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STD37P3H6AG

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16
Electrical characteristics
STD37P3H6AG
4/16
DocID027952 Rev 1
2 Electrical characteristics
(T
CASE
= 25 °C unless otherwise specified)
Table 4: Static
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source breakdown
voltage
V
GS
= 0 V, I
D
= -250 mA -30
V
I
DSS
Zero gate voltage drain
current
V
GS
= 0 V, V
DS
= -30 V
-1
µA
V
GS
= 0 V, V
DS
= -30 V,
T
CASE
= 125 °C
-10
I
GSS
Gate-body leakage
current
V
DS
= 0 V, V
GS
= -20 V
-100 nA
V
GS(th)
Gate threshold voltage V
DS
= V
GS
, I
D
= 250 µA -2
-4 V
R
DS(on)
Static drain-source on-
resistance
V
GS
= -10 V, I
D
= -25 A
11 15 mΩ
Table 5: Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
C
iss
Input capacitance
V
DS
= -25 V, f = 1 MHz,
V
GS
= 0 V
- 1630 -
pF
C
oss
Output capacitance - 376 -
C
rss
Reverse transfer
capacitance
- 230 -
Q
g
Total gate charge
V
DD
= -15 V, I
D
= -40 A, V
GS
= -
10 V (see Figure 14: "Gate
charge test circuit")
- 30.6 -
nC
Q
gs
Gate-source charge - 9.7 -
Q
gd
Gate-drain charge - 10 -
Table 6: Switching times
Symbol Parameter Test conditions Min. Typ. Max. Unit
t
d(on)
Turn-on delay time
V
DD
= -15 V, I
D
= -20 A
R
G
= 4.7 Ω, V
GS
= -10 V (see
Figure 13: "Switching times
test circuit for resistive load")
- 13.4 -
ns
t
r
Rise time - 15.8 -
t
d(off)
Turn-off delay time - 23.6 -
t
f
Fall time - 9.4 -
Electrical characteristics
DocID027952 Rev 1
5/16
Table 7: Source-drain diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
SD
Source-drain current
-
-49 A
I
SDM
(1)
Source-drain current
(pulsed)
-
-196 A
V
SD
(2)
Forward on voltage V
GS
= 0 V, I
SD
= -40 A -
-1.3 V
t
rr
Reverse recovery time I
SD
= -40 A, di/dt = 100 A/µs,
V
DD
= -24 V (see Figure 15:
"Test circuit for inductive load
switching and diode recovery
times")
- 25.3
ns
Q
rr
Reverse recovery charge - 19.2
nC
I
RRM
Reverse recovery current - -1.5
A
Notes:
(1)
Pulse width is limited by safe operating area.
(2)
Pulse test: pulse duration = 300 µs, duty cycle 1.5%.
Electrical characteristics
STD37P3H6AG
6/16
DocID027952 Rev 1
2.1 Electrical characteristics (curves)
For the P-channel Power MOSFET, current and voltage polarities are reversed
Figure 2: Safe operating area
Figure 3: Thermal impedance
Figure 4: Output characteristics
Figure 5: Transfer characteristics
Figure 6: Gate charge vs gate-source voltage
Figure 7: Static drain-source on-resistance
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16

STD37P3H6AG

Mfr. #:
Buy STD37P3H6AG
Manufacturer:
STMicroelectronics
Description:
MOSFET Automotive-grade P-channel -30 V, 11 mOhm typ., -49 A STripFET H6 Power MOSFET in a DPAK package
Lifecycle:
New from this manufacturer.
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