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NUD3160DMT1

P1-P3P4-P6P7-P9P10-P10
NUD3160, SZNUD3160
www.onsemi.com
4
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise specified)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain to Source Sustaining Voltage
(I
D
= 10 mA)
V
BRDSS
61 66 70 V
Drain to Source Leakage Current
(V
DS
= 12 V, V
GS
= 0 V)
(V
DS
= 12 V, V
GS
= 0 V, T
J
= 125°C)
(V
DS
= 60 V, V
GS
= 0 V)
(V
DS
= 60 V, V
GS
= 0 V, T
J
= 125°C)
I
DSS
−
−
−
−
−
−
−
−
0.5
1.0
50
80
mA
Gate Body Leakage Current
(V
GS
= 3.0 V, V
DS
= 0 V)
(V
GS
= 3.0 V, V
DS
= 0 V, T
J
= 125°C)
(V
GS
= 5.0 V, V
DS
= 0 V)
(V
GS
= 5.0 V, V
DS
= 0 V, T
J
= 125°C)
I
GSS
−
−
−
−
−
−
−
−
60
80
90
110
mA
ON CHARACTERISTICS
Gate Threshold Voltage
(V
GS
= V
DS
, I
D
= 1.0 mA)
(V
GS
= V
DS
, I
D
= 1.0 mA, T
J
= 125°C)
V
GS(th)
1.3
1.3
1.8
−
2.0
2.0
V
Drain to Source On−Resistance
(I
D
= 150 mA, V
GS
= 3.0 V)
(I
D
= 150 mA, V
GS
= 3.0 V, T
J
= 125°C)
(I
D
= 150 mA, V
GS
= 5.0 V)
(I
D
= 150 mA, V
GS
= 5.0 V, T
J
= 125°C)
R
DS(on)
−
−
−
−
−
−
−
−
2.4
3.7
1.8
2.9
W
Output Continuous Current
(V
DS
= 0.3 V, V
GS
= 5.0 V)
(V
DS
= 0.3 V, V
GS
= 5.0 V, T
J
= 125°C)
I
DS(on)
150
100
200
−
−
−
mA
Forward Transconductance
(V
DS
= 12 V, I
D
= 150 mA)
g
FS
− 400 − mmho
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
DS
= 12 V, V
GS
= 0 V, f = 10 kHz)
C
iss
− 30 − pf
Output Capacitance
(V
DS
= 12 V, V
GS
= 0 V, f = 10 kHz)
C
oss
− 14 − pf
Transfer Capacitance
(V
DS
= 12 V, V
GS
= 0 V, f = 10 kHz)
C
rss
− 6.0 − pf
SWITCHING CHARACTERISTICS
Propagation Delay Times:
High to Low Propagation Delay; Figure 2, (V
DS
= 12 V, V
GS
= 3.0 V)
Low to High Propagation Delay; Figure 2, (V
DS
= 12 V, V
GS
= 3.0 V)
High to Low Propagation Delay; Figure 2, (V
DS
= 12 V, V
GS
= 5.0 V)
Low to High Propagation Delay; Figure 2, (V
DS
= 12 V, V
GS
= 5.0 V)
t
PHL
t
PLH
t
PHL
t
PLH
−
−
−
−
918
798
331
1160
−
−
−
−
ns
Transition Times:
Fall Time; Figure 2, (V
DS
= 12 V, V
GS
= 3.0 V)
Rise Time; Figure 2, (V
DS
= 12 V, V
GS
= 3.0 V)
Fall Time; Figure 2, (V
DS
= 12 V, V
GS
= 5.0 V)
Rise Time; Figure 2, (V
DS
= 12 V, V
GS
= 5.0 V)
t
f
t
r
t
f
t
r
−
−
−
−
2290
618
622
600
−
−
−
−
ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
NUD3160, SZNUD3160
www.onsemi.com
5
TYPICAL WAVEFORMS
(T
J
= 25°C unless otherwise specified)
Figure 2. Switching Waveforms
Load Dump Pulse Not Suppressed:
V
r
= 13.5 V Nominal ±10%
V
S
= 60 V Nominal ±10%
T = 300 ms Nominal ±10%
t
r
= 1 − 10 ms ±10%
Figure 3. Load Dump Waveform Definition
V
S
t
r
90%
10%
T
V
r
, I
r
10% of Peak;
Reference = V
r
, I
r
V
out
V
in
0 V
V
OH
V
IH
t
r
t
f
t
PLH
t
PHL
50%
90%
50%
10%
V
OL
NUD3160, SZNUD3160
www.onsemi.com
6
TYPICAL PERFORMANCE CURVES
(T
J
= 25°C unless otherwise specified)
Figure 4. Drain−to−Source Leakage vs.
Junction Temperature
Figure 5. Gate−to−Source Leakage vs.
Junction Temperature
Figure 6. Breakdown Voltage vs.
Junction Temperature
T
J
, JUNCTION TEMPERATURE (°C) T
J
, JUNCTION TEMPERATURE (°C)
7550250−25−50
0
10
20
30
40
50
80
10050250−25−50
20
30
40
50
60
70
80
Figure 7. Output Characteristics
T
J
, JUNCTION TEMPERATURE (°C)
125500−25−50
65.0
65.2
65.4
65.8
66.0
66.4
I
DSS
, DRAIN LEAKAGE (mA)
125100 75 125
I
GSS
GATE LEAKAGE (mA)
V
GS
= 5 V
V
GS
= 3 V
25 10075
65.6
64.8
BV
DSS
BREAKDOWN VOLTAGE (V)
I
D
= 10 mA
Figure 8. Transfer Function
V
DS
= 60 V
Figure 9. On Resistance Variation vs
Junction Temperature
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
0.70.50.40.30.20.0
1E−03
1E−02
1E−01
1E+00
1E+01
1E+03
0.1 0.6 0.8
I
D
DRAIN CURRENT (mA)
V
GS
= 5 V
V
GS
= 3 V
60
V
GS
= 2 V
V
GS
= 2.5 V
V
GS
= 1.5 V
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
2.62.01.81.61.41.0
1E−07
1E−05
1E−06
1E−04
0.1
1
1.2 2.4
I
D
DRAIN CURRENT (mA)
125 °C
2.2
0.001
0.01
85 °C 25 °C −40 °C
V
DS
= 0.8 V
T
J
, JUNCTION TEMPERATURE (°C)
7550250−25−50
800
1200
1600
2000
2400
2800
R
DS(ON)
, DRAIN−TO−SOURCE RESISTANCE (mW)
125100
I
D
= 0.15 A
3200
V
GS
= 5.0 V
V
GS
= 3.0 V
70
66.2
1E+02
P1-P3P4-P6P7-P9P10-P10

NUD3160DMT1

Mfr. #:
Buy NUD3160DMT1
Manufacturer:
ON Semiconductor
Description:
IC INDCT LOAD DRVR INDUST SC74-6
Lifecycle:
New from this manufacturer.
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