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SP8M7FU6TB

P1-P3P4-P6
SP8M7
Transistors
1/5
Switching
SP8M7
zFeatures
1) Low on-resistance.
2) Built-in G-S Protection Diode.
3) Small and Surface Mount Package (SOP8).
zApplication
Power switching, DC / DC converter.
zExternal dimensions (Unit : mm)
SOP8
Each lead has same dimensions
5.0±0.2
0.2±0.1
6.0±0.3
3.9±0.15
0.5±0.1
(
1
)
(
4
)
(
8
)
(
5
)
Max.1.75
1.27
0.15
0.4±0.1
1.5±0.1
0.1
zAbsolute maximum ratings (Ta=25°C)
Parameter
VV
DSS
Symbol
VV
GSS
AI
D
AI
DP
AI
S
AI
SP
WP
D
°CTch
°CTstg
Nchannel Pchannel
Limits
Unit
Drain-source voltage
Gate-source voltage
Drain current
Total power dissipation (T
C
=25°C)
Channel temperature
Storage temperature
Continuous
Pulsed
Continuous
Source current
(Body diode)
Pulsed
2
150
−55 to +150
2
150
−55 to +150
∗1 Pw≤10µs, Duty cycle≤1%
∗2 MOUNTED ON A CERAMIC BOARD.
∗1
∗1
∗2
30
±20
−30
±20
±7.0
±28
−1.6
−28
±5.0
±20
1.6
6.4
zEquivalent circuit
∗A protection diode is included between the gate and
the source terminals to protect the diode against static
electricity when the product is in use. Use the protection
circuit when the fixed voltages are exceeded.
(1) Tr1 (Nch) Source
(2) Tr1 (Nch) Gate
(3) Tr2 (Pch) Source
(4) Tr2 (Pch) Gate
(5) Tr2 (Pch) Drain
(6) Tr2 (Pch) Drain
(7) Tr1 (Nch) Drain
(8) Tr1 (Nch) Drain
(1) (2) (3) (4)
(8) (7) (6) (5)
∗2
∗1
(8) (7)
(1) (2)
∗2
∗1
(6) (5)
(3) (4)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
zThermal resistance (Ta=25°C)
°C / W
Rth (ch-A) 62.5
Parameter Symbol Limits Unit
Channel to ambient
∗
∗MOUNTED ON A CERAMIC BOARD.
SP8M7
Transistors
2/5
N-ch
zElectrical characteristics (Ta=25°C)
Parameter Symbol
I
GSS
Y
fs
Min.
−
Typ. Max.
Unit
Conditions
V
(BR) DSS
I
DSS
V
GS (th)
R
DS (on)
C
iss
C
oss
C
rss
t
d (on)
t
r
t
d (off)
t
f
Q
g
Q
gs
Q
gd
∗
∗
∗
∗
∗
∗
∗
∗
∗
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
∗Pulsed
−±10 µAV
GS
=±20V, V
DS
=0V
V
DD
15V
30 −−VI
D
=1mA, V
GS
=0V
−−1 µAV
DS
=30V, V
GS
=0V
1.0 − 2.5 V V
DS
=10V, I
D
=1mA
−
− mΩ
−
−−S
−−pF V
DS
=10V
−−pF V
GS
=0V
−−pF f=1MHz
V
GS
=10V
R
GS
=10Ω
−−ns
−−ns
−−ns
−−ns
− nC
−−nC V
GS
=5V
−−nC
36 51 I
D
=5.0A, V
GS
=10V
52 73 I
D
=5.0A, V
GS
=4.5V
58 82 I
D
=5.0A, V
GS
=4V
3.0 I
D
=5.0A, V
DS
=10V
230
80
50
6
R
L
=6.00Ω
8
22
5
3.9
1.1
5.5
1.4 I
D
=5.0A
I
D
=2.5A, V
DD
15V
zBody diode characteristics (Source-Drain Characteristics) (Ta=25°C)
V
SD
−−1.2 V I
S
=6.4A, V
GS
=0V
Parameter Symbol
Min. Typ. Max.
Unit
Conditions
∗
Forward voltage
∗Pulsed
SP8M7
Transistors
3/5
P-ch
zElectrical characteristics (Ta=25°C)
Parameter Symbol
I
GSS
Y
fs
Min.
−
Typ. Max.
Unit
Conditions
V
(BR) DSS
I
DSS
V
GS (th)
R
DS (on)
C
iss
C
oss
C
rss
t
d (on)
t
r
t
d (off)
t
f
Q
g
Q
gs
Q
gd
∗
∗
∗
∗
∗
∗
∗
∗
∗
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
∗Pulsed
−±10 µA
−30 −−V
−−−1 µA
−1.0 −−2.5 V
− 20 28
− 25 35 mΩ
− 30 42
6.0 −−S
− 2600 − pF
− 450
350
− pF
−
20
− pF
−
50
− ns
−
110
− ns
−
70
− ns
−
25
− ns
−
5.5
− nC
−
10
− nC
−−nC
V
GS
= ±20V, V
DS
=0V
V
DD
−15V
I
D
= −1mA, V
GS
=0V
V
DS
= −30V, V
GS
=0V
V
DS
= −10V, I
D
= −1mA
I
D
= −7.0A, V
GS
= −10V
I
D
= −7.0A, V
GS
= −4.5V
I
D
= −7.0A, V
GS
= −4.0V
I
D
= −7.0A, V
DS
= −10V
V
DS
= −10V
V
GS
=0V
f=1MHz
V
GS
= −10V
R
L
=4.3Ω
R
GS
=10Ω
V
GS
= −5V
I
D
= −7.0A
I
D
= −3.5A, V
DD
−15V
zBody diode characteristics (Source-Drain Characteristics) (Ta=25°C)
V
SD
−−−1.2 V I
S
=−1.6A, V
GS
=0V
Parameter Symbol
Min. Typ. Max.
Unit
Conditions
∗
Forward voltage
∗Pulsed
P1-P3P4-P6

SP8M7FU6TB

Mfr. #:
Buy SP8M7FU6TB
Manufacturer:
ROHM Semiconductor
Description:
MOSFET INVERTER SWITCHING MOSFET; SOP8; Nch & Pch - 4V
Lifecycle:
New from this manufacturer.
Delivery:
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