this manufacturer.
Delivery:
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